BYW29EX-200,127

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn Semiconductors Co., Ltd. {year}. All rights reserved” If you have any questions related to this document, please contact our nearest sales office via email or phone (details via salesaddresses@ween-semi.com). Thank you for your cooperation and understanding, WeEn Semiconductors DISCRETE SEMICONDUCTORS DATA SHEET BYW29EX series Rectifier diodes ultrafast, rugged Product specification October 1998 NXP Semiconductors Product specification Rectifier diodes ultrafast, rugged GENERAL DESCRIPTION BYW29EX series QUICK REFERENCE DATA Glass passivated epitaxial rectifier diodes in a full pack plastic envelope, featuring low forward voltage drop, ultra-fast recovery times, soft recovery characteristic and guaranteed reverse surge and ESD capability. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. PINNING - SOD113 PIN SYMBOL PARAMETER BYW29EXRepetitive peak reverse voltage Forward voltage Forward current Reverse recovery time Repetitive peak reverse current VRRM VF IF(AV) trr IRRM PIN CONFIGURATION MAX. MAX. UNIT 150 150 200 200 V 0.895 8 25 0.2 0.895 8 25 0.2 V A ns A SYMBOL DESCRIPTION case 1 cathode 2 anode k 1 case isolated 1 a 2 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage IF(AV) Average forward current1 IF(RMS) IFRM RMS forward current Repetitive peak forward current t = 25 µs; δ = 0.5; Ths ≤ 106 ˚C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal; with reapplied VRWM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 µs; δ = 0.001 Non-repetitive peak reverse tp = 100 µs current Storage temperature Operating junction temperature IFSM I2t IRRM IRSM Tstg Tj CONDITIONS MIN. - square wave; δ = 0.5; Ths ≤ 106 ˚C sinusoidal; a = 1.57; Ths ≤ 109 ˚C MAX. -150 150 150 150 UNIT -200 200 200 200 V V V - 8 A - 7.3 11.3 16 A A A - 80 88 A A - 32 0.2 0.2 A2s A A -40 - 150 150 ˚C ˚C 1 Neglecting switching and reverse current losses October 1998 1 Rev 1.200 NXP Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29EX series ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model; C = 250 pF; R = 1.5 kΩ MIN. MAX. UNIT - 8 kV ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol R.M.S. isolation voltage from both terminals to external heatsink f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from both terminals f = 1 MHz to external heatsink MIN. TYP. - MAX. UNIT 2500 V - 10 - pF MIN. TYP. MAX. UNIT - 55 5.5 7.2 - K/W K/W K/W MIN. TYP. MAX. UNIT - 0.80 0.92 1.1 0.2 2 0.895 1.05 1.3 0.6 10 V V V mA µA MIN. TYP. MAX. UNIT - 4 20 11 25 nC ns - 15 1 20 - ns V THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Thermal resistance junction to ambient with heatsink compound without heatsink compound in free air Rth j-a STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current IF = 8 A; Tj = 150˚C IF = 8 A IF = 20 A VR = VRWM; Tj = 100 ˚C VR = VRWM DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS Qs trr1 Reverse recovery charge Reverse recovery time trr2 Vfr Reverse recovery time Forward recovery voltage IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; dIF/dt = 10 A/µs October 1998 2 Rev 1.200 NXP Semiconductors Product specification Rectifier diodes ultrafast, rugged I dI F BYW29EX series 0.5A F dt IF t 0A rr time Q I 10% s I rec = 0.25A IR 100% trr2 I R rrm I = 1A R Fig.1. Definition of trr1, Qs and Irrm I Fig.4. Definition of trr2 12 F Ths(max) / C BYW29 PF / W Vo = 0.791 V 84 D = 1.0 Rs = 0.013 ohms 95 10 0.5 8 time 106 0.2 6 117 0.1 VF 4 tp I V D= 139 2 fr t T VF 0 time Fig.2. Definition of Vfr 0 2 4 6 IF(AV) / A 8 8 PF / W Ths(max) / C BYW29 a = 1.57 Vo = 0.791 V Rs = 0.013 Ohms 7 122.5 4 4 to ’scope 117 2.8 5 Voltage Pulse Source 106 111.5 1.9 2.2 6 D.U.T. 128 3 133.5 2 139 1 144.5 0 0 1 2 3 4 IF(AV) / A 5 6 7 150 8 Fig.6. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Fig.3. Circuit schematic for trr2 October 1998 150 12 10 Fig.5. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D. R Current shunt 128 tp T 3 Rev 1.200 NXP Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29EX series trr / ns 100 Qs / nC 1000 IF=10A 5A 2A 1A IF=10A 100 10 IF=1A 10 1 1.0 1 10 dIF/dt (A/us) 100 1.0 Fig.7. Maximum trr at Tj = 25 ˚C. 100 Fig.10. Maximum Qs at Tj = 25 ˚C. Irrm / A 10 10 -dIF/dt (A/us) 10 IF=10A Transient thermal impedance, Zth j-hs (K/W) 1 1 IF=1A 0.1 0.1 PD 0.01 0.001 1us 0.01 10 -dIF/dt (A/us) 1 100 Fig.8. Maximum Irrm at Tj = 25 ˚C. 30 tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) BYW29F/EX Fig.11. Transient thermal impedance; Zth j-hs = f(tp). BYW29 IF / A Tj=150 C Tj=25 C 20 typ max 10 0 0 0.5 1 VF / V 1.5 2 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj October 1998 4 Rev 1.200 NXP Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29EX series MECHANICAL DATA Dimensions in mm 10.3 max 4.6 max Net Mass: 2 g 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 19 max. max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 Fig.12. SOD113; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1998 5 Rev 1.200 NXP Semiconductors Legal information DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 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Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors Legal information NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). 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