1C5711
1C5711AG
TECHNICAL DATA
DATA SHEET D0043 REV. B
SILICON SCHOTTKY RECTIFIER DIE
Applications:
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
Features:
Ultra low Reverse Leakage Current
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Maximum Ratings:
Characteristics
Working Peak Reverse
Voltage
Non-repetitive Peak Reverse
Voltage
Average Forward Current
Junction Temperature
Storage Temperature
Symbol
Condition
Min.
Max.
Units
VRWM
IR = 1 A, TJ = 25 C
50
-
V
VRSM
IR = 10 A, TJ = 25 C
70
-
V
-
1
mA
-55
-55
125
150
C
C
IF(AV)
TJ
Tstg
50% duty cycle,
rectangular wave form
-
Electrical Characteristics:
Characteristics
Forward Voltage Drop
Symbol
VF1
Reverse Current
IR1
Junction Capacitance
CT
Condition
@ 1mA, Pulse, TJ = 25 C
@ 15mA, Pulse, TJ = 25 C
@VR = 50V, Pulse,
TJ = 25 C
@VR = 0V, TC = 25 C
fSIG = 1MHz,
VSIG = 50mV (p-p)
Max.
0.41
1.00
200
Units
2
pF
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
V
nA
1C5711
1C5711AG
TECHNICAL DATA
DATA SHEET D0043 REV. B
Mechanical Dimensions: In mil
1C5711
Bottom side metalization Cr/Ag/Au-5.2kÅ nominal
ANODE
B
A
Top side metalization Ti/Ni/Au-15kÅ nominal
Bottom side is cathode, top side is anode
1C5711AG
A
Bottom side metalization Ti/Ni/Au-4kÅ minimum
ANODE
Top side metalization Ti/Al-25kÅ minimum
C
Bottom side is cathode, top side is anode
CATHODE
Chip
A
B
C
1C5711
15.0 ± 2.0
5.0 ± 1.0
11.0 ± 2.0
1C5711AG
15.0 ± 2.0
5.0 ± 1.0
10.0 ± 2.0
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
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