SIT3809AI-D2-33EX-155.520000Y

SiT3809 80 MHz to 220 MHz MEMS VCXO The Smart Timing Choice The Smart Timing Choice Features Applications  Any frequency between 80.000001 MHz and 220 MHz with 6 decimal places of accuracy  Telecom clock synchronization, instrumentation  Low bandwidth analog PLL, jitter cleaner, clock recovery, audio  100% pin-to-pin drop-in replacement to quartz-based VCXO  Video, 3G/HD-SDI, FPGA, broadband and networking  Frequency stability as tight as ±10 ppm  Widest pull range options from ±25 ppm to ±1600 ppm  Industrial or extended commercial temperature range  Superior pull range linearity of ≤1%, 10 times better than quartz  LVCMOS/LVTTL compatible output  Four industry-standard packages: 2.5 mm x 2.0 mm (4-pin), 3.2 mm x 2.5mm (4-pin), 5.0 mm x 3.2 mm (6-pin), 7.0 mm x 5.0 mm (6-pin)  Instant samples with Time Machine II and field programmable oscillators  RoHS and REACH compliant, Pb-free, Halogen-free and Antimony-free Electrical Specifications Table 1. Electrical Characteristics[1, 2, 3] Parameter Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f 80.000001 – 220 MHz Frequency Stability and Aging Frequency Stability Aging Operating Temperature Range F_stab -10 – +10 ppm -25 – +25 ppm Inclusive of Initial tolerance[4] at 25°C, and variation over temperature, rated supply voltage and load. -50 – +50 ppm F_aging -5 – +5 ppm T_use -20 – +70 °C Extended Commercial -40 – +85 °C Industrial 10 years, 25°C Supply Voltage and Current Consumption Supply Voltage Current Consumption Standby Current Vdd Idd I_std 1.71 1.8 1.89 V 2.25 2.5 2.75 V 2.52 2.8 3.08 V 2.97 3.3 3.63 V – 34 36 mA – 30 33 mA No load condition, f = 100 MHz, Vdd = 1.8V – – 70 A Vdd = 2.5V, 2.8V, 3.3V, ST = GND, output is Weakly Pulled Down – 10 A Vdd = 1.8V, ST = GND, output is Weakly Pulled Down – Additional supply voltages between 2.5V and 3.3V can be supported. Contact SiTime for additional information. No load condition, f = 100 MHz, Vdd = 2.5V, 2.8V or 3.3V VCXO Characteristics Pull Range[5, 6] Upper Control Voltage PR VC_U ±25, ±50, ±100, ±150, ±200, ±400, ±800, ±1600 ppm 1.7 – – V Vdd = 1.8V, Voltage at which maximum deviation is guaranteed. 2.4 – – V Vdd = 2.5V, Voltage at which maximum deviation is guaranteed. 2.7 – – V Vdd = 2.8V, Voltage at which maximum deviation is guaranteed. 3.2 – – V Vdd = 3.3V, Voltage at which maximum deviation is guaranteed. Voltage at which minimum deviation is guaranteed. Lower Control Voltage VC_L – – 0.1 V Control Voltage Input Impedance Z_in 100 – – kΩ Control Voltage Input Capacitance C_in – 5 – pF Lin – 0.1 1 % – kHz Linearity Frequency Change Polarity Control Voltage Bandwidth (-3dB) SiTime Corporation Rev. 1.01 – V_BW See the Absolute Pull Range and APR table on page 8 Positive slope – 8 – 990 Almanor Avenue, Sunnyvale, CA 94085 Contact SiTime for 16 kHz and other high bandwidth options (408) 328-4400 www.sitime.com Revised January 8, 2015 SiT3809 80 MHz to 220 MHz MEMS VCXO The Smart Timing Choice The Smart Timing Choice Electrical Specifications (continued) Table 1. Electrical Characteristics[1, 2, 3] Parameter Symbol Min. Typ. Max. Unit Condition LVCMOS Output Characteristics Duty Cycle DC 45 – 55 % f 165 MHz, all Vdds. Refer to Note 11 for definition of Duty Cycle. Vdd = 1.8V, 2.5V, 2.8V or 3.3V, 10% - 90% Vdd level Rise/Fall Time Tr, Tf – 1.5 2 ns Output High Voltage VOH 90% – – Vdd IOH = -7 mA (Vdd = 3.0V or 3.3V) IOH = -4 mA (Vdd = 2.8V or 2.5V) IOH = -2 mA (Vdd = 1.8V) Output Low Voltage VOL – – 10% Vdd IOL = 7 mA (Vdd = 3.0V or 3.3V) IOL = 4 mA (Vdd = 2.8V or 2.5V) IOL = 2 mA (Vdd = 1.8V) Input Pull-up Impedance Z_in – 100 250 kΩ For the OE/ST pin for 6-pin devices Input Capacitance C_in – 5 – pF For the OE/ST pin for 6-pin devices T_start – – 10 ms See Figure 7 for startup resume timing diagram T_oe – – 115 ns f = 80.000001 MHz, all Vdds. For other freq, T_oe = 100 ns + 3 clock periods T_resume – 7 10 ms See Figure 8 for resume timing diagram Input Characteristics Startup and Resume Timing Startup Time OE Enable/Disable Time Resume Time Jitter RMS Period Jitter RMS Phase Jitter (random) T_jitt T_phj – 1.5 2 ps f = 156.25 MHz, Vdd = 2.5V, 2.8V or 3.3V – 2 3 ps f = 156.25 MHz, Vdd = 1.8V – 0.5 1 ps f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz Notes: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. 2. The typical value of any parameter in the Electrical Characteristics table is specified for the nominal value of the highest voltage option for that parameter and at 25°C temperature. 3. All max and min specifications are guaranteed across rated voltage variations and operating temperature ranges, unless specified otherwise 4. Initial tolerance is measured at Vin = Vdd/2 5. Absolute Pull Range (APR) is defined as the guaranteed pull range over temperature and voltage. 6. APR = pull range (PR) - frequency stability (F_stab) - Aging (F_aging) Rev. 1.01 Page 2 of 9 www.sitime.com SiT3809 80 MHz to 220 MHz MEMS VCXO The Smart Timing Choice The Smart Timing Choice Table 2. Pin Description. 4-Pin Configuration (For 2.5 x 2.0 mm and 3.2 x 2.5 mm packages) Top View Pin Symbol 1 VIN Input 2 GND Power 3 CLK Power Power supply voltage VDD Input Power Oscillator output power[7] 4 Functionality 0-Vdd: produces voltage dependent frequency change VIN 1 4 VDD GND 2 3 CLK Electrical ground Note: 7. A capacitor value of 0.1 µF between VDD and GND is recommended. Figure 1. Table 3. Pin Description. 6-Pin Configuration (For 5.0 x 3.2 mm and 7.0 x 5.0 mm packages) Pin Symbol 1 VIN Functionality Input No Connect 2 NC/OE/ ST Top View 0-Vdd: produces voltage dependent frequency change H or L or Open: No effect on output frequency or other device functions Output Enable H or Open[8]: specified frequency output L: output is high Standby H or Open[8]: specified frequency output L: output is low (weak pull down)[9]. Oscillation stops 3 GND Power Electrical ground 4 CLK Output Oscillator output 5 NC No Connect 6 VDD Power VIN 1 6 VDD NC/OE/ST 2 5 NC GND 3 4 CLK H or L or Open: No effect on output frequency or other device functions Figure 2. Power supply voltage[10] Notes: 8. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 2 in the 6-pin package is not externally driven. If pin 2 needs to be left floating, use the NC option 9. Typical value of the weak pull-down impedance is 5 mΩ 10. A capacitor value of 0.1 µF between VDD and GND is recommended. Table 4. Absolute Maximum Limits Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Min. Max. Unit Storage Temperature Parameter -65 150 °C VDD -0.5 4 V Electrostatic Discharge – 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) – 260 °C Table 5. Thermal Consideration JA, 4 Layer Board JA, 2 Layer Board JC, Bottom 7050 191 263 30 5032 97 199 24 3225 109 212 27 2520 117 222 26 Parameter (°C/W) (°C/W) (°C/W) Table 6. Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260°C Rev. 1.01 Page 3 of 9 www.sitime.com SiT3809 80 MHz to 220 MHz MEMS VCXO The Smart Timing Choice The Smart Timing Choice Phase Noise Plot SiT3809, 100MHz, Pull range ±100ppm, 3.3V, LVCMOS output -80 Phase Noise (dBc/Hz) -90 -100 Integrated Random Phase Jitter (RMS, 12kHz - 20MHz): 0.51 ps -110 -120 -130 -140 -150 -160 3 10 4 5 10 6 10 7 10 10 Offset Frequency (Hz) Figure 3. Phase Noise Test Circuit and Waveform Power Supply 0.1µF Vdd Vout 4 3 1 Vout Test Point 15pF (including probe and fixture capacitance) 2 Power Supply OE/ST Function 0.1µF 6 5 4 1 2 3 Test Point 15pF (including probe and fixture capacitance) OE/ST Function Vc Vc Figure 4. Test Circuit (4-Pin Device) Vdd Figure 5. Test Circuit (6-Pin Device) tr tf 90% Vdd 50% 10% Vdd High Pulse (TH) Low Pulse (TL) Period Figure 6. Waveform Notes: 11. Duty Cycle is computed as Duty Cycle = TH/Period. 12. SiT3809 supports the configurable duty cycle feature. For custom duty cycle at any given frequency, contact SiTime. Rev. 1.01 Page 4 of 9 www.sitime.com SiT3809 80 MHz to 220 MHz MEMS VCXO The Smart Timing Choice The Smart Timing Choice Timing Diagram 80% Vdd, 2.5/2.8/3.3V devices 80% Vdd, 1.8V devices Vdd Vdd 50% Vdd Pin 4 Voltage T_start ST Voltage No Glitch during start up T_resume CLK Output CLK Output T_start: Time to start from power-off T_resume: Time to resume from ST Figure 7. Startup Timing (OE/ST Mode) Figure 8. Standby Resume Timing (ST Mode Only) u Vdd Vdd 50% Vdd OE Voltage OE Voltage 50% Vdd T_oe T_oe CLK Output CLK Output HZ T_oe: Time to re-enable the clock output T_oe: Time to put the output in High Z mode Figure 9. OE Enable Timing (OE Mode Only) Figure 10. OE Disable Timing (OE Mode Only) Notes: 13. SiT3809 supports “no runt” pulses and “no glitch” output during startup or resume. 14. SiT3809 supports gated output which is accurate within rated frequency stability from the first cycle. Rev. 1.01 Page 5 of 9 www.sitime.com SiT3809 80 MHz to 220 MHz MEMS VCXO The Smart Timing Choice The Smart Timing Choice Instant Samples with Time Machine and Field Programmable Oscillators SiTime supports a field programmable version of the SiT3809 MEMS VCXO for fast prototyping and real time customization of features. The field programmable devices (FP devices) are available for all four standard SiT3809 package sizes and can be configured to one’s exact specification using the Time Machine II, an USB powered MEMS oscillator programmer. For more information regarding SiTime’s field programmable solutions, visit http://www.sitime.com/time-machine and http://www.sitime.com/fp-devices. SiT3809 is typically factory-programmed per customer ordering codes for volume delivery. Customizable Features of the SiT3809 FP Devices Include • Any frequency between 80.000001 MHz to 220 MHz • Three frequency stability options: ±10 ppm, ±25 ppm, ±50 ppm • Two operating temperatures: -20 to 70°C or -40 to 85°C • Four supply voltage options: 1.8V, 2.5V, 2.8V, and 3.3V • Eight pull range options: ±25 ppm, ±50 ppm, ±100 ppm, ±150 ppm, ±200 ppm, ±400 ppm, ±800 ppm, ±1600 ppm Rev. 1.01 Page 6 of 9 www.sitime.com SiT3809 80 MHz to 220 MHz MEMS VCXO The Smart Timing Choice The Smart Timing Choice Dimensions and Patterns Package Size – Dimensions (Unit: mm)[15] Recommended Land Pattern (Unit: mm) 2.7 x 2.4 x 0.75 mm (100% compatible with 2.5 x 2. 0 mm footprint) 1.9 1.25 1.5 YXXXX 0.50 1.00 2.4 ± 0.05 2.7 ± 0.05 1.0 0.85 0.75 ± 0.05 1.1 3.2 x 2.5 x 0.75 mm 3.2 ± 0.05 #3 1.9 #2 #1 0.9 0.75 ± 0.05 #2 1.2 #1 0.7 YXXXX #4 0.9 #3 2.5 ± 0.05 #4 2.2 2.1 1.4 5.0 x 3.2 x 0.75 mm #5 #4 #2 #3 #4 #5 #6 1.20 #6 YXXXX #1 #3 #2 #1 0.75±0.05 7.0 x 5.0x 0.90 mm 7.0±0.10 #3 #3 #2 3.80 #6 #5 #1 1.60 #2 #4 1.10 YXXXX #1 5.08 5.08 #4 2.60 #5 5.0±0.10 #6 0.90 ±0.10 1.40 1.60 Note: 15.Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device. Rev. 1.01 Page 7 of 9 www.sitime.com SiT3809 80 MHz to 220 MHz MEMS VCXO The Smart Timing Choice The Smart Timing Choice Ordering Information SiT3809AC -22-33EH-125.123456D Packing Method “T”: 12 mm Tape & Reel, 3ku reel “Y”: 12 mm Tape & Reel, 1ku reel “D”: 8 mm Tape & Reel, 3ku reel “E”: 8 mm Tape & Reel, 1ku reel Blank for Bulk Part Family “SiT3809” Revision Letter “A” is the revision Frequency Temperature Range 80.000001 to 220 MHz “C” Commercial, -20 to 70ºC Pull Range Options “M” for ±25 ppm “B” for ±50 ppm “E” for ±100 ppm “G” for ±150 ppm “H” for ±200 ppm “X” for ±400 ppm “Y” for ±800 ppm “Z” for ±1600 ppm “I” Industrial, -40 to 85ºC Output Drive Strength[16] “-” Default below the line Package Feature Pin “N” for No Connect in 6-pin devices, Default value in 4-pin device “G” 2.5 x 2.0 mm x mm “2” 4-pin, 3.2 x 2.5 mm x mm “C” 6-pin, 5.0 x 3.2 mm x mm “E” for Output Enable (6-pin only) “S” for Standby (6-pin only) “D” 6-pin, 7.0 x 5.0 mm x mm Frequency Stability Supply Voltage “F” for ±10 ppm “2” for ±25 ppm “3” for ±50 ppm “18” for 1.8 V ±5% “25” for 2.5 V ±10% “28” for 2.8 V ±10% “33” for 3.3 V ±10% Note: 16. Contact SiTime for different drive strength to drive multiple loads or to reduce EMI. Table 7. APR Definition Absolute pull range (APR) = Norminal pull range (PR) - frequency stability (F_stab) - Aging (F_aging) Frequency Stability Nominal Pull Range ± 10 ± 25 ± 50 APR (PPM) ± 25 ± 10 – ± 50 ± 35 ± 20 – – ± 100 ± 85 ± 70 ± 45 ± 150 ± 135 ± 120 ± 95 ± 200 ± 185 ± 170 ± 145 ± 400 ± 385 ± 370 ± 345 ± 800 ± 785 ± 770 ± 745 ± 1600 ± 1585 ± 1570 ± 1545 Table 8. Ordering Codes for Supported Tape & Reel Packing Method[17] Device Size 12 mm T&R (3ku) 12 mm T&R (1ku) 8 mm T&R (3ku) 8 mm T&R 1ku) 2.5 x 2.0 mm – – D E 3.2 x 2.5 mm – – D E 5.0 x 3.2 mm T Y – – 7.0 x 5.0 mm T Y – – Note: 17. “–” indicates “not available.” Rev. 1.01 Page 8 of 9 www.sitime.com SiT3809 80 MHz to 220 MHz MEMS VCXO The Smart Timing Choice The Smart Timing Choice Table 9. Additional Information Document Description Download Link Manufacturing Notes Tape & Reel dimension, reflow profile and other manufacturing related info http://www.sitime.com/component/docman/doc_download/85-manufaturing-notes-for-sitime-oscillators Qualification Reports RoHS report, reliability reports, composition reports http://www.sitime.com/support/quality-and-reliability Performance Reports Additional performance data such as phase noise, current consumption and jitter for selected frequencies http://www.sitime.com/support/performance-measurement-report Termination Techniques Termination design recommendations http://www.sitime.com/support/application-notes Layout Techniques Layout recommendations http://www.sitime.com/support/application-notes VCXO Specifications Definition of key VCXO specifications such as APR and Kv http://www.sitime.com/support2/documents/AN10020_VCXO_SpecDefinitions_rev1.pdf VCXO in PLL Design Selection of VCXO parameters and trade-offs in PLL designs http://www.sitime.com/support2/documents/AN10021_VCXO_PLL_Design_Guidelines_1v0.pdf Revision History Table 10. Datasheet Version and Change Log Version Release Date 0.6 1/24/2013 Change Summary 1.0 3/18/14 • • • • • • • • • • Preliminary removed from title Updated features and application Updated electrical specifications table Updated figure 4, Added new 6-pin device for figure 5 Updated timing diagrams Updated ordering information drawing Updated APR table Updated ordering codes for tape and reel table Reformatted additional information table columns 1.01 1/8/15 • • Corrected CLK and VDD functionality description in Table 2 Revised VIN functionality description in Table 3 Preliminary © SiTime Corporation 2015. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress. Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below. CRITICAL USE EXCLUSION POLICY BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE. SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited. Rev. 1.01 Page 9 of 9 www.sitime.com The Smart Timing Choice The Smart Timing Choice Supplemental Information The Supplemental Information section is not part of the datasheet and is for informational purposes only. SiTime Corporation 990 Almanor Avenue, Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com The Smart Timing Choice The Smart Timing Choice Silicon MEMS Outperforms Quartz SiTime Corporation Silicon MEMS Outperforms Quartz Rev. 1.1 990 Almanor Avenue, Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Revised October 5, 2013 Silicon MEMS Outperforms Quartz The Smart Timing Choice The Smart Timing Choice Best Reliability Best Electro Magnetic Susceptibility (EMS) Silicon is inherently more reliable than quartz. Unlike quartz suppliers, SiTime has in-house MEMS and analog CMOS expertise, which allows SiTime to develop the most reliable products. Figure 1 shows a comparison with quartz technology. SiTime’s oscillators in plastic packages are up to 54 times more immune to external electromagnetic fields than quartz oscillators as shown in Figure 3. Why is SiTime Best in Class: • SiTime’s MEMS resonators are vacuum sealed using an advanced EpiSeal™ process, which eliminates foreign particles and improves long term aging and reliability • World-class MEMS and CMOS design expertise Why is SiTime Best in Class: • Internal differential architecture for best common mode noise rejection • Electrostatically driven MEMS resonator is more immune to EMS SiTime vs Quartz Electro Magnetic Susceptibility (EMS) Mean Time Between Failure (Million Hours) - 30 - 39 500 IDT (Fox) 38 SiTime 20X Better 28 Epson TXC 16 Pericom 14 Average Spurs (dB) SiTime - 40 - 40 - 42 - 43 - 45 - 50 - 60 SiTime 54X Better - 70 - 73 - 80 - 90 200 0 Kyocera 600 400 Figure 1. Reliability Comparison[1] Epson TXC CW SiLabs SiTime Figure 3. Electro Magnetic Susceptibility (EMS)[3] Best Aging Best Power Supply Noise Rejection Unlike quartz, MEMS oscillators have excellent long term aging performance which is why every new SiTime product specifies 10-year aging. A comparison is shown in Figure 2. SiTime’s MEMS oscillators are more resilient against noise on the power supply. A comparison is shown in Figure 4. • SiTime’s MEMS resonators are vacuum sealed using an advanced EpiSeal process, which eliminates foreign particles and improves long term aging and reliability • Inherently better immunity of electrostatically driven MEMS resonator SiTime MEMS vs. Quartz Aging 10 SiTime MEMS Oscillator Quartz Oscillator 8.0 Aging (±PPM) 8 SiTime 2X Better 6 4 2 0 3.0 3.5 1.5 1-Year 10-Year Figure 2. Aging Comparison[2] Silicon MEMS Outperforms Quartz Rev. 1.1 Why is SiTime Best in Class: • On-chip regulators and internal differential architecture for common mode noise rejection • Best analog CMOS design expertise Additive Integrated Phase Jitter per mVp-p Injected Noise (ps/mv) Why is SiTime Best in Class: Power Supply Noise Rejection SiTIme 5.0 NDK Epson Kyocera 4.0 3.0 2.0 SiTime  SiTime 3X Better 1.0 0.0 10 100 1,000 Power Supply Noise Frequency (kHz) 10,000 Figure 4. Power Supply Noise Rejection[4] www.sitime.com Silicon MEMS Outperforms Quartz The Smart Timing Choice The Smart Timing Choice Best Vibration Robustness Best Shock Robustness High-vibration environments are all around us. All electronics, from handheld devices to enterprise servers and storage systems are subject to vibration. Figure 5 shows a comparison of vibration robustness. SiTime’s oscillators can withstand at least 50,000 g shock. They all maintain their electrical performance in operation during shock events. A comparison with quartz devices is shown in Figure 6. Why is SiTime Best in Class: Why is SiTime Best in Class: • The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz • Center-anchored MEMS resonator is the most robust design • The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz • Center-anchored MEMS resonator is the most robust design Vibration Sensitivity (ppb/g) TXC Epson Connor Winfield Kyocera SiLabs 100.00 10.00 1.00 SiTime Up to 30x Better 0.10 10 100 Vibration Frequency (Hz) Figure 5. Vibration Robustness[5] 1000 Peak Frequency Deviation (PPM) Vibration Sensitivity vs. Frequency SiTime 16 14 Differential XO Shock Robustness - 500 g 14.3 12.6 12 10 8 SiTime Up to 25x Better 6 3.9 4 2.9 2.5 2 0.6 0 Kyocera Epson TXC CW SiLabs SiTime Figure 6. Shock Robustness[6] Notes: 1. Data Source: Reliability documents of named companies. 2. Data source: SiTime and quartz oscillator devices datasheets. 3. Test conditions for Electro Magnetic Susceptibility (EMS): • According to IEC EN61000-4.3 (Electromagnetic compatibility standard) • Field strength: 3V/m • Radiated signal modulation: AM 1 kHz at 80% depth • Carrier frequency scan: 80 MHz – 1 GHz in 1% steps • Antenna polarization: Vertical • DUT position: Center aligned to antenna Devices used in this test: SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz 4. 50 mV pk-pk Sinusoidal voltage. Devices used in this test: SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz 5. Devices used in this test: same as EMS test stated in Note 3. 6. Test conditions for shock test: • MIL-STD-883F Method 2002 • Condition A: half sine wave shock pulse, 500-g, 1ms • Continuous frequency measurement in 100 μs gate time for 10 seconds Devices used in this test: same as EMS test stated in Note 3 7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com. Silicon MEMS Outperforms Quartz Rev. 1.1 www.sitime.com Document Feedback Form The Smart Timing Choice The Smart Timing Choice SiTime values your input in improving our documentation. Click here for our online feedback form or fill out and email the form below to productsupport@sitime.com. 1. Does the Electrical Characteristics table provide complete information? Yes No If No, what parameters are missing? _________________________________________________________________________________________________ 2. Is the organization of this document easy to follow? Yes No If “No,” please suggest improvements that we can make: _________________________________________________________________________________________________ 3. Is there any application specific information that you would like to see in this document? (Check all that apply) EMI Termination recommendations Shock and vibration performance Other If “Other,” please specify: _________________________________________________________________________________________________ 4. Are there any errors in this document? Yes No If “Yes”, please specify (what and where): _________________________________________________________________________________________________ 5. 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