SIT5021AC-2BE-33N-192.000000Y

SiT5021 1-220 MHz High Performance Differential (VC) TCXO The Smart Timing Choice The Smart Timing Choice Features Applications  Any frequency between 1 MHz and 220 MHz accurate to 6 decimal places  LVPECL and LVDS output signaling types  0.6ps RMS phase jitter (random) over 12 kHz to 20 MHz bandwidth  Frequency stability as low as ±5 ppm. Contact SiTime for tighter stability options  Industrial and extended commercial temperature ranges  Industry-standard packages: 3.2 x 2.5, 5.0 x 3.2 and 7.0 x 5.0 mm  For frequencies higher than 220 MHz, refer to SiT5022 datasheet  SATA, SAS, 10GB Ethernet, Fibre Channel, PCI-Express  Networking, broadband, instrumentation Electrical Characteristics Parameter and Conditions Symbol Min. Typ. Max. Unit Condition LVPECL and LVDS, Common Electrical Characteristics Supply Voltage Output Frequency Range Initial Tolerance Stability Over Temperature Vdd 2.97 3.3 3.63 2.25 2.5 2.75 V V 2.25 – 3.63 V f 1 – 220 MHz F_init -2 – 2 ppm At 25°C after two reflows -5 – +5 ppm Over operating temperature range at rated nominal power supply voltage and load. F_stab Termination schemes in Figures 1 and 2 - XX ordering code Contact SiTime for tighter stability options. Supply Voltage F_vdd – 50 – ppb ±10% Vdd Output Load F_load – 0.1 – ppm 15 pF ±10% of load First Year Aging F_aging1 -2.5 – +2.5 ppm 25°C 10-year Aging F_aging10 -5 – +5 ppm 25°C T_use -40 – +85 °C Industrial -20 – +70 °C Extended Commercial Operating Temperature Range Pull Range PR ±12.5, ±25, ±50 ppm Upper Control Voltage VC_U Vdd-0.1 – – V Control Voltage Range VC_L – – 0.1 V Control Voltage Input Impedance Z_vc 100 – – k 8 kHz Frequency Change Polarity Control Voltage -3dB Bandwidth – Positive slope All Vdds. Voltage at which maximum deviation is guaranteed. – V_BW – – Input Voltage High VIH 70% – – Vdd Input Voltage Low VIL – – 30% Vdd Pin 1, OE or ST Input Pull-up Impedance Z_in – 100 250 kΩ Pin 1, OE logic high or logic low, or ST logic high Pin 1, ST logic low Pin 1, OE or ST 2 – – MΩ Start-up Time T_start – 6 10 ms Measured from the time Vdd reaches its rated minimum value. Resume Time T_resume – 6 10 ms In Standby mode, measured from the time ST pin crosses DC 45 – 55 % Contact SiTime for tighter duty cycle Duty Cycle LVPECL, DC and AC Characteristics Current Consumption Idd – 61 69 mA Excluding Load Termination Current, Vdd = 3.3V or 2.5V OE Disable Supply Current I_OE – – 35 mA OE = Low Output Disable Leakage Current I_leak – – 1 A OE = Low Standby Current I_std – – 100 A ST = Low, for all Vdds I_driver – – 30 mA Maximum average current drawn from OUT+ or OUT- Output High Voltage VOH Vdd-1.1 – Vdd-0.7 V See Figure 1(a) Output Low Voltage VOL Vdd-1.9 – Vdd-1.5 V See Figure 1(a) V_Swing 1.2 1.6 2.0 V See Figure 1(b) Rise/Fall Time Tr, Tf – 300 500 ps 20% to 80%, see Figure 1(a) OE Enable/Disable Time T_oe – – 115 ns f = 212.5 MHz - For other frequencies, T_oe = 100ns + 3 period RMS Period Jitter T_jitt Maximum Output Current Output Differential Voltage Swing RMS Phase Jitter (random) SiTime Corporation Rev. 1.5 T_phj – 1.2 1.7 ps f = 100 MHz, VDD = 3.3V or 2.5V – 1.2 1.7 ps f = 156.25 MHz, VDD = 3.3V or 2.5V – 1.2 1.7 ps f = 212.5 MHz, VDD = 3.3V or 2.5V – 0.6 0.85 ps f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all Vdds 990 Almanor Avenue, Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Revised November 12, 2015 SiT5021 1-220 MHz High Performance Differential (VC) TCXO The Smart Timing Choice The Smart Timing Choice Electrical Characteristics (continued) Parameter and Conditions Symbol Min. Typ. Max. Unit Condition LVDS, DC and AC Characteristics Current Consumption Idd – 47 55 mA OE Disable Supply Current I_OE – – 35 mA Excluding Load Termination Current, Vdd = 3.3V or 2.5V OE = Low Differential Output Voltage VOD 250 350 450 mV See Figure 2 Output Disable Leakage Current I_leak – – 1 A OE = Low Standby Current I_std – – 100 A ST = Low, for all Vdds See Figure 2 VOD – – 50 mV VOS 1.125 1.2 1.375 V See Figure 2 VOS Magnitude Change VOS – – 50 mV See Figure 2 Rise/Fall Time Tr, Tf – 495 600 ps 20% to 80%, see Figure 2 OE Enable/Disable Time T_oe – – 115 ns f = 212.5 MHz - For other frequencies, T_oe = 100ns + 3 period RMS Period Jitter T_jitt VOD Magnitude Change Offset Voltage RMS Phase Jitter (random) T_phj – 1.2 1.7 ps f = 100 MHz, VDD = 3.3V or 2.5V – 1.2 1.7 ps f = 156.25 MHz, VDD = 3.3V or 2.5V – 1.2 1.7 ps f = 212.5 MHz, VDD = 3.3V or 2.5V – 0.6 0.85 ps f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all Vdds Pin Description Pin Map Functionality V Control VC/OE/ST 1 Output Enable Voltage control Top View H or Open: specified frequency output L: output is high impedance H or Open: specified frequency output L: Device goes to sleep mode. Supply current reduces to I_std. Standby 2 NC NA 3 GND Power 4 OUT+ Output Oscillator output 5 OUT- Output Complementary oscillator output 6 VDD Power Power supply voltage VC/OE/ST 1 6 VDD NC 2 5 OUT- GND 3 4 OUT+ No Connect; Leave it floating or connect to GND for better heat dissipation VDD Power Supply Ground Absolute Maximum Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Min. Max. Unit Storage Temperature Parameter -65 150 °C VDD -0.5 4 V Electrostatic Discharge (HBM) – 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) – 260 °C Thermal Consideration JA, 4 Layer Board JC, Bottom 7050, 6-pin 142 27 5032, 6-pin 97 20 3225, 6-pin 109 20 Package (°C/W) (°C/W) Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260°C Rev. 1.5 Page 2 of 8 www.sitime.com SiT5021 1-220 MHz High Performance Differential (VC) TCXO The Smart Timing Choice The Smart Timing Choice Waveform Diagrams OUT80% 80% 20% 20% VOH OUT+ Tr VOL Tf GND Figure 1(a). LVPECL Voltage Levels per Differential Pin (OUT+/OUT-) V _ S w in g 0 V t Figure 1(b). LVPECL Voltage Levels Across Differential Pair OUT80% 80% VOD 20% 20% OUT+ VOS Tr Tf GND Figure 2. LVDS Voltage Levels per Differential Pin (OUT+/OUT-) Rev. 1.5 Page 3 of 8 www.sitime.com SiT5021 1-220 MHz High Performance Differential (VC) TCXO The Smart Timing Choice The Smart Timing Choice Termination Diagrams LVPECL: VDD Z 0 = 50  OUT+ D+ Receiver Device L V P E C L D rive r Z0 = 5 0  OUT- D50  50  V T T = V D D – 2.0 V Figure 3. LVPECL Typical Termination VDD= 3.3V => R1 = 100 to 150  VDD= 2.5V => R1 = 75  VDD OUT+ 100 nF Z0 = 50  D+ Receiver Device LVPECL Driver 100 nF Z0 = 50  OUTR1 R1 D50  50  VTT Figure 4. LVPECL AC Coupled Termination VDD = 3.3V => R1 = R3 = 133  and R2 = R4 = 82  VDD = 2.5V => R1 = R3 = 250  and R2 = R4 = 62.5  VDD R1 VDD OUT+ R3 Z0 = 50  D+ Receiver Device LVPECL Driver OUT- Z0 = 50  DR2 R4 Figure 5. LVPECL with Thevenin Typical Termination Rev. 1.5 Page 4 of 8 www.sitime.com SiT5021 1-220 MHz High Performance Differential (VC) TCXO The Smart Timing Choice The Smart Timing Choice LVDS: VDD OUT+ Z0 = 50  D+ 100  LVDS Driver OUT- Z0 = 50  Receiver Device D- Figure 6. LVDS Single Termination (Load Terminated) Rev. 1.5 Page 5 of 8 www.sitime.com SiT5021 1-220 MHz High Performance Differential (VC) TCXO The Smart Timing Choice The Smart Timing Choice Dimensions and Patterns Package Size – Dimensions (Unit: mm)[1] Recommended Land Pattern (Unit: mm)[2] 3.2 x 2.5x 0.75 mm 3.2±0.05 2.20 #4 #2 #3 #4 #6 0.9 #1 #3 #2 1.00 0.7 YXXXX 2 .2 5 #5 1.6 #5 2.5±0.05 #6 #1 0.6 0.75±0.05 0 .6 5 1 .0 5 5.0 x 3.2 x 0.75 mm #5 #4 #2 #3 #4 #5 #6 1.20 #6 YXXXX #1 #3 #2 #1 0.75±0.05 7.0 x 5.0x 0.90 mm 7.0±0.10 5.08 #2 #5 #3 #3 5.08 #6 1.10 YXXXX #1 #4 #2 3.80 #4 2.60 #5 5.0±0.10 #6 #1 0.90 ±0.10 1.60 1.40 1.60 Notes: 1. Top Marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device. 2. A capacitor of value 0.1 F between Vdd and GND is recommended. Rev. 1.5 Page 6 of 8 www.sitime.com SiT5021 1-220 MHz High Performance Differential (VC) TCXO The Smart Timing Choice The Smart Timing Choice Ordering Information SiT5021AC -1CE-33VQ123.123456T Part Family Packaging: “T” for Tape & Reel (3 Ku Reel) “Y” for Tape & Reel (1 Ku Reel) Blank for Bulk “SiT5021” Revision Letter “A” is the revision of Silicon Temperature Range Frequency 1.000000 MHz to 220.000000 MHz “C” Extended Commercial, -20 to 70°C “I” Industrial, -40 to 85°C Pull Range Options “-” for No Pull “Q” for ±12.5 ppm “M” for ±25 ppm “B” for ±50 ppm Signalling Type “1” = LVPECL “2” = LVDS Feature Pin (pin 1) Package Size “B” 3.2 x 2.5 mm “C” 5.0 x 3.2 mm “D” 7.0 x 5.0 mm “V” for Voltage Control “E” for Output Enable “S” for Standby “N” for No Connect Frequency Stability[3] Supply Voltage “E” for ±5.0 ppm “25” for 2.5V ±10% “33” for 3.3V ±10% “XX” for 2.5 to 3.3V ±10% Note: 3. Contact SiTime for tighter stability options. Ordering Codes for Supported Tape & Reel Packing Method Device Size 12 mm T&R (3ku) 12 mm T&R (1ku) 12 mm T&R (250u) 16 mm T&R (3ku) 16 mm T&R (1ku) 16 mm T&R (250u) 7.0 x 5.0 mm – – – T Y X 5.0 x 3.2 mm T Y X – – – 3.2 x 2.5 mm T Y X – – – Frequencies Not Supported Range 1: From 209.000001 MHz to 210.999999 MHz Rev. 1.5 Page 7 of 8 www.sitime.com SiT5021 1-220 MHz High Performance Differential (VC) TCXO The Smart Timing Choice The Smart Timing Choice Revision History Version Release Date 1.2 8/20/13 Change Summary Original 1.3 12/16/13 Added input specifications, LVPECL/LVDS waveforms, packaging T&R options 1.4 12/11/14 Modified Thermal Consideration values and Pin Configuration table (pin 1) and drawing 1.5 11/12/15 • Revised stability over temperature and first year aging values in the electrical characteristics table • Revised frequency stability and supply voltage options © SiTime Corporation 2015. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress. 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Rev. 1.5 Page 8 of 8 www.sitime.com The Smart Timing Choice The Smart Timing Choice Supplemental Information The Supplemental Information section is not part of the datasheet and is for informational purposes only. SiTime Corporation 990 Almanor Avenue, Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com The Smart Timing Choice The Smart Timing Choice Silicon MEMS Outperforms Quartz SiTime Corporation Silicon MEMS Outperforms Quartz Rev. 1.2 990 Almanor Avenue, Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Revised November 13, 2015 Silicon MEMS Outperforms Quartz The Smart Timing Choice The Smart Timing Choice Best Reliability Best Electro Magnetic Susceptibility (EMS) Silicon is inherently more reliable than quartz. Unlike quartz suppliers, SiTime has in-house MEMS and analog CMOS expertise, which allows SiTime to develop the most reliable products. Figure 1 shows a comparison with quartz technology. SiTime’s oscillators in plastic packages are up to 54 times more immune to external electromagnetic fields than quartz oscillators as shown in Figure 3. Why is SiTime Best in Class: • SiTime’s MEMS resonators are vacuum sealed using an advanced EpiSeal™ process, which eliminates foreign particles and improves long term aging and reliability • World-class MEMS and CMOS design expertise Why is SiTime Best in Class: • Internal differential architecture for best common mode noise rejection • Electrostatically driven MEMS resonator is more immune to EMS SiTime vs Quartz Electro Magnetic Susceptibility (EMS) Reliability (Million Hours) - 30 IDT Epson 1,140 38 28 Average Spurs (dB) - 39 SiTime - 40 - 40 - 42 - 43 - 45 - 50 - 60 SiTime 54X Better - 70 - 73 - 80 - 90 Kyocera Figure 1. Reliability Comparison[1] Epson TXC CW SiLabs SiTime Figure 3. Electro Magnetic Susceptibility (EMS)[3] Best Aging Best Power Supply Noise Rejection Unlike quartz, MEMS oscillators have excellent long term aging performance which is why every new SiTime product specifies 10-year aging. A comparison is shown in Figure 2. SiTime’s MEMS oscillators are more resilient against noise on the power supply. A comparison is shown in Figure 4. • SiTime’s MEMS resonators are vacuum sealed using an advanced EpiSeal process, which eliminates foreign particles and improves long term aging and reliability • Inherently better immunity of electrostatically driven MEMS resonator SiTime MEMS vs. Quartz Aging 10 SiTime MEMS Oscillator Quartz Oscillator 8.0 Aging (±PPM) 8 SiTime 2X Better 6 4 2 0 3.0 3.5 1.5 1-Year 10-Year Figure 2. Aging Comparison[2] Silicon MEMS Outperforms Quartz Rev. 1.2 Why is SiTime Best in Class: • On-chip regulators and internal differential architecture for common mode noise rejection • Best analog CMOS design expertise Additive Integrated Phase Jitter per mVp-p Injected Noise (ps/mv) Why is SiTime Best in Class: Power Supply Noise Rejection SiTIme 5.0 NDK Epson Kyocera 4.0 3.0 2.0 SiTime  SiTime 3X Better 1.0 0.0 10 100 1,000 Power Supply Noise Frequency (kHz) 10,000 Figure 4. Power Supply Noise Rejection[4] www.sitime.com Silicon MEMS Outperforms Quartz The Smart Timing Choice The Smart Timing Choice Best Vibration Robustness Best Shock Robustness High-vibration environments are all around us. All electronics, from handheld devices to enterprise servers and storage systems are subject to vibration. Figure 5 shows a comparison of vibration robustness. SiTime’s oscillators can withstand at least 50,000 g shock. They all maintain their electrical performance in operation during shock events. A comparison with quartz devices is shown in Figure 6. Why is SiTime Best in Class: Why is SiTime Best in Class: • The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz • Center-anchored MEMS resonator is the most robust design • The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz • Center-anchored MEMS resonator is the most robust design Vibration Sensitivity (ppb/g) TXC Epson Connor Winfield Kyocera SiLabs 100.00 10.00 1.00 SiTime Up to 30x Better 0.10 10 100 Vibration Frequency (Hz) Figure 5. Vibration Robustness[5] 1000 Peak Frequency Deviation (PPM) Vibration Sensitivity vs. Frequency SiTime 16 14 Differential XO Shock Robustness - 500 g 14.3 12.6 12 10 8 SiTime Up to 25x Better 6 3.9 4 2.9 2.5 2 0.6 0 Kyocera Epson TXC CW SiLabs SiTime Figure 6. Shock Robustness[6] Notes: 1. Data Source: Reliability documents of named companies. 2. Data source: SiTime and quartz oscillator devices datasheets. 3. Test conditions for Electro Magnetic Susceptibility (EMS): • According to IEC EN61000-4.3 (Electromagnetic compatibility standard) • Field strength: 3V/m • Radiated signal modulation: AM 1 kHz at 80% depth • Carrier frequency scan: 80 MHz – 1 GHz in 1% steps • Antenna polarization: Vertical • DUT position: Center aligned to antenna Devices used in this test: SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz 4. 50 mV pk-pk Sinusoidal voltage. Devices used in this test: SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz 5. Devices used in this test: same as EMS test stated in Note 3. 6. Test conditions for shock test: • MIL-STD-883F Method 2002 • Condition A: half sine wave shock pulse, 500-g, 1ms • Continuous frequency measurement in 100 μs gate time for 10 seconds Devices used in this test: same as EMS test stated in Note 3 7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com. Silicon MEMS Outperforms Quartz Rev. 1.2 www.sitime.com Document Feedback Form The Smart Timing Choice The Smart Timing Choice SiTime values your input in improving our documentation. Click here for our online feedback form or fill out and email the form below to productsupport@sitime.com. 1. Does the Electrical Characteristics table provide complete information? Yes No If No, what parameters are missing? _________________________________________________________________________________________________ 2. Is the organization of this document easy to follow? Yes No If “No,” please suggest improvements that we can make: _________________________________________________________________________________________________ 3. Is there any application specific information that you would like to see in this document? (Check all that apply) EMI Termination recommendations Shock and vibration performance Other If “Other,” please specify: _________________________________________________________________________________________________ 4. Are there any errors in this document? Yes No If “Yes”, please specify (what and where): _________________________________________________________________________________________________ 5. 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