ES3G

ES3A THRU ES3J HD BK 84 SMBG Plastic-Encapsulate Diodes Super Fast Recovery Rectifier Diode Features ●Io 3A SMBG ●VRRM 50V-600V ●High surge current capability ●Glass passivated chip ● Polarity: Color band denotes cathode Applications ● Rectifier Marking ● ES3X X : From A To J Item Symbol Repetitive Peak Reverse Voltage Unit ES3 Test Conditions A B C D F G H J VRRM V 50 100 150 200 300 400 500 600 VRMS V 35 70 105 140 210 280 350 420 Average Forward Current IF(AV) A 60HZ Half-sine wave, Resistance load, TL=100℃ 3.0 Surge(Non-repetitive)Forward Current IFSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 100 TJ ℃ -55~+150 TSTG ℃ -55 ~ +150 H J Maximum RMS Voltage Junction Temperature Storage Temperature Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Unit Peak Forward Voltage VF V IF =3.0A Maximum reverse recovery time trr ns IF=0.5A,IR=1.0A,Irr=0.25A 35 Ta =25℃ 1 Ta =100℃ 50 Peak Reverse Current Thermal Resistance(Typical) IRRM1 IRRM2 μA RθJ-A Test Condition ES3 Symbol VRM=VRRM A B C D F 0.95 1.25 G 1.7 1) Between junction and ambient 47 Between junction and terminal 12 ℃/W RθJ-L 1) Notes: Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.27" x 0.27" (7.0 mm x 7.0 mm)er copper pad areas High Diode Semiconductor 1 Typical Characteristics FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT IFSM(A) IO(A) FIG.1: FORWARD CURRENT DERATING CURVE 3.5 3.0 150 125 TL=75℃ 8.3毫秒正弦半波 8.3ms Single Half Sine Wave 2.5 100 2.0 75 1.5 50 1.0 Resistive or Inductive Load P.C.B. Mounted on 0.2"×0.2" (5.0mm×5.0mm)Copper Pad Areas 0.5 0 0 25 50 25 75 100 125 150 TL(℃) 0 1 10 100 Number of Cycles FIG.4：TYPICAL REVERSE CHARACTERISTICS IR(uA) IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 100 TJ=25℃ Pulse width=300us 1% Duty Cycle 100 10 10 Tj=150℃ Tj=125℃ 1 ES3A-D 1.0 ES3F-G Tj=75 ℃ 0.1 ES3H-J 0.1 Tj=25℃ 0.01 0.001 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 1.8 VF(V) 60 80 100 Voltage(%) FIG.5: Diagram of circuit and Testing wave form of reverse recovery time I D trr IF VR IF RL t 0 IRR IR High Diode Semiconductor 2 SMBG 0.155(3.94) 0.130(3.30) 0.087 (2.20) 0.071 (1.80) 0.180(4.57) 0.160(4.06) 0.012(0.305) 0.006(0.152) 0.096(2.44) 0.084(2.13) 0.060(1.52) 0.030(0.76) 0.008(0.203)MAX. 0.220(5.59) 0.205(5.21) Dimensions in inches and (millimeters) SMBG 4.26 1.8 JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Devices-SMBG G High Diode Semiconductor 4