3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
DATASHEET
1
GD25Q64C
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
Contents
1.
FEATURES ................................................................................................................................................................ 4
2.
GENERAL DESCRIPTION ...................................................................................................................................... 5
3.
MEMORY ORGANIZATION .................................................................................................................................... 7
4.
DEVICE OPERATION .............................................................................................................................................. 8
5.
DATA PROTECTION ................................................................................................................................................ 9
6.
STATUS REGISTER ............................................................................................................................................... 11
7.
COMMANDS DESCRIPTION ............................................................................................................................... 13
7.1.
WRITE ENABLE (WREN) (06H) ......................................................................................................................... 16
7.2.
WRITE DISABLE (WRDI) (04H) ......................................................................................................................... 16
7.3.
WRITE ENABLE FOR VOLATILE STATUS REGISTER (50H) .................................................................................. 17
7.4.
READ STATUS REGISTER (RDSR) (05H OR 35H OR 15H) .................................................................................. 17
7.5.
WRITE STATUS REGISTER (WRSR) (01H OR 31H OR 11H) ................................................................................ 18
7.6.
READ DATA BYTES (READ) (03H) .................................................................................................................... 19
7.7.
READ DATA BYTES AT HIGHER SPEED (FAST READ) (0BH) .............................................................................. 19
7.8.
DUAL OUTPUT FAST READ (3BH) ...................................................................................................................... 20
7.9.
QUAD OUTPUT FAST READ (6BH) ..................................................................................................................... 21
7.10.
DUAL I/O FAST READ (BBH) ............................................................................................................................. 22
7.11.
QUAD I/O FAST READ (EBH) ............................................................................................................................. 23
7.12.
QUAD I/O WORD FAST READ (E7H) .................................................................................................................. 25
7.13.
SET BURST WITH WRAP (77H) ........................................................................................................................... 27
7.14.
PAGE PROGRAM (PP) (02H) ............................................................................................................................... 27
7.15.
QUAD PAGE PROGRAM (32H)............................................................................................................................. 29
7.16.
FAST PAGE PROGRAM (FPP) (F2H) .................................................................................................................... 30
7.17.
SECTOR ERASE (SE) (20H) ................................................................................................................................. 31
7.18.
32KB BLOCK ERASE (BE) (52H) ....................................................................................................................... 31
7.19.
64KB BLOCK ERASE (BE) (D8H) ...................................................................................................................... 32
7.20.
CHIP ERASE (CE) (60/C7H) ............................................................................................................................... 32
7.21.
DEEP POWER-DOWN (DP) (B9H) ....................................................................................................................... 33
7.22.
RELEASE FROM DEEP POWER-DOWN OR HIGH PERFORMANCE MODE AND READ DEVICE ID (RDI) (ABH)...... 33
7.23.
READ MANUFACTURE ID/ DEVICE ID (REMS) (90H)........................................................................................ 34
7.24.
DUAL I/O READ MANUFACTURE ID/ DEVICE ID (92H)...................................................................................... 35
7.25.
QUAD I/O READ MANUFACTURE ID/ DEVICE ID (94H) ..................................................................................... 36
7.26.
READ IDENTIFICATION (RDID) (9FH) ................................................................................................................ 37
7.27.
HIGH PERFORMANCE MODE (HPM) (A3H) ........................................................................................................ 38
7.28.
PROGRAM/ERASE SUSPEND (PES) (75H) ........................................................................................................... 38
7.29.
PROGRAM/ERASE RESUME (PER) (7AH) ........................................................................................................... 39
7.30.
ERASE SECURITY REGISTERS (44H) ................................................................................................................... 39
7.31.
PROGRAM SECURITY REGISTERS (42H).............................................................................................................. 40
7.32.
READ SECURITY REGISTERS (48H)..................................................................................................................... 41
2
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
7.33.
ENABLE RESET (66H) AND RESET (99H) ............................................................................................................ 42
7.34.
READ SERIAL FLASH DISCOVERABLE PARAMETER (5AH) ................................................................................. 42
8.
ELECTRICAL CHARACTERISTICS ................................................................................................................... 47
8.1.
POWER-ON TIMING ....................................................................................................................................... 47
8.2.
INITIAL DELIVERY STATE ........................................................................................................................... 47
8.3.
ABSOLUTE MAXIMUM RATINGS ............................................................................................................... 47
8.4.
CAPACITANCE MEASUREMENT CONDITIONS ....................................................................................... 48
8.5.
DC CHARACTERISTICS................................................................................................................................. 49
8.6.
AC CHARACTERISTICS................................................................................................................................. 50
9.
ORDERING INFORMATION ................................................................................................................................. 53
9.1.
10.
VALID PART NUMBERS ...................................................................................................................................... 54
PACKAGE INFORMATION ............................................................................................................................... 55
10.1.
PACKAGE SOP8 208MIL ................................................................................................................................... 55
10.2.
PACKAGE DIP8 300MIL .................................................................................................................................... 56
10.3.
PACKAGE WSON 8 (6*5MM) ............................................................................................................................. 57
10.4.
PACKAGE TFBGA-24BALL (6*4 BALL ARRAY) ................................................................................................ 58
10.5.
PACKAGE SOP16 300MIL.................................................................................................................................. 59
10.6.
PACKAGE USON8 (4*4MM, 0.45MM THICKNESS) .............................................................................................. 60
11.
REVISION HISTORY .......................................................................................................................................... 61
3
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
1. FEATURES
◆
◆
64M-bit Serial Flash
Program/Erase Speed
-8192K-byte
-Page Program time: 0.6ms typical
-256 bytes per programmable page
-Sector Erase time: 50ms typical
-Block Erase time: 0.15/0.20s typical
◆
Standard, Dual, Quad SPI
-Chip Erase time: 25s typical
-Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#
◆
-Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#
-Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3
Flexible Architecture
-Sector of 4K-byte
-Block of 32/64k-byte
◆
◆
Low Power Consumption
High Speed Clock Frequency
-20mA maximum active current
-120MHz for fast read with 30PF load
-5uA maximum power down current
-Dual I/O Data transfer up to 240Mbits/s
◆
-Quad I/O Data transfer up to 480Mbits/s
-Continuous Read With 8/16/32/64-byte Wrap
Advanced Security Features(1)
-3*1024-Byte Security Registers With OTP Locks
-Discoverable parameters(SFDP) register
◆
◆
Software/Hardware Write Protection
-Write protect all/portion of memory via software
Single Power Supply Voltage
-Full voltage range:2.7~3.6V
-Enable/Disable protection with WP# Pin
-Top or Bottom, Sector or Block selection
◆
◆
Allows XIP(execute in
place)operation(1)
Package Information
-SOP8 (208mil)
-DIP8 (300mil)
◆
Cycling endurance
-WSON8 (6*5mm)
-Minimum 100,000 Program/Erase Cycles
-TFBGA-24(6*4 ball array)
-SOP16 (300mil)
◆
-USON8 (4*4mm)
Data retention
-20-year data retention typical
Note: 1.Please contact GigaDevice for details.
4
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
2. GENERAL DESCRIPTION
The GD25Q64C (64M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and supports the
Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), and I/O3 (HOLD#). The Dual I/O
data is transferred with speed of 240Mbits/s and the Quad I/O & Quad output data is transferred with speed of 480Mbits/s.
Connection Diagram
CS#
1
SO
2
8
VCC
CS#
1
7
HOLD#
SO
2
Top View
8
VCC
7
HOLD#
Top View
WP#
3
6
SCLK
WP# 3
6 SCLK
VSS
4
5
SI
VSS 4
5
8–LEAD SOP/DIP
8–LEAD WSON/USON
Top View
4
NC
VCC
WP# HOLD# NC
VSS
SI
NC
NC
HOLD#
1
16
SCLK
VCC
2
15
SI
NC
3
14
NC
NC
4
13
NC
NC
3
NC
SI
NC
Top View
2
NC
SCLK CS#
SO
NC
NC
1
NC
NC
NC
NC
NC
NC
A
B
C
D
E
F
24-BALL TFBGA
NC
5
12
NC
NC
6
11
NC
CS#
7
10
VSS
SO
8
9
WP#
16-LEAD SOP
Pin Description
Pin Name
I/O
Description
CS#
I
Chip Select Input
SO (IO1)
I/O
Data Output (Data Input Output 1)
WP# (IO2)
I/O
Write Protect Input (Data Input Output 2)
Ground
VSS
SI (IO0)
I/O
Data Input (Data Input Output 0)
SCLK
I
Serial Clock Input
HOLD# (IO3)
I/O
Hold Input (Data Input Output 3)
VCC
Power Supply
Note: CS# must be driven high if chip is not selected. Please don’t leave CS# floating any time after power is on.
5
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
Block Diagram
WP#(IO2)
Write Control
Logic
HOLD#(IO3)
SCLK
CS#
SI(IO0)
SPI
Command &
Control Logic
Write Protect Logic
and Row Decode
Status
Register
High Voltage
Generators
Page Address
Latch/Counter
Flash
Memory
Column Decode And
256-Byte Page Buffer
SO(IO1)
Byte Address
Latch/Counter
6
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
3. MEMORY ORGANIZATION
GD25Q64C
Each device has
Each block has
Each sector has
Each page has
8M
64/32K
4K
256
bytes
32K
256/128
16
-
pages
2048
16/8
-
-
sectors
128/256
-
-
-
blocks
Uniform Block Sector Architecture
GD25Q64C 64K Bytes Block Sector Architecture
Block
127
126
……
……
2
1
0
Sector
Address range
2047
7FF000H
7FFFFFH
……
……
……
2032
7F0000H
7F0FFFH
2031
7EF000H
7EFFFFH
……
……
……
2016
7E0000H
7E0FFFH
……
……
……
……
……
……
……
……
……
……
……
……
……
……
……
……
……
……
47
02F000H
02FFFFH
……
……
……
32
020000H
020FFFH
31
01F000H
01FFFFH
……
……
……
16
010000H
010FFFH
15
00F000H
00FFFFH
……
……
……
0
000000H
000FFFH
7
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
4. DEVICE OPERATION
SPI Mode
Standard SPI
The GD25Q64C features a serial peripheral interface on 4 signals bus: Serial Clock (SCLK), Chip Select (CS#), Serial Data
Input (SI) and Serial Data Output (SO). Both SPI bus mode 0 and 3 are supported. Input data is latched on the rising edge
of SCLK and data shifts out on the falling edge of SCLK.
Dual SPI
The GD25Q64C supports Dual SPI operation when using the “Dual Output Fast Read” (3BH), “Dual I/O Fast Read” (BBH)
and “Read Manufacture ID/ Device ID Dual I/O” (92H) commands. These commands allow data to be transferred to or from
the device at twice the rate of the standard SPI. When using the Dual SPI command the SI and SO pins become bidirectional
I/O pins: IO0 and IO1.
Quad SPI
The GD25Q64C supports Quad SPI operation when using the “Quad Output Fast Read” (6BH), ”Quad I/O Fast Read”(EBH),
“Quad I/O Word Fast Read” (E7H), “Read Manufacture ID/ Device ID Quad I/O” (94H) and “Quad Page Program” (32H)
commands. These commands allow data to be transferred to or from the device at four times the rate of the standard SPI.
When using the Quad SPI command the SI and SO pins become bidirectional I/O pins: IO0 and IO1, and WP# and HOLD#
pins become IO2 and IO3. Quad SPI commands require the non-volatile Quad Enable bit (QE) in Status Register to be set.
Hold
The HOLD# function is only available when QE=0, If QE=1, The HOLD# functions is disabled, the pin acts as dedicated
data I/O pin.
The HOLD# signal goes low to stop any serial communications with the device, but doesn’t stop the operation of write status
register, programming, or erasing in progress.
The operation of HOLD, need CS# keep low, and starts on falling edge of the HOLD# signal, with SCLK signal being low (if
SCLK is not being low, HOLD operation will not start until SCLK being low). The HOLD condition ends on rising edge of
HOLD# signal with SCLK being low (If SCLK is not being low, HOLD operation will not end until SCLK being low).
The SO is high impedance, both SI and SCLK don’t care during the HOLD operation, if CS# drives high during HOLD
operation, it will reset the internal logic of the device. To re-start communication with chip, the HOLD# must be at high and
then CS# must be at low.
Figure 1. Hold Condition
CS#
SCLK
HOLD#
HOLD
HOLD
8
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
5. DATA PROTECTION
The GD25Q64C provide the following data protection methods:
◆
Write Enable (WREN) command: The WREN command is set the Write Enable Latch bit (WEL). The WEL bit will
return to reset by the following situation:
-Power-Up
-Write Disable (WRDI)
-Write Status Register (WRSR)
-Page Program (PP)
-Sector Erase (SE) / Block Erase (BE) / Chip Erase (CE)
-Software reset (66H+99H)
◆
Software Protection Mode: The Block Protect (BP4, BP3, BP2, BP1, and BP0) bits define the section of the memory
array that can be read but not change.
◆
Hardware Protection Mode: WP# goes low to protect the BP0~BP4 bits and SRP0~1 bits.
◆
Deep Power-Down Mode: In Deep Power-Down Mode, all commands are ignored except the Release from Deep
Power-Down Mode command and reset command (66H+99H).
Table1.0 GD25Q64C Protected area size (CMP=0)
Status Register Content
Memory Content
BP4
BP3
BP2
BP1
BP0
Blocks
Addresses
Density
Portion
X
X
0
0
0
NONE
NONE
NONE
NONE
0
0
0
0
1
126 to 127
7E0000H-7FFFFFH
128KB
Upper 1/64
0
0
0
1
0
124 to 127
7C0000H-7FFFFFH
256KB
Upper 1/32
0
0
0
1
1
120 to 127
780000H-7FFFFFH
512KB
Upper 1/16
0
0
1
0
0
112 to 127
700000H-7FFFFFH
1MB
Upper 1/8
0
0
1
0
1
96 to 127
600000H-7FFFFFH
2MB
Upper 1/4
0
0
1
1
0
64 to 127
400000H-7FFFFFH
4MB
Upper 1/2
0
1
0
0
1
0 to 1
000000H-01FFFFH
128KB
Lower 1/64
0
1
0
1
0
0 to 3
000000H-03FFFFH
256KB
Lower 1/32
0
1
0
1
1
0 to 7
000000H-07FFFFH
512KB
Lower 1/16
0
1
1
0
0
0 to 15
000000H-0FFFFFH
1MB
Lower 1/8
0
1
1
0
1
0 to 31
000000H-1FFFFFH
2MB
Lower 1/4
0
1
1
1
0
0 to 63
000000H-3FFFFFH
4MB
Lower 1/2
X
X
1
1
1
0 to 127
000000H-7FFFFFH
8MB
ALL
1
0
0
0
1
127
7FF000H-7FFFFFH
4KB
Top Block
1
0
0
1
0
127
7FE000H-7FFFFFH
8KB
Top Block
1
0
0
1
1
127
7FC000H-7FFFFFH
16KB
Top Block
1
0
1
0
X
127
7F8000H-7FFFFFH
32KB
Top Block
1
0
1
1
0
127
7F8000H-7FFFFFH
32KB
Top Block
1
1
0
0
1
0
000000H-000FFFH
4KB
Bottom Block
1
1
0
1
0
0
000000H-001FFFH
8KB
Bottom Block
1
1
0
1
1
0
000000H-003FFFH
16KB
Bottom Block
1
1
1
0
X
0
000000H-007FFFH
32KB
Bottom Block
9
3.3V Uniform Sector
Dual and Quad Serial Flash
1
1
1
1
0
0
GD25Q64C
000000H-007FFFH
32KB
Bottom Block
Table1.1 GD25Q64C Protected area size (CMP=1)
Status Register Content
Memory Content
BP4
BP3
BP2
BP1
BP0
Blocks
Addresses
Density
Portion
X
X
0
0
0
ALL
000000H-7FFFFFH
ALL
ALL
0
0
0
0
1
0 to 125
000000H-7DFFFFH
8064KB
Lower 63/64
0
0
0
1
0
0 to 123
000000H-7BFFFFH
7936KB
Lower 31/32
0
0
0
1
1
0 to 119
000000H-77FFFFH
7680KB
Lower 15/16
0
0
1
0
0
0 to 111
000000H-6FFFFFH
7MB
Lower 7/8
0
0
1
0
1
0 to 95
000000H-5FFFFFH
6MB
Lower 3/4
0
0
1
1
0
0 to 63
000000H-3FFFFFH
4MB
Lower 1/2
0
1
0
0
1
2 to 127
020000H-7FFFFFH
8064KB
Upper 63/64
0
1
0
1
0
4 to 127
040000H-7FFFFFH
7936KB
Upper 31/32
0
1
0
1
1
8 to 127
080000H-7FFFFFH
7680KB
Upper 15/16
0
1
1
0
0
16 to 127
100000H-7FFFFFH
7MB
Upper 7/8
0
1
1
0
1
32 to 127
200000H-7FFFFFH
6MB
Upper 3/4
0
1
1
1
0
64 to 127
400000H-7FFFFFH
4MB
Upper 1/2
X
X
1
1
1
NONE
NONE
NONE
NONE
1
0
0
0
1
0 to 127
000000H-7FEFFFH
8188KB
L-2047/2048
1
0
0
1
0
0 to 127
000000H-7FDFFFH
8184KB
L-1023/1024
1
0
0
1
1
0 to 127
000000H-7FBFFFH
8176KB
L-511/512
1
0
1
0
X
0 to 127
000000H-7F7FFFH
8160KB
L-255/256
1
0
1
1
0
0 to 127
000000H-7F7FFFH
8160KB
L-255/256
1
1
0
0
1
0 to 127
001000H-7FFFFFH
8188KB
U-2047/2048
1
1
0
1
0
0 to 127
002000H-7FFFFFH
8184KB
U-1023/1024
1
1
0
1
1
0 to 127
004000H-7FFFFFH
8176KB
U-511/512
1
1
1
0
X
0 to 127
008000H-7FFFFFH
8160KB
U-255/256
1
1
1
1
0
0 to 127
008000H-7FFFFFH
8160KB
U-255/256
10
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
6. STATUS REGISTER
S23
S22
S21
S20
S19
S18
S17
S16
Reserved
DRV1
DRV0
HPF
Reserved
Reserved
Reserved
Reserved
S15
S14
S13
S12
S11
S10
S9
S8
SUS1
CMP
LB3
LB2
LB1
SUS2
QE
SRP1
S7
S6
S5
S4
S3
S2
S1
S0
SRP0
BP4
BP3
BP2
BP1
BP0
WEL
WIP
The status and control bits of the Status Register are as follows:
WIP bit.
The Write in Progress (WIP) bit indicates whether the memory is busy in program/erase/write status register progress. When
WIP bit sets to 1, means the device is busy in program/erase/write status register progress, when WIP bit sets 0, means
the device is not in program/erase/write status register progress.
WEL bit.
The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. When set to 1 the internal Write
Enable Latch is set, when set to 0 the internal Write Enable Latch is reset and no Write Status Register, Program or Erase
command is accepted.
BP4, BP3, BP2, BP1, BP0 bits.
The Block Protect (BP4, BP3, BP2, BP1, and BP0) bits are non-volatile. They define the size of the area to be software
protected against Program and Erase commands. These bits are written with the Write Status Register (WRSR) command.
When the Block Protect (BP4, BP3, BP2, BP1, BP0) bits are set to 1, the relevant memory area (as defined in
Table1).becomes protected against Page Program (PP), Sector Erase (SE) and Block Erase (BE) commands. The Block
Protect (BP4, BP3, BP2, BP1, and BP0) bits can be written provided that the Hardware Protected mode has not been set.
The Chip Erase (CE) command is executed, if the Block Protect (BP2, BP1, and BP0) bits are 0 and CMP=0 or the Block
Protect (BP2, BP1, and BP0) bits are 1 and CMP=1.
SRP1, SRP0 bits.
The Status Register Protect (SRP1 and SRP0) bits are non-volatile Read/Write bits in the status register. The SRP bits
control the method of write protection: software protection, hardware protection, power supply lock-down or one time
programmable protection.
SRP1
SRP0
#WP
Status Register
0
0
X
Software Protected
Description
The Status Register can be written to after a Write Enable
command, WEL=1.(Default)
WP#=0, the Status Register locked and can not be written
0
1
0
Hardware Protected
0
1
1
Hardware Unprotected
1
0
X
1
1
X
Power Supply Lock-Down(1)
(2)
One Time Program(2)
to.
WP#=1, the Status Register is unlocked and can be written
to after a Write Enable command, WEL=1.
Status Register is protected and can not be written to again
until the next Power-Down, Power-Up cycle.
Status Register is permanently protected and can not be
written to.
NOTE:
11
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
1. When SRP1, SRP0= (1, 0), a Power-Down, Power-Up cycle will change SRP1, SRP0 to (0, 0) state.
2. This feature is available on special order (GD25Q64CxxSx). Please contact GigaDevice for details.
QE bit.
The Quad Enable (QE) bit is a non-volatile Read/Write bit in the Status Register that allows Quad operation. When the QE
bit is set to 0 (Default) the WP# pin and HOLD# pin are enable. When the QE pin is set to 1, the Quad IO2 and IO3 pins are
enabled. (The QE bit should never be set to 1 during standard SPI or Dual SPI operation if the WP# or HOLD# pins are tied
directly to the power supply or ground)
LB3, LB2, LB1, bits.
The LB3, LB2, LB1, bits are non-volatile One Time Program (OTP) bits in Status Register (S13-S11) that provide the write
protect control and status to the Security Registers. The default state of LB3-LB1 are 0, the security registers are unlocked.
The LB3-LB1 bits can be set to 1 individually using the Write Register instruction. The LB3-LB1 bits are One Time
Programmable, once they are set to 1, the Security Registers will become read-only permanently.
CMP bit
The CMP bit is a non-volatile Read/Write bit in the Status Register (S14). It is used in conjunction with the BP4-BP0 bits to
provide more flexibility for the array protection. Please see the Status registers Memory Protection table for details. The
default setting is CMP=0.
SUS1, SUS2 bit
The SUS1 and SUS2 bit are read only bits in the status register (S15 and S10) that are set to 1 after executing an
Program/Erase Suspend (75H) command (The Erase Suspend will set the SUS1 to 1,and the Program Suspend will set the
SUS2 to 1). The SUS1 and SUS2 bit are cleared to 0 by Program/Erase Resume (7AH) command, software reset (66H+99H)
command as well as a power-down, power-up cycle.
HPF bit
The High Performance Flag (HPF) bit is read only bit, that indicates the status of High Performance Mode (HPM). When
HPF bit is set to 1, it means the device is in High Performance Mode. When HPF bit is set to 0 (default), it means the device
is not in High Performance Mode.
DRV1/DRV0
The DRV1 & DRV0 bits are used to determine the output driver strength for the Read operations.
DRV1,DRV0
Driver Strength
00
100%
01
75% (default)
10
50%
11
25%
12
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
7. COMMANDS DESCRIPTION
All commands, addresses and data are shifted in and out of the device, beginning with the most significant bit on the first
rising edge of SCLK after CS# is driven low. Then, the one-byte command code must be shifted in to the device, with most
significant bit first on SI, and each bit is latched on the rising edges of SCLK.
See Table2, every command sequence starts with a one-byte command code. Depending on the command, this might be
followed by address bytes, or by data bytes, or by both or none. CS# must be driven high after the last bit of the command
sequence has been completed. For the commands of Read, Fast Read, Read Status Register or Release from Deep PowerDown, and Read Device ID, the shifted-in command sequence is followed by a data-out sequence. CS# can be driven high
after any bit of the data-out sequence is being shifted out.
For the commands of Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Write Enable, Write
Disable or Deep Power-Down command, CS# must be driven high exactly at a byte boundary, otherwise the command is
rejected, and is not executed. That means CS# must be driven high when the number of clock pulses after CS# being driven
low is an exact multiple of eight. For Page Program, if CS# is driven high at any time the input byte is not a full byte, nothing
will happen and WEL will not be reset.
Table2. Commands (Standard/Dual/Quad SPI)
Command Name
Byte 1
Write Enable
Write Disable
Volatile SR
Write Enable
Read Status Register-1
Read Status Register-2
Read Status Register-3
Write Status Register-1
Write Status Register-2
Write Status Register-3
Read Data
Fast Read
Dual Output
Fast Read
Dual I/O
Fast Read
Quad Output
Fast Read
Quad I/O
Fast Read
Quad I/O Word
Fast Read(7)
Page Program
06H
04H
50H
Byte 2
05H
35H
15H
01H
31H
11H
03H
0BH
3BH
(S7-S0)
(S15-S8)
(S23-S16)
S7-S0
S15-S8
S23-S16
A23-A16
A23-A16
A23-A16
BBH
A23-A8(2)
6BH
A23-A16
EBH
A23-A0
M7-M0(4)
A23-A0
M7-M0(4)
A23-A16
E7H
02H
Byte 3
Byte 4
Byte 5
n-Bytes
(continuous)
(continuous)
(continuous)
A15-A8
A15-A8
A15-A8
A7-A0
A7-A0
A7-A0
(D7-D0)
dummy
dummy
(Next byte)
(D7-D0)
(D7-D0)(1)
(continuous)
(continuous)
(continuous)
A7-A0
M7-M0(2)
A15-A8
(D7-D0)(1)
(Next
byte)
dummy
(Next byte)
(continuous)
(D7-D0)(3)
(continuous)
dummy(5)
(D7-D0)(3)
(Next byte)
(continuous)
dummy(6)
(D7-D0)(3)
(Next byte)
(continuous)
A15-A8
A7-A0
(Next
byte)
(Next
byte)
D7-D0
Next byte
continuous
Next byte
continuous
Next byte
continuous
A7-A0
Quad Page Program
32H
A23-A16
A15-A8
A7-A0
D7-D0(3)
Fast Page Program
F2H
A23-A16
A15-A8
A7-A0
D7-D0
Sector Erase
Block Erase(32K)
Block Erase(64K)
Chip Erase
20H
52H
D8H
C7/60
H
66H
99H
77H
A23-A16
A23-A16
A23-A16
A15-A8
A15-A8
A15-A8
A7-A0
A7-A0
A7-A0
Enable Reset
Reset
Set Burst with Wrap
Byte 6
dummy(9)
13
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
W7-W0
Program/Erase
Suspend
Program/Erase Resume
Release From Deep
Power-Down, And
Read Device ID
Release From Deep
Power-Down
Deep Power-Down
Manufacturer/
Device ID
Manufacturer/
Device ID by Dual I/O
75H
7AH
ABH
dummy
dummy
(DID7DID0)
dummy
dummy
00H
(MID7MID0)
A23-A8
A7-A0,
M7-M0
(MID7MID0)
(DID7DID0)
(continuous)
ABH
B9H
90H
92H
94H
A23-A0,
M7-M0
9FH
(MID7MID0)
dummy (10)
(MID7MID0)
(DID7DID0)
(JDID15JDID8)
dummy
dummy
dummy
5AH
A23-A16
A15-A8
A7-A0
44H
A23-A16
A15-A8
A7-A0
42H
A23-A16
A15-A8
48H
A23-A16
A15-A8
Manufacturer/
Device ID by Quad I/O
Read Identification
dummy
High Performance
(DID7DID0)
(continuous)
(continuous)
(continuous)
(JDID7JDID0)
(continuous)
A3H
Mode
Read Serial Flash
Discoverable Parameter
Erase Security
Registers(8)
Program Security
Registers(8)
Read Security
Registers(8)
dummy
(D7-D0)
(continuous)
A7-A0
D7-D0
D7-D0
continuous
A7-A0
dummy
(D7-D0)
(continuous)
NOTE:
1. Dual Output data
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
2. Dual Input Address
IO0 = A22, A20, A18, A16, A14, A12, A10, A8
A6, A4, A2, A0, M6, M4, M2, M0
IO1 = A23, A21, A19, A17, A15, A13, A11, A9
A7, A5, A3, A1, M7, M5, M3, M1
3. Quad Output Data
IO0 = (D4, D0, …..)
IO1 = (D5, D1, …..)
IO2 = (D6, D2, …..)
IO3 = (D7, D3,…..)
4. Quad Input Address
IO0 = A20, A16, A12, A8,
A4, A0, M4, M0
IO1 = A21, A17, A13, A9,
A5, A1, M5, M1
IO2 = A22, A18, A14, A10, A6, A2, M6, M2
IO3 = A23, A19, A15, A11, A7, A3, M7, M3
5. Fast Read Quad I/O Data
14
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
IO0 = (x, x, x, x, D4, D0,…)
IO1 = (x, x, x, x, D5, D1,…)
IO2 = (x, x, x, x, D6, D2,…)
IO3 = (x, x, x, x, D7, D3,…)
6. Fast Word Read Quad I/O Data
IO0 = (x, x, D4, D0,…)
IO1 = (x, x, D5, D1,…)
IO2 = (x, x, D6, D2,…)
IO3 = (x, x, D7, D3,…)
7. Fast Word Read Quad I/O Data: the lowest address bit must be 0.
8. Security Registers Address:
Security Register1: A23-A16=00H, A15-A8=10H, A7-A0= Byte Address;
Security Register2: A23-A16=00H, A15-A8=20H, A7-A0= Byte Address;
Security Register3: A23-A16=00H, A15-A8=30H, A7-A0= Byte Address.
9. Dummy bits and Wrap Bits
IO0 = (x, x, x, x, x, x, W4,x)
IO1 = (x, x, x, x, x, x, W5, x)
IO2 = (x, x, x, x, x, x, W6, x)
IO3 = (x, x, x, x, x, x, x, x)
10. Address, Continuous Read Mode bits, Dummy bits, Manufacture ID and Device ID
IO0 = (A20, A16, A12, A8, A4, A0,
M4, M0, x, x, x, x, MID4, MID0, DID4, DID0, …)
IO1 = (A21, A17, A13, A9, A5, A1,
M5, M1, x, x, x, x, MID5, MID1, DID5, DID1, …)
IO2 = (A22, A18, A14, A10, A6, A2, M6, M2,
x, x, x, x, MID6, MID2, DID6, DID2, …)
IO3 = (A23, A19, A15, A11, A7, A3, M7, M3,
x, x, x, x, MID7, MID3, DID7, DID3, …)
Table of ID Definitions:
GD25Q64C
Operation Code
MID7-MID0
ID15-ID8
ID7-ID0
9FH
C8
40
17
90H/92H/94H
C8
16
ABH
16
15
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
7.1. Write Enable (WREN) (06H)
The Write Enable (WREN) command is for setting the Write Enable Latch (WEL) bit. The Write Enable Latch (WEL) bit must
be set prior to every Page Program (PP), Sector Erase (SE), Block Erase (BE), Chip Erase (CE), Write Status Register
(WRSR) and Erase/Program Security Registers command. The Write Enable (WREN) command sequence: CS# goes low
sending the Write Enable command CS# goes high.
Figure 2. Write Enable Sequence Diagram
CS#
SCLK
0
1
2
3
4
5
6
7
Command
SI
06H
High-Z
SO
7.2. Write Disable (WRDI) (04H)
The Write Disable command is for resetting the Write Enable Latch (WEL) bit. The Write Disable command sequence: CS#
goes low Sending the Write Disable command CS# goes high. The WEL bit is reset by following condition: Power-up
and upon completion of the Write Status Register, Page Program, Sector Erase, Block Erase, Chip Erase, Erase/Program
Security Registers and Reset commands.
Figure 3. Write Disable Sequence Diagram
CS#
SCLK
SI
SO
0
1
2
3
4
5
Command
04H
High-Z
16
6
7
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
7.3. Write Enable for Volatile Status Register (50H)
The non-volatile Status Register bits can also be written to as volatile bits. This gives more flexibility to change the system
configuration and memory protection schemes quickly without waiting for the typical non-volatile bit write cycles or affecting
the endurance of the Status Register non-volatile bits. The Write Enable for Volatile Status Register command must be
issued prior to a Write Status Register command and any other commands can't be inserted between them. Otherwise,
Write Enable for Volatile Status Register will be cleared. The Write Enable for Volatile Status Register command will not set
the Write Enable Latch bit, it is only valid for the Write Status Register command to change the volatile Status Register bit
values.
Figure 4. Write Enable for Volatile Status Register Sequence Diagram
CS#
SCLK
0
1
2
3
4
5
6
7
Command(50H)
SI
SO
High-Z
7.4. Read Status Register (RDSR) (05H or 35H or 15H)
The Read Status Register (RDSR) command is for reading the Status Register. The Status Register may be read at any
time, even while a Program, Erase or Write Status Register cycle is in progress. When one of these cycles is in progress, it
is recommended to check the Write in Progress (WIP) bit before sending a new command to the device. It is also possible
to read the Status Register continuously. For command code “05H” / “35H” / “15H”, the SO will output Status Register bits
S7~S0 / S15-S8 / S16-S23.
Figure 5. Read Status Register Sequence Diagram
CS#
SCLK
SI
SO
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
7
6
Command
05H or 35H or 15H
High-Z
Register0/1/2
5 4 3 2 1
MSB
Register0/1/2
0
7
MSB
17
6
5
4
3
2
1
0
7
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
7.5. Write Status Register (WRSR) (01H or 31H or 11H)
The Write Status Register (WRSR) command allows new values to be written to the Status Register. Before it can be
accepted, a Write Enable (WREN) command must previously have been executed. After the Write Enable (WREN)
command has been decoded and executed, the device sets the Write Enable Latch (WEL).
The Write Status Register (WRSR) command has no effect on S23, S20, S19, S18, S17, S16, S15, S10, S1 and S0
of the Status Register. CS# must be driven high after the eighth bit of the data byte has been latched in. If not, the Write
Status Register (WRSR) command is not executed. As soon as CS# is driven high, the self-timed Write Status Register
cycle (whose duration is tW) is initiated. While the Write Status Register cycle is in progress, the Status Register may still
be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed
Write Status Register cycle, and is 0 when it is completed. When the cycle is completed, the Write Enable Latch (WEL) is
reset.
The Write Status Register (WRSR) command allows the user to change the values of the Block Protect (BP4, BP3, BP2,
BP1, and BP0) bits, to define the size of the area that is to be treated as read-only, as defined in Table1. The Write Status
Register (WRSR) command also allows the user to set or reset the Status Register Protect (SRP1 and SRP0) bits in
accordance with the Write Protect (WP#) signal. The Status Register Protect (SRP1 and SRP0) bits and Write Protect (WP#)
signal allow the device to be put in the Hardware Protected Mode. The Write Status Register (WRSR) command is not
executed once the Hardware Protected Mode is entered.
Figure 6. Write Status Register Sequence Diagram
CS#
SCLK
0
1
2
3 4
5
6
7
8
Command
SI
SO
01H/31H/11H
9 10 11 12 13 14 15
Status Register in
7
MSB
6
5
4
3
High-Z
18
2
1
0
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
7.6. Read Data Bytes (READ) (03H)
The Read Data Bytes (READ) command is followed by a 3-byte address (A23-A0), and each bit is latched-in on the rising
edge of SCLK. Then the memory content at that address is shifted out on SO, and each bit is shifted out at a Max frequency
fR on the falling edge of SCLK. The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out. The whole memory can, therefore, be read with a single
Read Data Bytes (READ) command. Any Read Data Bytes (READ) command, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Figure 7. Read Data Bytes Sequence Diagram
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
Command
SI
24-bit address
03H
23 22 21
2
1
0
MSB
High-Z
SO
3
MSB
7
6
5
Data Out1
4 3 2 1
Data Out2
0
7.7. Read Data Bytes at Higher Speed (Fast Read) (0BH)
The Read Data Bytes at Higher Speed (Fast Read) command is for quickly reading data out. It is followed by a 3-byte
address (A23-A0) and a dummy byte, and each bit is latched-in on the rising edge of SCLK. Then the memory content, at
that address, is shifted out on SO, and each bit is shifted out, at a Max frequency fC3, on the falling edge of SCLK. The first
byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte
of data is shifted out.
Figure 8. Read Data Bytes at Higher Speed Sequence Diagram
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
SCLK
Command
SI
24-bit address
0BH
23 22 21
3
2
1
0
High-Z
SO
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Dummy Byte
SI
SO
7
6
5
4
3
2
1
0
7 6
MSB
19
Data Out1
5 4 3 2
1
0
Data Out2
7 6 5
MSB
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
7.8. Dual Output Fast Read (3BH)
The Dual Output Fast Read command is followed by 3-byte address (A23-A0) and a dummy byte, and each bit is latched
in on the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO.
The command sequence is shown in followed Figure 9. The first byte addressed can be at any location. The address is
automatically incremented to the next higher address after each byte of data is shifted out.
Figure 9. Dual Output Fast Read Sequence Diagram
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
SCLK
Command
SI
SO
24-bit address
3BH
23 22 21
3
2
1
High-Z
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Dummy Clocks
SI
SO
6
0
6
Data Out1
Data Out2
7 5 3 1 7 5 3 1
MSB
MSB
7
20
4
2
0
6
4
2
0
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
7.9. Quad Output Fast Read (6BH)
The Quad Output Fast Read command is followed by 3-byte address (A23-A0) and a dummy byte, and each bit is latched
in on the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO3, IO2, IO1 and IO0.
The command sequence is shown in followed Figure10. The first byte addressed can be at any location. The address is
automatically incremented to the next higher address after each byte of data is shifted out. The Quad Enable bit (QE) of
Status Register (S9) must be set to enable for the Quad Output Fast Read command.
Figure 10. Quad Output Fast Read Sequence Diagram
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
SCLK
Command
SI(IO0)
24-bit address
6BH
23 22 21
SO(IO1)
High-Z
WP#(IO2)
High-Z
HOLD#(IO3)
High-Z
3
2
1
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Dummy Clocks
SI(IO0)
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7 3 7 3 7 3 7 3 7
Byte1 Byte2 Byte3 Byte4
21
0
3.3V Uniform Sector
Dual and Quad Serial Flash
7.10.
GD25Q64C
Dual I/O Fast Read (BBH)
The Dual I/O Fast Read command is similar to the Dual Output Fast Read command but with the capability to input the 3byte address (A23-0) and a “Continuous Read Mode” byte 2-bit per clock by SI and SO, and each bit is latched in on the
rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO. The command sequence
is shown in followed Figure11. The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out.
Dual I/O Fast Read with “Continuous Read Mode”
The Dual I/O Fast Read command can further reduce command overhead through setting the “Continuous Read Mode” bits
(M7-4) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M5-4) = (1, 0), then the next Dual I/O
Fast Read command (after CS# is raised and then lowered) does not require the BBH command code. The command
sequence is shown in followed Figure12. If the “Continuous Read Mode” bits (M5-4) do not equal (1, 0), the next command
requires the command code, thus returning to normal operation. A “Continuous Read Mode” Reset command can be used
to reset (M5-4) before issuing normal command.
Figure 11. Dual I/O Fast Read Sequence Diagram (M5-4≠ (1, 0))
CS#
0
SCLK
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
6
4
2
0
6
4
2
0
6
4
2
0
6
4
7
5
3
1
7
5
3
1
7
5
3
1
7
5
Command
SI(IO0)
BBH
SO(IO1)
A23-16
A15-8
A7-0
CS#
SCLK
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39
SI(IO0)
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
6
SO(IO1)
7
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
7
Byte1
Byte2
Byte3
Byte4
22
M7-4 Dummy
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
Figure 12. Dual I/O Fast Read Sequence Diagram (M5-4= (1, 0))
CS#
SCLK
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
6
4
2
0
6
4
2
0
6
4
2
0
6
4
5
3
1
7
5
3
1
7
5
3
1
7
5
7
A23-16
A15-8
A7-0
M7-4 Dummy
CS#
SCLK
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31
SI(IO0)
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
6
SO(IO1)
7
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
7
Byte1
7.11.
Byte2
Byte3
Byte4
Quad I/O Fast Read (EBH)
The Quad I/O Fast Read command is similar to the Dual I/O Fast Read command but with the capability to input the 3-byte
address (A23-0) and a “Continuous Read Mode” byte and 4-dummy clock 4-bit per clock by IO0, IO1, IO2, IO3, and each
bit is latched in on the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO0, IO1,
IO2, IO3. The command sequence is shown in followed Figure13. The first byte addressed can be at any location. The
address is automatically incremented to the next higher address after each byte of data is shifted out. The Quad Enable bit
(QE) of Status Register (S9) must be set to enable for the Quad I/O Fast read command.
Quad I/O Fast Read with “Continuous Read Mode”
The Quad I/O Fast Read command can further reduce command overhead through setting the “Continuous Read Mode”
bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M5-4) = (1, 0), then the next Quad
I/O Fast Read command (after CS# is raised and then lowered) does not require the EBH command code. The command
sequence is shown in followed Figure14. If the “Continuous Read Mode” bits (M5-4) do not equal to (1, 0), the next command
requires the command code, thus returning to normal operation. A “Continuous Read Mode” Reset command can be used
to reset (M5-4) before issuing normal command.
23
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
Figure 13. Quad I/O Fast Read Sequence Diagram (M5-4≠ (1, 0))
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
SCLK
Command
SI(IO0)
EBH
A23-16 A15-8 A7-0 M7-0
Dummy
Byte1 Byte2
Figure 14. Quad I/O Fast Read Sequence Diagram (M5-4= (1, 0))
CS#
0
1
2
3
4
5
6
7
SI(IO0)
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
SCLK
A23-16 A15-8 A7-0 M7-0
24
8
9 10 11 12 13 14 15
Dummy
Byte1 Byte2
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
Quad I/O Fast Read with “8/16/32/64-Byte Wrap Around” in Standard SPI mode
The Quad I/O Fast Read command can be used to access a specific portion within a page by issuing “Set Burst with Wrap”
(77H) commands prior to EBH. The “Set Burst with Wrap” (77H) command can either enable or disable the “Wrap Around”
feature for the following EBH commands. When “Wrap Around” is enabled, the data being accessed can be limited to either
an 8/16/32/64-byte section of a 256-byte page. The output data starts at the initial address specified in the command, once
it reaches the ending boundary of the 8/16/32/64-byte section, the output will wrap around the beginning boundary
automatically until CS# is pulled high to terminate the command.
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache
afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read commands. The “Set Burst with Wrap”
command allows three “Wrap Bits” W6-W4 to be set. The W4 bit is used to enable or disable the “Wrap Around” operation
while W6-W5 is used to specify the length of the wrap around section within a page.
7.12.
Quad I/O Word Fast Read (E7H)
The Quad I/O Word Fast Read command is similar to the Quad I/O Fast Read command except that the lowest address bit
(A0) must be equal 0 and there are only 2-dummy clocks. The command sequence is shown in followed Figure15. The first
byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte
of data is shifted out. The Quad Enable bit (QE) of Status Register (S9) must be set to enable for the Quad I/O Word Fast
read command.
Quad I/O Word Fast Read with “Continuous Read Mode”
The Quad I/O Word Fast Read command can further reduce command overhead through setting the “Continuous Read
Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M5-4) = (1, 0), then the next
Quad I/O Word Fast Read command (after CS# is raised and then lowered) does not require the E7H command code. The
command sequence is shown in followed Figure16. If the “Continuous Read Mode” bits (M5-4) do not equal to (1, 0), the
next command requires the first E7H command code, thus returning to normal operation. A “Continuous Read Mode” Reset
command can be used to reset (M5-4) before issuing normal command.
Figure 15. Quad I/O Word Fast Read Sequence Diagram (M5-4≠ (1, 0))
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
SCLK
Command
SI(IO0)
E7H
A23-16 A15-8 A7-0 M7-0 Dummy Byte1 Byte2 Byte3
25
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
Figure 16. Quad I/O Word Fast Read Sequence Diagram (M5-4= (1, 0))
CS#
0
1
2
3
4
5
6
7
SI(IO0)
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
SCLK
8
9 10 11 12 13 14 15
A23-16 A15-8 A7-0 M7-0 Dummy Byte1 Byte2 Byte3
Quad I/O Word Fast Read with “8/16/32/64-Byte Wrap Around” in Standard SPI mode
The Quad I/O Word Fast Read command can be used to access a specific portion within a page by issuing “Set Burst with
Wrap” (77H) commands prior to E7H. The “Set Burst with Wrap” (77H) command can either enable or disable the “Wrap
Around” feature for the following E7H commands. When “Wrap Around” is enabled, the data being accessed can be limited
to either an 8/16/32/64-byte section of a 256-byte page. The output data starts at the initial address specified in the command,
once it reaches the ending boundary of the 8/16/32/64-byte section, the output will wrap around the beginning boundary
automatically until CS# is pulled high to terminate the command.
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache
afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read commands. The “Set Burst with Wrap”
command allows three “Wrap Bits” W6-W4 to be set. The W4 bit is used to enable or disable the “Wrap Around” operation
while W6-W5 is used to specify the length of the wrap around section within a page.
26
3.3V Uniform Sector
Dual and Quad Serial Flash
7.13.
GD25Q64C
Set Burst with Wrap (77H)
The Set Burst with Wrap command is used in conjunction with “Quad I/O Fast Read” and “Quad I/O Word Fast Read”
command to access a fixed length of 8/16/32/64-byte section within a 256-byte page.
The Set Burst with Wrap command sequence: CS# goes low Send Set Burst with Wrap command Send 24 dummy
bits Send 8 bits “Wrap bits” CS# goes high.
W6,W5
W4=0
W4=1 (default)
Wrap Around
Wrap Length
Wrap Around
Wrap Length
0, 0
Yes
8-byte
No
N/A
0, 1
Yes
16-byte
No
N/A
1, 0
Yes
32-byte
No
N/A
1, 1
Yes
64-byte
No
N/A
If the W6-W4 bits are set by the Set Burst with Wrap command, all the following “Quad I/O Fast Read” and “Quad I/O Word
Fast Read” command will use the W6-W4 setting to access the 8/16/32/64-byte section within any page. To exit the “Wrap
Around” function and return to normal read operation, another Set Burst with Wrap command should be issued to set W4=1.
Figure 17. Set Burst with Wrap Sequence Diagram
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
x
x
x
x
x
x
4
x
SO(IO1)
x
x
x
x
x
x
5
x
WP#(IO2)
x
x
x
x
x
x
6
x
HOLD#(IO3)
x
x
x
x
x
x
x
x
SCLK
Command
SI(IO0)
77H
W6-W4
7.14.
Page Program (PP) (02H)
The Page Program (PP) command is for programming the memory. A Write Enable (WREN) command must previously
have been executed to set the Write Enable Latch (WEL) bit before sending the Page Program command.
The Page Program (PP) command is entered by driving CS# Low, followed by the command code, three address bytes and
at least one data byte on SI. If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data that goes
beyond the end of the current page are programmed from the start address of the same page (from the address whose 8
least significant bits (A7-A0) are all zero). CS# must be driven low for the entire duration of the sequence. The Page Program
command sequence: CS# goes low sending Page Program command 3-byte address on SI at least 1 byte data on
SI CS# goes high. The command sequence is shown in Figure18. If more than 256 bytes are sent to the device, previously
latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page.
If less than 256 data bytes are sent to device, they are correctly programmed at the requested addresses without having
any effects on the other bytes of the same page. CS# must be driven high after the eighth bit of the last data byte has been
latched in; otherwise the Page Program (PP) command is not executed.
As soon as CS# is driven high, the self-timed Page Program cycle (whose duration is t PP) is initiated. While the Page
27
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
Program cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The
Write in Progress (WIP) bit is 1 during the self-timed Page Program cycle, and is 0 when it is completed. At some unspecified
time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.
A Page Program (PP) command applied to a page which is protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0)
is not executed.
Figure 18. Page Program Sequence Diagram
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
Command
24-bit address
23 22 21
3
2
1
0 7
MSB
6
5
4
3
2
1
2078
2079
2077
2075
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
2076
CS#
2072
MSB
2073
02H
Data Byte 1
2074
SI
1
0
SCLK
Data Byte 2
SI
7
MSB
6
5
4
3
2
Data Byte 3
1
0 7
6
5
4
3
MSB
2
Data Byte 256
1
0
7
MSB
28
6
5
4
3
2
0
3.3V Uniform Sector
Dual and Quad Serial Flash
7.15.
GD25Q64C
Quad Page Program (32H)
The Quad Page Program command is for programming the memory using four pins: IO0, IO1, IO2, and IO3. To use Quad
Page Program the Quad enable in status register Bit9 must be set (QE=1). A Write Enable (WREN) command must
previously have been executed to set the Write Enable Latch (WEL) bit before sending the Page Program command. The
quad Page Program command is entered by driving CS# Low, followed by the command code (32H), three address bytes
and at least one data byte on IO pins.
The command sequence is shown in Figure19. If more than 256 bytes are sent to the device, previously latched data are
discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page. If less than 256
data bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the
other bytes of the same page. CS# must be driven high after the eighth bit of the last data byte has been latched in; otherwise
the Quad Page Program (PP) command is not executed.
As soon as CS# is driven high, the self-timed Quad Page Program cycle (whose duration is tPP) is initiated. While the Quad
Page Program cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit.
The Write in Progress (WIP) bit is 1 during the self-timed Quad Page Program cycle, and is 0 when it is completed. At some
unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.
A Quad Page Program command applied to a page which is protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0)
is not executed.
Figure 19. Quad Page Program Sequence Diagram
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
Command
24-bit address
0
4
0
4
0
4
0
SO(IO1)
5
1
5
1
5
1
5
1
WP#(IO2)
6
2
6
2
6
2
6
2
HOLD#(IO3)
7
3
7
3
7
3
7
3
538
539
540
541
542
543
32H
23 22 21
3
2
Byte1 Byte2
0 4
537
SI(IO0)
1
0
4
0
MSB
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
536
CS#
SCLK
Byte11Byte12
Byte253
Byte256
SI(IO0)
4
SO(IO1)
5 1
5 1
5 1
5 1
5 1
5 1
5 1
5 1
5 1
5 1
5 1
5 1
WP#(IO2)
6 2
6 2
6 2
6 2
6 2
6 2
6 2
6 2
6 2
6 2
6 2
6 2
HOLD#(IO3)
7 3
7 3
7 3
7 3
7 3
7 3
7 3
7 3
7 3
7 3
7 3
7 3
0
4
0
4
0
4
0
4
0
4
0
4
29
0
4
0
4
0
4
4
0
3.3V Uniform Sector
Dual and Quad Serial Flash
7.16.
GD25Q64C
Fast Page Program (FPP) (F2H)
The Fast Page Program (FPP) command is used to program the memory. A Write Enable (WREN) command must
previously have been executed to set the Write Enable Latch (WEL) bit before sending the Page Program command.
The Fast Page Program (FPP) command is entered by driving CS# Low, followed by the command code, three address
bytes and at least one data byte on SI. If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data
that goes beyond the end of the current page are programmed from the start address of the same page (from the address
whose 8 least significant bits (A7-A0) are all zero). CS# must be driven low for the entire duration of the sequence.
The Page Program command sequence: CS# goes low sending Page Program command 3-byte address on SI at
least 1 byte data on SI CS# goes high.
The command sequence is shown in Figure 20. If more than 256 bytes are sent to the device, previously latched data are
discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page. If less than 256
data bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the
other bytes of the same page. CS# must be driven high after the eighth bit of the last data byte has been latched in; otherwise
the Fast Page Program (FPP) command is not executed.
As soon as CS# is driven high, the self-timed Page Program cycle (whose duration is t PP) is initiated. While the Page
Program cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The
Write In Progress (WIP) bit is 1 during the self-timed Page Program cycle, and is 0 when it is completed. At some unspecified
time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.
A Fast Page Program (FPP) command is not executed when it is applied to a page protected by the Block Protect (BP4,
BP3, BP2, BP1, BP0).
Figure 20. Fast Page Program Sequence Diagram
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
Command
24-bit address
23 22 21
3
2
1
0 7
MSB
6
5
4
3
2
1
2078
2079
2077
2075
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
2076
CS#
2072
MSB
2073
F2H
Data Byte 1
2074
SI
1
0
SCLK
Data Byte 2
SI
7
MSB
6
5
4
3
2
Data Byte 3
1
0 7
6
5
4
3
MSB
2
Data Byte 256
1
0
7
MSB
30
6
5
4
3
2
0
3.3V Uniform Sector
Dual and Quad Serial Flash
7.17.
GD25Q64C
Sector Erase (SE) (20H)
The Sector Erase (SE) command is used to erase all the data of the chosen sector. A Write Enable (WREN) command
must previously have been executed to set the Write Enable Latch (WEL) bit. The Sector Erase (SE) command is entered
by driving CS# low, followed by the command code, and 3-address byte on SI. Any address inside the sector is a valid
address for the Sector Erase (SE) command. CS# must be driven low for the entire duration of the sequence.
The Sector Erase command sequence: CS# goes low sending Sector Erase command 3-byte address on SI CS#
goes high. The command sequence is shown below. CS# must be driven high after the eighth bit of the last address byte
has been latched in; otherwise the Sector Erase (SE) command is not executed. As soon as CS# is driven high, the selftimed Sector Erase cycle (whose duration is tSE) is initiated. While the Sector Erase cycle is in progress, the Status Register
may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed
Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable
Latch (WEL) bit is reset. A Sector Erase (SE) command applied to a sector which is protected by the Block Protect (BP4,
BP3, BP2, BP1, and BP0) bit (see Table1&1a) is not executed.
Figure 21. Sector Erase Sequence Diagram
CS#
SCLK
0
1
2
3
4
5
6
8
Command
SI
9
29 30 31
24 Bits Address
20H
7.18.
7
23 22
MSB
2
1
0
32KB Block Erase (BE) (52H)
The 32KB Block Erase (BE) command is used to erase all the data of the chosen block. A Write Enable (WREN) command
must previously have been executed to set the Write Enable Latch (WEL) bit. The 32KB Block Erase (BE) command is
entered by driving CS# low, followed by the command code, and three address bytes on SI. Any address inside the block
is a valid address for the 32KB Block Erase (BE) command. CS# must be driven low for the entire duration of the sequence.
The 32KB Block Erase command sequence: CS# goes low sending 32KB Block Erase command 3-byte address on
SI CS# goes high. The command sequence is shown below. CS# must be driven high after the eighth bit of the last
address byte has been latched in; otherwise the 32KB Block Erase (BE) command is not executed. As soon as CS# is
driven high, the self-timed Block Erase cycle (whose duration is tBE) is initiated. While the Block Erase cycle is in progress,
the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1
during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset. A 32KB Block Erase (BE) command applied to a block which is
protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0) bits (see Table1&1a) is not executed.
Figure 22. 32KB Block Erase Sequence Diagram
CS#
SCLK
SI
0
1
2
3
4
5
6
7
Command
52H
8
9
29 30 31
24 Bits Address
23 22
MSB
31
2
1
0
3.3V Uniform Sector
Dual and Quad Serial Flash
7.19.
GD25Q64C
64KB Block Erase (BE) (D8H)
The 64KB Block Erase (BE) command is used to erase all the data of the chosen block. A Write Enable (WREN) command
must previously have been executed to set the Write Enable Latch (WEL) bit. The 64KB Block Erase (BE) command is
entered by driving CS# low, followed by the command code, and three address bytes on SI. Any address inside the block
is a valid address for the 64KB Block Erase (BE) command. CS# must be driven low for the entire duration of the sequence.
The 64KB Block Erase command sequence: CS# goes low sending 64KB Block Erase command 3-byte address on
SI CS# goes high. The command sequence is shown below. CS# must be driven high after the eighth bit of the last
address byte has been latched in; otherwise the 64KB Block Erase (BE) command is not executed. As soon as CS# is
driven high, the self-timed Block Erase cycle (whose duration is tBE) is initiated. While the Block Erase cycle is in progress,
the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1
during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset. A 64KB Block Erase (BE) command applied to a block which is
protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0) bits (see Table1&1a) is not executed.
Figure 23. 64KB Block Erase Sequence Diagram
CS#
SCLK
0
1
2
3
4
5
6
8
9
Command
SI
29 30 31
24 Bits Address
D8H
7.20.
7
23 22
MSB
2
1
0
Chip Erase (CE) (60/C7H)
The Chip Erase (CE) command is used to erase all the data of the chip. A Write Enable (WREN) command must previously
have been executed to set the Write Enable Latch (WEL) bit .The Chip Erase (CE) command is entered by driving CS# Low,
followed by the command code on Serial Data Input (SI). CS# must be driven Low for the entire duration of the sequence.
The Chip Erase command sequence: CS# goes low sending Chip Erase command CS# goes high. The command
sequence is shown below. CS# must be driven high after the eighth bit of the command code has been latched in; otherwise
the Chip Erase command is not executed. As soon as CS# is driven high, the self-timed Chip Erase cycle (whose duration
is tCE) is initiated. While the Chip Erase cycle is in progress, the Status Register may be read to check the value of the Write
in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Chip Erase cycle, and is 0 when it is
completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. The Chip
Erase (CE) command is executed if the Block Protect (BP2, BP1, and BP0) bits are 0 and CMP=0 or the Block Protect (BP2,
BP1, and BP0) bits are 1 and CMP=1. The Chip Erase (CE) command is ignored if one or more sectors are protected.
Figure 24. Chip Erase Sequence Diagram
CS#
SCLK
SI
0
1
2
3
4
5
Command
60H or C7H
32
6
7
3.3V Uniform Sector
Dual and Quad Serial Flash
7.21.
GD25Q64C
Deep Power-Down (DP) (B9H)
Executing the Deep Power-Down (DP) command is the only way to put the device in the lowest consumption mode (the
Deep Power-Down Mode). It can also be used as an extra software protection mechanism, while the device is not in active
use, since in this mode, the device ignores all Write, Program and Erase commands.
Driving CS# high deselects the device, and puts the device in the Standby Mode (if there is no internal cycle currently in
progress). But this mode is not the Deep Power-Down Mode. The Deep Power-Down Mode can only be entered by
executing the Deep Power-Down (DP) command. Once the device has entered the Deep Power-Down Mode, all commands
are ignored except the Release from Deep Power-Down and Read Device ID (RDI) command or software reset command.
The Release from Deep Power-Down and Read Device ID (RDI) command releases the device from Deep power-Down
mode , also allows the Device ID of the device to be output on SO.
The Deep Power-Down Mode automatically stops at Power-Down, and the device is in the Standby Mode after Power-Up.
The Deep Power-Down command sequence: CS# goes low sending Deep Power-Down command CS# goes high.
The command sequence is shown below. CS# must be driven high after the eighth bit of the command code has been
latched in; otherwise the Deep Power-Down (DP) command is not executed. As soon as CS# is driven high, it requires a
delay of tDP before the supply current is reduced to ICC2 and the Deep Power-Down Mode is entered. Any Deep PowerDown (DP) command, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the
cycle that is in progress.
Figure 25. Deep Power-Down Sequence Diagram
CS#
SCLK
SI
0 1 2 3 4 5 6 7
Command
tDP
Stand-by mode Deep Power-down mode
B9H
7.22. Release from Deep Power-Down or High Performance Mode and Read
Device ID (RDI) (ABH)
The Release from Power-Down or High Performance Mode / Device ID command is a multi-purpose command. It can be used
to release the device from the Power-Down state or High Performance Mode or obtain the devices electronic identification
(ID) number.
To release the device from the Power-Down state or High Performance Mode, the command is issued by driving the CS#
pin low, shifting the instruction code “ABH” and driving CS# high as shown in Figure26. Release from Power-Down will
take the time duration of tRES1 (See AC Characteristics) before the device will resume normal operation and other
command are accepted. The CS# pin must remain high during the tRES1 time duration.
When used only to obtain the Device ID while not in the Power-Down state, the command is initiated by driving the CS#
pin low and shifting the instruction code “ABH” followed by 3-dummy byte. The Device ID bits are then shifted out on the
falling edge of SCLK with most significant bit (MSB) first as shown in Figure27. The Device ID value is listed in
Manufacturer and Device Identification table. The Device ID can be read continuously. The command is completed by
driving CS# high.
33
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
When used to release the device from the Power-Down state and obtain the Device ID, the command is the same as
previously described, and shown in Figure27, except that after CS# is driven high it must remain high for a time duration
of tRES2 (See AC Characteristics). After this time duration the device will resume normal operation and other command will
be accepted. If the Release from Power-Down / Device ID command is issued while an Erase, Program or Write cycle is
in process (when WIP equal 1) the command is ignored and will not have any effects on the current cycle.
Figure 26. Release Power-Down Sequence or High Performance Mode Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
t RES1
7
Command
SI
ABH
Deep Power-down mode
Stand-by mode
Figure 27. Release Power-Down/Read Device ID Sequence Diagram
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31 32 33 34 35 36 37 38
SCLK
Command
SI
SO
ABH
High-Z
t RES2
3 Dummy Bytes
23 22
2
1
0
MSB
7
MSB
7.23.
6
Device ID
5 4 3 2
1
0
Deep Power-down Mode Stand-by Mode
Read Manufacture ID/ Device ID (REMS) (90H)
The Read Manufacturer/Device ID command is an alternative to the Release from Power-Down / Device ID command that
provides both the JEDEC assigned Manufacturer ID and the specific Device ID.
The command is initiated by driving the CS# pin low and shifting the command code “90H” followed by a 24-bit address
(A23-A0) of 000000H. After which, the Manufacturer ID and the Device ID are shifted out on the falling edge of SCLK with
most significant bit (MSB) first as shown below. If the 24-bit address is initially set to 000001H, the Device ID will be read
first.
34
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
Figure 28. Read Manufacture ID/ Device ID Sequence Diagram
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
SCLK
Command
SI
24-bit address
90H
23 22 21
3
2
1
0
High-Z
SO
CS#
32
33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
SI
SO
7
6
Device ID
Manufacturer ID
5 4 3 2 1
0
MSB
7.24.
7
6
5
4
3
2
1
0
MSB
Dual I/O Read Manufacture ID/ Device ID (92H)
The Dual I/O Read Manufacturer/Device ID command is an alternative to the Release from Power-Down / Device ID
command that provides both the JEDEC assigned Manufacturer ID and the specific Device ID by dual I/O.
The command is initiated by driving the CS# pin low and shifting the command code “92H” followed by a 24-bit address
(A23-A0) of 000000H. After which, the Manufacturer ID and the Device ID are shifted out on the falling edge of SCLK with
most significant bit (MSB) first as shown in Figure29. If the 24-bit address is initially set to 000001H, the Device ID will be
read first.
Figure 29. Read Manufacture ID/ Device ID Dual I/O Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
7
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
Command
SI(IO0)
92H
SO(IO1)
A23-16
A15-8
A7-0
M7-0
CS#
SCLK
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SI(IO0)
6
SO(IO1)
7
4
2
0
6
4
2
0
6
5
3
1
7
5
3
1
7
MFR ID
Device ID
4
2
0
6
4
2
0
6
5
3
1
7
5
3
1
7
MFR ID
(Repeat)
35
Device ID
(Repeat)
4
2
0
6
4
2
0
5
3
1
7
5
3
1
MFR ID
(Repeat)
Device ID
(Repeat)
3.3V Uniform Sector
Dual and Quad Serial Flash
7.25.
GD25Q64C
Quad I/O Read Manufacture ID/ Device ID (94H)
The Quad I/O Read Manufacturer/Device ID command is an alternative to the Release from Power-Down / Device ID
command that provides both the JEDEC assigned Manufacturer ID and the specific Device ID by quad I/O.
The command is initiated by driving the CS# pin low and shifting the command code “94H” followed by a 24-bit address
(A23-A0) of 000000H, and 4 dummy clocks. After which, the Manufacturer ID and the Device ID are shifted out on the falling
edge of SCLK with most significant bit (MSB) first as shown in Figure30. If the 24-bit address is initially set to 000001H, the
Device ID will be read first.
Figure 30. Read Manufacture ID/ Device ID Quad I/O Sequence Diagram
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
4
0
4
0
4
0
4
0
4
0
4
0
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
SCLK
Command
SI(IO0)
94H
A23-16 A15-8 A7-0 M7-0
CS#
24 25 26 27 28 29 30 31
SCLK
SI(IO0)
4
0
4
0
4
0
4
0
SO(IO1)
5
1
5
1
5
1
5
1
WP#(IO2)
6
2
6
2
6
2
6
2
HOLD#(IO3) 7
3
7
3
7
3
7
3
MFR ID DID MFR ID DID
(Repeat)(Repeat)(Repeat)(Repeat)
36
Dummy
MFR ID DID
3.3V Uniform Sector
Dual and Quad Serial Flash
7.26.
GD25Q64C
Read Identification (RDID) (9FH)
The Read Identification (RDID) command allows the 8-bit manufacturer identification to be read, followed by two bytes of
device identification. The device identification indicates the memory type in the first byte, and the memory capacity of the
device in the second byte. The Read Identification (RDID) command while an Erase or Program cycle is in progress is not
decoded, and has no effect on the cycle that is in progress. The Read Identification (RDID) command should not be issued
while the device is in Deep Power-Down Mode.
The device is first selected by driving CS# low. Then, the 8-bit command code for the command is shifted in. This is followed
by the 24-bit device identification stored in the memory. Each bit is shifted out on the falling edge of Serial Clock. The
command sequence is shown in Figure31. The Read Identification (RDID) command is terminated by driving CS# high at
any time during data output. When CS# is driven high, the device is in the Standby Mode. Once in the Standby Mode, the
device waits to be selected, so that it can receive, decode and execute commands.
Figure 31. Read Identification ID Sequence Diagram
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
7
6
SCLK
SI
9FH
Command
SO
Manufacturer ID
5 4 3 2 1
MSB
CS#
16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31
SCLK
SI
SO
7
MSB
6
5 4 3 2 1
Memory Type
JDID15-JDID8
0
7
MSB
37
6
5 4 3 2
Capacity
JDID7-JDID0
1
0
0
3.3V Uniform Sector
Dual and Quad Serial Flash
7.27.
GD25Q64C
High Performance Mode (HPM) (A3H)
The High Performance Mode (HPM) command must be executed prior to Dual or Quad I/O commands when operating
at high frequencies (see fR and fC1 in AC Electrical Characteristics). This command allows pre-charging of internal
charge pumps so the voltages required for accessing the flash memory array are readily available. The command
sequence: CS# goes lowSending A3H command Sending 3-dummy byteCS# goes high. After the HPM
command is executed, the device will maintain a slightly higher standby current (Icc9) than standard SPI operation. The
Release from Power-Down or HPM command (ABH) can be used to return to standard SPI standby current (Icc1). In
addition, Power-Down command (B9H) will also release the device from HPM mode back to standard SPI standby state.
Figure 32. High Performance Mode Sequence Diagram
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Command
SI
t HPM
3 Dummy Bytes
A3H
23 22
MSB
2
1
0
SO
High Performance Mode
7.28.
Program/Erase Suspend (PES) (75H)
The Program/Erase Suspend command “75H”, allows the system to interrupt a page program or sector/block erase
operation and then read data from any other sector or block. The Write Status Register command (01H/31H/11H) and
Erase/Program Security Registers command (44H,42H) and Erase commands (20H, 52H, D8H, C7H, 60H) and Page Program
command (02H / 32H) are not allowed during Program suspend. The Write Status Register command (01H/31H/11H) and
Erase Security Registers command (44H) and Erase commands (20H, 52H, D8H, C7H, 60H) are not allowed during Erase
suspend. Program/Erase Suspend is valid only during the page program or sector/block erase operation. A maximum of
time of “tsus” (See AC Characteristics) is required to suspend the program/erase operation.
The Program/Erase Suspend command will be accepted by the device only if the SUS2/SUS1 bit in the Status Register
equal to 0 and WIP bit equal to 1 while a Page Program or a Sector or Block Erase operation is on-going. If the SUS2/SUS1
bit equal to 1 or WIP bit equal to 0, the Suspend command will be ignored by the device. The WIP bit will be cleared from 1
to 0 within “tsus” and the SUS2/SUS1 bit will be set from 0 to 1 immediately after Program/Erase Suspend. A power-off
during the suspend period will reset the device and release the suspend state. The command sequence is show below.
Figure 33. Program/Erase Suspend Sequence Diagram
CS#
SCLK
SI
SO
0
1
2
3
4
5
6
7
tSUS
Command
75H
High-Z
Accept read command
38
3.3V Uniform Sector
Dual and Quad Serial Flash
7.29.
GD25Q64C
Program/Erase Resume (PER) (7AH)
The Program/Erase Resume command must be written to resume the program or sector/block erase operation after a
Program/Erase Suspend command. The Program/Erase command will be accepted by the device only if the SUS2/SUS1
bit equal to 1 and the WIP bit equal to 0. After issued the SUS2/SUS1 bit in the status register will be cleared from 1 to 0
immediately, the WIP bit will be set from 0 to 1 within 200ns and the Sector or Block will complete the erase operation or
the page will complete the program operation. The Program/Erase Resume command will be ignored unless a
Program/Erase Suspend is active. The command sequence is show below.
Figure 34. Program/Erase Resume Sequence Diagram
CS#
SCLK
0
1
2
3
4
5
6
7
Command
SI
7AH
SO
7.30.
Resume Erase/Program
Erase Security Registers (44H)
The GD25Q64C provides three 1024-byte Security Registers which can be erased and programmed individually. These
registers may be used by the system manufacturers to store security and other important information separately from the
main memory array.
The Erase Security Registers command is similar to Sector/Block Erase command. A Write Enable (WREN) command must
previously have been executed to set the Write Enable Latch (WEL) bit.
The Erase Security Registers command sequence: CS# goes low sending Erase Security Registers command 3-byte
address on SI CS# goes high. The command sequence is shown below. CS# must be driven high after the eighth bit of
the last address byte has been latched in; otherwise the Erase Security Registers command is not executed. As soon as
CS# is driven high, the self-timed Erase Security Registers cycle (whose duration is tSE) is initiated. While the Erase Security
Registers cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The
Write in Progress (WIP) bit is 1 during the self-timed Erase Security Registers cycle, and is 0 when it is completed. At some
unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. The Security Registers Lock Bit
(LB3-1) in the Status Register can be used to OTP protect the security registers. Once the LB bit is set to 1, the Security
Register will be permanently locked; the Erase Security Registers command will be ignored.
Address
Security Register #1
Security Register #2
Security Register #3
A23-16
00H
00H
00H
A15-12
000x
0010
0011
39
A11-10
00
00
00
A9-0
Byte Address
Byte Address
Byte Address
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
Figure 35. Erase Security Registers command Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
7
8
9
Command
SI
7.31.
29 30 31
24 Bits Address
23 22
MSB
44H
2
1
0
Program Security Registers (42H)
The Program Security Registers command is similar to the Page Program command. Each security register contains four
pages content. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL)
bit before sending the Program Security Registers command. The Program Security Registers command is entered by
driving CS# Low, followed by the command code (42H), three address bytes and at least one data byte on SI. As soon as
CS# is driven high, the self-timed Program Security Registers cycle (whose duration is t PP) is initiated. While the Program
Security Registers cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP)
bit. The Write in Progress (WIP) bit is 1 during the self-timed Program Security Registers cycle, and is 0 when it is completed.
At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.
If the Security Registers Lock Bit (LB3-1) is set to 1, the Security Register will be permanently locked. Program Security
Registers command will be ignored.
Address
Security Register #1
Security Register #2
Security Register #3
A23-16
00H
00H
00H
A15-12
000x
0010
0011
A11-10
00
00
00
A9-0
Byte Address
Byte Address
Byte Address
Figure 36. Program Security Registers command Sequence Diagram
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
Command
24-bit address
23 22 21
3
2
Data Byte 1
1
0 7
MSB
6
5
4
3
2
1
8222
8223
6
8221
7
8219
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
8217
CS#
8216
MSB
8220
42H
8218
SI
1
0
SCLK
Data Byte 2
SI
7
MSB
6
5
4
3
2
Data Byte 1024
Data Byte 3
1
0 7
6
5
4
3
2
MSB
1
0
MSB
40
5
4
3
2
0
3.3V Uniform Sector
Dual and Quad Serial Flash
7.32.
GD25Q64C
Read Security Registers (48H)
The Read Security Registers command is similar to Fast Read command. The command is followed by a 3-byte address
(A23-A0) and a dummy byte, and each bit is latched-in on the rising edge of SCLK. Then the memory content, at that
address, is shifted out on SO, and each bit is shifted out, at a Max frequency fC, on the falling edge of SCLK. The first byte
addressed can be at any location. The address is automatically incremented to the next higher address after each byte of
data is shifted out. Once the A9-A0 address reaches the last byte of the register (Byte 3FFH), it will reset to 000H, the
command is completed by driving CS# high.
Address
Security Register #1
Security Register #2
Security Register #3
A23-16
00H
00H
00H
A15-12
000x
0010
0011
A11-10
00
00
00
A9-0
Byte Address
Byte Address
Byte Address
Figure 37. Read Security Registers command Sequence Diagram
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
SCLK
Command
SI
24-bit address
48H
23 22 21
3
2
1
0
High-Z
SO
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Dummy Byte
SI
SO
7
6
5
4
3
2
1
0
7 6
MSB
41
Data Out1
5 4 3 2
1
0
Data Out2
7 6 5
MSB
3.3V Uniform Sector
Dual and Quad Serial Flash
7.33.
GD25Q64C
Enable Reset (66H) and Reset (99H)
If the Reset command is accepted, any on-going internal operation will be terminated and the device will return to its default
power-on state and lose all the current volatile settings, such as Volatile Status Register bits, Write Enable Latch status
(WEL), Program/Erase Suspend status, Read Parameter setting (P7-P0), Continuous Read Mode bit setting (M7-M0) and
Wrap Bit Setting (W6-W4).
The “Reset (99H)” command sequence as follow: CS# goes low Sending Enable Reset command CS# goes high
CS# goes low Sending Reset command CS# goes high. Once the Reset command is accepted by the device, the
device will take approximately tRST_R to reset. During this period, no command will be accepted. Data corruption may happen
if there is an on-going or suspended internal Erase or Program operation when Reset command sequence is accepted by
the device. It is recommended to check the BUSY bit and the SUS bit in Status Register before issuing the Reset command
sequence.
Figure 38. Enable Reset and Reset command Sequence Diagram
CS#
0
SCLK
1
SI
2
3
4
5
6
7
0
2
3
4
5
Command
Command
66H
99H
6
7
High-Z
SO
7.34.
1
Read Serial Flash Discoverable Parameter (5AH)
The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional and
feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables can be
interrogated by host system software to enable adjustments needed to accommodate divergent features from multiple
vendors. The concept is similar to the one found in the Introduction of JEDEC Standard, JESD68 on CFI. SFDP is a standard
of JEDEC Standard No.216.
Figure 39. Read Serial Flash Discoverable Parameter command Sequence Diagram
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
SCLK
Command
SI
24-bit address
5AH
23 22 21
3
2
1
0
High-Z
SO
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Dummy Byte
SI
SO
7
6
5
4
3
2
1
0
7
MSB
42
Data Out1
6 5 4 3 2
1
Data Out2
0 7 6 5
MSB
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
Table3. Signature and Parameter Identification Data Values
Description
SFDP Signature
Comment
Fixed:50444653H
Add(H)
DW Add
Data
Data
(Byte)
(Bit)
00H
07:00
53H
53H
01H
15:08
46H
46H
02H
23:16
44H
44H
03H
31:24
50H
50H
SFDP Minor Revision Number
Start from 00H
04H
07:00
00H
00H
SFDP Major Revision Number
Start from 01H
05H
15:08
01H
01H
Number of Parameters Headers
Start from 00H
06H
23:16
01H
01H
Unused
Contains 0xFFH and can never be
07H
31:24
FFH
FFH
08H
07:00
00H
00H
Start from 0x00H
09H
15:08
00H
00H
Start from 0x01H
0AH
23:16
01H
01H
Parameter Table Length
How many DWORDs in the
0BH
31:24
09H
09H
(in double word)
Parameter table
Parameter Table Pointer (PTP)
First address of JEDEC Flash
0CH
07:00
30H
30H
Parameter table
0DH
15:08
00H
00H
0EH
23:16
00H
00H
0FH
31:24
FFH
FFH
10H
07:00
C8H
C8H
changed
ID number (JEDEC)
00H: It indicates a JEDEC specified
header
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
Unused
Contains 0xFFH and can never be
changed
ID Number
It is indicates GigaDevice
(GigaDevice Manufacturer ID)
manufacturer ID
Parameter Table Minor Revision
Start from 0x00H
11H
15:08
00H
00H
Start from 0x01H
12H
23:16
01H
01H
Parameter Table Length
How many DWORDs in the
13H
31:24
03H
03H
(in double word)
Parameter table
Parameter Table Pointer (PTP)
First address of GigaDevice Flash
14H
07:00
60H
60H
Parameter table
15H
15:08
00H
00H
16H
23:16
00H
00H
17H
31:24
FFH
FFH
Number
Parameter Table Major Revision
Number
Unused
Contains 0xFFH and can never be
changed
43
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
Table4. Parameter Table (0): JEDEC Flash Parameter Tables
Description
Comment
Add(H)
DW Add
(Byte)
(Bit)
Data
Data
00: Reserved; 01: 4KB erase;
Block/Sector Erase Size
10: Reserved;
01:00
01b
02
1b
03
0b
11: not support 4KB erase
Write Granularity
0: 1Byte, 1: 64Byte or larger
Write Enable Instruction
0: Nonvolatile status bit
Requested for Writing to Volatile
1: Volatile status bit
Status Registers
(BP status register bit)
30H
E5H
0: Use 50H Opcode,
Write Enable Opcode Select for
1: Use 06H Opcode,
Writing to Volatile Status
Note: If target flash status register is
Registers
Nonvolatile, then bits 3 and 4 must
04
0b
07:05
111b
15:08
20H
16
1b
18:17
00b
19
0b
be set to 00b.
Unused
Contains 111b and can never be
changed
4KB Erase Opcode
31H
(1-1-2) Fast Read
0=Not support, 1=Support
Address Bytes Number used in
00: 3Byte only, 01: 3 or 4Byte,
addressing flash array
10: 4Byte only, 11: Reserved
Double Transfer Rate (DTR)
clocking
0=Not support, 1=Support
32H
F1H
(1-2-2) Fast Read
0=Not support, 1=Support
20
1b
(1-4-4) Fast Read
0=Not support, 1=Support
21
1b
(1-1-4) Fast Read
0=Not support, 1=Support
22
1b
23
1b
33H
31:24
FFH
37H:34H
31:00
Unused
Unused
Flash Memory Density
(1-4-4) Fast Read Number of Wait
0 0000b: Wait states (Dummy
states
Clocks) not support
(1-4-4) Fast Read Number of
Mode Bits
39H
(1-1-4) Fast Read Number of Wait
0 0000b: Wait states (Dummy
states
Clocks) not support
Mode Bits
00100b
44H
07:05
010b
15:08
EBH
20:16
01000b
3AH
000b:Mode Bits not support
(1-1-4) Fast Read Opcode
3BH
44
FFH
03FFFFFFH
38H
(1-4-4) Fast Read Opcode
(1-1-4) Fast Read Number of
04:00
000b:Mode Bits not support
20H
EBH
08H
23:21
000b
31:24
6BH
6BH
3.3V Uniform Sector
Dual and Quad Serial Flash
Description
Comment
(1-1-2) Fast Read Number of Wait
0 0000b: Wait states (Dummy
states
Clocks) not support
(1-1-2) Fast Read Number
of Mode Bits
(Byte)
(Bit)
04:00
3DH
0 0000b: Wait states (Dummy
of Wait states
Clocks) not support
000b: Mode Bits not support
3FH
0=not support
Data
1=support
Unused
08H
07:05
000b
15:08
3BH
20:16
00010b
0=not support
1=support
Unused
3BH
42H
23:21
010b
31:24
BBH
00
0b
03:01
111b
04
0b
07:05
111b
40H
(4-4-4) Fast Read
Data
01000b
3EH
(1-2-2) Fast Read Opcode
(2-2-2) Fast Read
DW Add
000b: Mode Bits not support
(1-2-2) Fast Read Number
of Mode Bits
Add(H)
3CH
(1-1-2) Fast Read Opcode
(1-2-2) Fast Read Number
GD25Q64C
BBH
EEH
Unused
43H:41H
31:08
0xFFH
0xFFH
Unused
45H:44H
15:00
0xFFH
0xFFH
20:16
00000b
(2-2-2) Fast Read Number
0 0000b: Wait states (Dummy
of Wait states
Clocks) not support
(2-2-2) Fast Read Number
of Mode Bits
46H
000b: Mode Bits not support
(2-2-2) Fast Read Opcode
Unused
(4-4-4) Fast Read Number of Wait
0 0000b: Wait states (Dummy
states
Clocks) not support
(4-4-4) Fast Read Number
of Mode Bits
Sector/block size=2^N bytes
0x00b: this sector type don’t exist
Sector/block size=2^N bytes
0x00b: this sector type don’t exist
Sector Type 2 erase Opcode
Sector Type 3 Size
Sector/block size=2^N bytes
0x00b: this sector type don’t exist
Sector Type 3 erase Opcode
Sector Type 4 Size
000b
47H
31:24
FFH
FFH
49H:48H
15:00
0xFFH
0xFFH
20:16
00000b
000b: Mode Bits not support
Sector Type 1 erase Opcode
Sector Type 2 Size
23:21
4AH
(4-4-4) Fast Read Opcode
Sector Type 1 Size
00H
Sector/block size=2^N bytes
0x00b: this sector type don’t exist
Sector Type 4 erase Opcode
45
00H
23:21
000b
4BH
31:24
FFH
FFH
4CH
07:00
0CH
0CH
4DH
15:08
20H
20H
4EH
23:16
0FH
0FH
4FH
31:24
52H
52H
50H
07:00
10H
10H
51H
15:08
D8H
D8H
52H
23:16
00H
00H
53H
31:24
FFH
FFH
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
Table5. Parameter Table (1): GigaDevice Flash Parameter Tables
Description
Comment
Add(H)
DW Add
(Byte)
(Bit)
61H:60H
63H:62H
Data
Data
15:00
3600H
3600H
31:16
2700H
2700H
2000H=2.000V
Vcc Supply Maximum Voltage
2700H=2.700V
3600H=3.600V
1650H=1.650V
Vcc Supply Minimum Voltage
2250H=2.250V
2350H=2.350V
2700H=2.700V
HW Reset# pin
0=not support
1=support
00
0b
HW Hold# pin
0=not support
1=support
01
1b
Deep Power Down Mode
0=not support
1=support
02
1b
SW Reset
0=not support
1=support
03
1b
SW Reset Opcode
Should be issue Reset Enable(66H)
before Reset cmd.
65H:64H
11:04
1001 1001b
(99H)
F99EH
Program Suspend/Resume
0=not support
1=support
12
1b
Erase Suspend/Resume
0=not support
1=support
13
1b
14
1b
15
1b
66H
23:16
77H
77H
67H
31:24
64H
64H
00
0b
01
0b
09:02
FFH
10
0b
Unused
Wrap-Around Read mode
0=not support
1=support
Wrap-Around Read mode Opcode
08H:support 8B wrap-around read
Wrap-Around Read data length
16H:8B&16B
32H:8B&16B&32B
64H:8B&16B&32B&64B
Individual block lock
Individual block lock bit
(Volatile/Nonvolatile)
0=not support
0=Volatile
1=support
1=Nonvolatile
Individual block lock Opcode
Individual block lock Volatile
protect bit default protect status
0=protect
1=unprotect
EBFCH
6BH:68H
Secured OTP
0=not support
1=support
11
1b
Read Lock
0=not support
1=support
12
0b
Permanent Lock
0=not support
1=support
13
1b
Unused
15:14
11b
Unused
31:16
FFH
46
FFH
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
8. ELECTRICAL CHARACTERISTICS
8.1. POWER-ON TIMING
Figure 40. Power-on Timing Diagram
Vcc(max)
Chip Selection is not allowed
Vcc(min)
Device is fully
accessible
tVSL
VWI
Time
Table6. Power-Up Timing and Write Inhibit Threshold
Symbol
Parameter
tVSL
VCC(min) To CS# Low
VWI
Write Inhibit Voltage
Min
Max
Unit
5
ms
1.5
2.5
V
8.2. INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH). The Status Register
bits are set to 0, except DRV0 bit (S21) is set to 1.
8.3. ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Unit
Ambient Operating Temperature
-40 to 85
℃
Storage Temperature
-65 to 150
℃
Applied Input / Output Voltage
-0.6 to VCC+0.4
V
Transient Input / Output Voltage(note: overshoot)
-2.0 to VCC+2.0
V
-0.6 to 4.0
V
VCC
Figure 41. Maximum Negative/positive Overshoot Diagram
Maximum Negative Overshoot Waveform
20ns
Maximum Positive Overshoot Waveform
20ns
20ns
Vss
Vcc + 2.0V
Vss-2.0V
Vcc
20ns
20ns
47
20ns
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
8.4. CAPACITANCE MEASUREMENT CONDITIONS
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
CIN
Input Capacitance
6
pF
VIN=0V
COUT
Output Capacitance
8
pF
VOUT=0V
CL
Load Capacitance
30
Input Rise And Fall time
pF
5
ns
Input Pulse Voltage
0.1VCC to 0.8VCC
V
Input Timing Reference Voltage
0.2VCC to 0.7VCC
V
Output Timing Reference Voltage
0.5VCC
V
Figure 42. Input Test Waveform and Measurement Level
Input timing reference level
0.8VCC
0.7VCC
0.1VCC
0.2VCC
Output timing reference level
AC Measurement Level
Note: Input pulse rise and fall time are 50K & ≤100k cycles is 300ms.
2. Max Value 32KB tBE with≤50K cycles is 0.8s and >50K & ≤100k cycles is 1.6s.
3. Max Value 64KB tBE with≤50K cycles is 1.2s and >50K & ≤100k cycles is 2.0s.
51
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
Figure 43. Serial Input Timing
tSHSL
CS#
tCHSL
tSLCH
tCHSH
tSHCH
SCLK
tDVCH
SI
MSB
SO
High-Z
tCHCL
tCLCH
tCHDX
LSB
Figure 44. Output Timing
CS#
tCLH
SCLK
tCLQV
tCLQX
tCLQV
tCLL
tCLQX
SO
LSB
SI
Least significant address bit (LIB) in
Figure 45. Hold Timing
CS#
SCLK
SO
tCHHL
tHLCH
tCHHH
tHLQZ
HOLD#
SI do not care during HOLD operation.
52
tHHCH
tHHQX
tSHQZ
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
9. ORDERING INFORMATION
GD XX X XX X X X X X
Packing Type
T or no mark:Tube
Y:Tray
R:Tape & Reel
Green Code
G:Pb Free & Halogen Free Green Package
S: Pb Free & Halogen Free Green Package & SRP1
available
Temperature Range
I:Industrial(-40℃ to +85℃)
Package Type
F: SOP16 300mil
P: DIP8 300mil
S:SOP8 208mil
W: WSON8 (6*5mm)
Z:TFBGA24(6*4 Ball Array)
Q: USON8 (4*4mm, 0.45mm thickness)
Generation
A: A Version
B: B Version
C: C Version
Density
64: 64Mb
Series
Q:3V,4KB Uniform Sector
Product Family
25:SPI Interface Flash
53
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
9.1. Valid Part Numbers
Please contact Gigadevice regional sales for the latest product selection and available from factors.
Product Number
GD25Q64CFIG
Density
64Mbit
Package Type
SOP16 300mil
GD25Q64CPIG
64Mbit
DIP8 300mil
GD25Q64CSIG
64Mbit
SOP8 208mil
GD25Q64CWIG
64Mbit
WSON8 (6*5mm)
GD25Q64CZIG
64Mbit
TFBGA24 (6*4 ball array)
GD25Q64CQIG
64Mbit
USON8(4*4mm,0.45 thickness)
54
Temperature
-40℃ to +85℃
-40℃ to +85℃
-40℃ to +85℃
-40℃ to +85℃
-40℃ to +85℃
-40℃ to +85℃
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
10. PACKAGE INFORMATION
10.1.
Package SOP8 208MIL
θ
5
8
E
E1
L
L1
4
1
C
D
A2
A1
b
e
A
Dimensions
Symbol
A
A1
A2
b
C
D
E
E1
Min
0.05
1.70
0.31
0.18
5.13
7.70
5.18
Nom
0.15
1.80
0.41
0.21
5.23
7.90
5.28
0.25
1.91
0.51
0.25
5.33
8.10
Min
0.002
0.067
0.012
0.007
0.202
Nom
0.006
0.071
0.016
0.008
0.010
0.075
0.020
0.010
e
θ
L
L1
0.50
1.21
0
0.67
1.31
5
5.38
0.85
1.41
8
0.303
0.204
0.020
0.048
0
0.206
0.311
0.208
0.026
0.052
5
0.210
0.319
0.212
0.033
0.056
8
Unit
mm
Max
Inch
Max
2.16
0.085
Note：Both package length and width do not include mold flash.
55
1.27BSC
0.050BSC
3.3V Uniform Sector
Dual and Quad Serial Flash
10.2.
GD25Q64C
Package DIP8 300MIL
4
1
E
11°
E1
R0.005xDP0.020
11°
5°
C
5
eB
8
D
A2
L
A1
b
e
b1
Dimensions
Symbol
A1
A2
b
b1
C
D
E
E1
Min
0.38
3.00
1.27
0.38
0.20
9.05
7.62
6.12
Nom
0.72
3.25
1.46
0.46
0.28
9.32
7.94
6.38
Max
1.05
3.50
1.65
0.54
0.34
9.59
8.26
Min
0.015
0.118
0.05
0.015
0.008
0.356
Nom
0.028
0.128
0.058
0.018
0.011
Max
0.041
0.138
0.065
0.021
0.014
Unit
mm
Inch
eB
L
7.62
3.04
8.49
3.30
6.64
9.35
3.56
0.300
0.242
0.333
0.12
0.367
0.313
0.252
0.345
0.13
0.378
0.326
0.262
0.357
0.14
Note：Both package length and width do not include mold flash.
56
e
2.54
0.1
3.3V Uniform Sector
Dual and Quad Serial Flash
10.3.
GD25Q64C
Package WSON 8 (6*5mm)
D
A2
y
E
A
Top View
L
A1
Side View
D1
b
1
E1
e
Bottom View
Dimensions
Symbol
Unit
mm
Inch
A
A1
A2
b
D
D1
E
E1
Min
0.70
0.19
0.35
5.90
3.25
4.90
3.85
Nom
0.75
0.22
0.42
6.00
3.37
5.00
3.97
Max
0.80
0.25
0.48
6.10
3.50
5.10
Min
0.028
0.007
0.014
0.232
0.128
Nom
0.030
0.009
0.016
0.236
Max
0.032
0.010
0.019
0.240
0.05
0.002
e
y
L
0.00
0.50
0.04
0.60
4.10
0.08
0.75
0.193
0.151
0.000
0.020
0.133
0.197
0.156
0.001
0.024
0.138
0.201
0.161
0.003
0.030
1.27 BSC
0.05 BSC
Note:
1. Both package length and width do not include mold flash.
2. The exposed metal pad area on the bottom of the package is connected to device ground (GND pin),
so both Floating and connecting GND of exposed pad are also available.
57
3.3V Uniform Sector
Dual and Quad Serial Flash
10.4.
GD25Q64C
Package TFBGA-24BALL (6*4 ball array)
1
2
3
4
4
3
2
1
A
A
e
B
B
C
E1
E
C
SD
D
D
E
E
F
F
SE
e
D
Φb
A1
A
A2
D1
Dimensions
Symbol
D1
E
5.95
3.00
7.95
0.40
6.00
BSC
8.00
0.35
0.45
6.05
Min
0.010
0.014
0.234
0.118
0.313
Nom
0.012
0.016
0.236
BSC
0.315
0.018
0.238
Unit
A
Inch
0.30
Nom
Max
Max
A2
0.25
Min
mm
A1
1.20
0.047
0.014
0.85
0.033
b
D
0.35
e
SE
SD
5.00
1.00
0.50
0.50
BSC
BSC
TYP
TYP
0.197
0.039
0.020
0.020
BSC
BSC
TYP
TYP
8.05
0.317
Note：Both package length and width do not include mold flash.
58
E1
3.3V Uniform Sector
Dual and Quad Serial Flash
10.5.
GD25Q64C
Package SOP16 300MIL
θ
9
16
E1
E
L1
L
1
8
C
D
A
A2
A1
b
e
Dimensions
Symbol
A
A1
A2
Min
2.36
0.10
2.24
0.36
Nom
2.55
0.20
2.34
Max
2.75
0.30
Min
0.093
Nom
Max
Unit
mm
Inch
b
C
D
E
E1
0.20
10.10
10.10
7.42
0.41
0.25
10.30
10.35
7.52
2.44
0.51
0.30
10.50
10.60
0.004
0.088
0.014
0.008
0.397
0.100
0.008
0.092
0.016
0.010
0.108
0.012
0.096
0.020
0.012
e
L
L1
θ
0.40
1.31
0
0.84
1.44
5
7.60
1.27
1.57
8
0.397
0.292
0.016
0.052
0
0.405
0.407
0.296
0.033
0.057
5
0.413
0.417
0.299
0.050
0.062
8
Note: Both package length and width do not include mold flash.
59
1.27BSC
0.050BSC
3.3V Uniform Sector
Dual and Quad Serial Flash
10.6.
GD25Q64C
Package USON8 (4*4mm, 0.45mm thickness)
bb
C
b
ccc C
C
B
A
SEATING PLANE
D
M
1
PIN 1 CORNER
E
A1 M
A2
aaa C
A3
Top View
A
J
Side View
PIN 1 I.D CO.3
8
1
e/2
e
K
5
4
8Xb
8XL
EXPDSED DIE
ATTACH PAD
Bottom View
VIEW M-M
Dimensions
Symbol
A
A1
Min
0.40
0.00
Nom
0.45
---
Max
0.50
0.05
Min
0.015
0.000
Nom
0.017
Max
0.019
Unit
mm
Inch
A2
A3
b
D
E
0.25
0.25
3.90
3.90
0.30
0.30
4.00
4.00
0.15
0.35
0.35
4.10
4.10
REF
0.009
0.009
0.153
0.153
---
0.011
0.011
0.157
0.001
0.013
0.013
0.161
e
J
K
L
2.20
2.90
0.35
2.30
3.00
0.40
0.8
2.40
3.10
0.45
BSC
0.086
0.114
0.013
0.157
0.090
0.118
0.015
0.161
0.094
0.122
0.017
Note:
1. Both package length and width do not include mold flash.
2. The exposed metal pad area on the bottom of the package is connected to device ground (GND pin),
so both Floating and connecting GND of exposed pad are also available.
60
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q64C
11. REVISION HISTORY
Version No
1.0
1.1
1.2
Description
Initial Release
Date
2014-06-12
Modify ordering information
2015-02-10
Add note on STATUS REGISTER
Modify ELECTRICAL CHARACTERISTICS
2015-3-9
Modify DC CHARACTERISTICS:Icc9
1.3
Modify Package WSON 8 (6*5mm)
2015-6-12
Modify Package TFBGA-24BALL (6*4 ball array)
1.4
Modify Package SOP8 208MIL
2015-7-20
1.5
Modify Package TFBGA-24BALL (6*4 ball array)
2015-7-23
Modify AC CHARACTERISTICS: tCHCL Min.0.2 V/ns Change to 0.1 V/ns
1.6
tCLCH Min.0.2 V/ns Change to 0.1 V/ns ; Modify fR ;Add fC3;
Modify POWER-ON TIMING: tPUW Min 1ms Change to 5ms
2015-11-9
Modify Figure 40. Power-on Timing Sequence Diagram
1.7
Modify POWER-ON TIMING: tVSL Min 10us Change to 5ms
2015-12-16
1.8
Modify AC CHARACTERISTICS: add tRST_R & tRST_P & tRST_E
2015-12-18
1.9
Modify ORDERING INFORMATION
2016-1-4
2.0
Add Package USON8 (4*4mm)
2016-1-26
Modify Program Security Registers
Modify DC CHARACTERISTICS
2.1
Modify Figure 40. Power-on Timing Sequence Diagram
2016-2-17
Modify Power-on Timing: Delete tPUW
Modify Package WSON 8 (5*6mm)
2.2
Modify General Description
2016-5-18
2.3
Delete Data Retention and endurance
2016-6-20
Modify Write Enable for Volatile Status Register(50H)
Modify Chip Erase(CE)(60/C7H)
Modify Program/Erase Suspend(PES)(75H)
2.4
Modify Package WSON8 (6*5mm)
2016-7-21
Modify Features: Add Allows XIP(execute in place)operation
Modify TFBGA-24Ball（6*4 ball array）
Add Valid Part Numbers
61
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