SLG59M1470V

 SLG59M1470V 9.8 mΩ, Nanopower Mobile 6 A Load Switch with Discharge General Description Pin Configuration The SLG59M1470V is a 9.8 mΩ, 6 A single-channel load switch that is able to switch 0.85 V to 3.3 V power rails. The product is packaged in an ultra-small 1.5 x 2.0 mm package. ON 1 D 2 D 3 D 4 Features • 1.5 x 2.0 mm FC-TDFN 9L package (2 fused pins for drain and 2 fused pins for source) • Logic level ON pin capable of supporting 0.85 V CMOS Logic • Discharged Load when off • Fast Turn On time • Low RDSON while supporting 6 A • Pb-Free / Halogen-Free / RoHS compliant • Operating Temperature: -40 °C to 85 °C • Operating Voltage: 3.0 V to 5.25 V 9 SLG59M1470V VDD 8 GND 7 S 6 S 5 S 9-pin FC-TDFN (Top View) Applications • • • • Watch Power Rail Switching Tablet Power Rail Switching Smartphone Power Rail Switching Notebook Power Rail Switching Block Diagram 6.0 A @ 9.8 mΩ D S RDISCHRG 180 Ω VDD +3.0 V to 5.25 V ON Datasheet CFR0011-120-01 Input Circuit Revision 1.28 Page 1 of 12 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59M1470V 9.8 mΩ, Nanopower Mobile 6 A Load Switch with Discharge Pin Description Pin # Pin Name Type Pin Description 1 VDD PWR VDD power for load switch control (3.0 V to 5.25 V) 2 D MOSFET Drain of Power MOSFET 3 D MOSFET Drain of Power MOSFET (fused with pin 4) 4 D MOSFET Drain of Power MOSFET (fused with pin 3) 5 S MOSFET Source of Power MOSFET (fused with pin 6) 6 S MOSFET Source of Power MOSFET (fused with pin 5) 7 S MOSFET Source of Power MOSFET 8 GND GND Ground 9 ON Input Turns MOSFET ON (4 MΩ pull down resistor) CMOS input with ON_VIL < 0.2 V, ON_VIH > 0.85 V Ordering Information Part Number Type Production Flow SLG59M1470V FC-TDFN 9L Industrial, -40 °C to 85 °C SLG59M1470VTR FC-TDFN 9L (Tape and Reel) Industrial, -40 °C to 85 °C SLG59M1470V RDSON SLG5AP1471V 20 18 16 Rdson (mё) 14 12 10 8 6 4 2 0 1.5 2 2.5 3 3.5 4 Vdd - Vd (V) Datasheet CFR0011-120-01 Revision 1.28 Page 2 of 12 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59M1470V 9.8 mΩ, Nanopower Mobile 6 A Load Switch with Discharge Absolute Maximum Ratings Parameter VDD TS ESDHBM Description Conditions Min. Typ. Max. Unit -- -- 7 V -65 -- 150 °C 2000 -- -- V Power Supply Storage Temperature ESD Protection MSL Moisture Sensitivity Level WDIS Package Power Dissipation Human Body Model 1 MOSFET IDSPK Peak Current from Drain to Source For no more than 1 ms with 1% duty cycle -- -- 1.0 W -- -- 9 A Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Electrical Characteristics TA = -40 °C to 85 °C (unless otherwise noted) Parameter VDD IDD RDSON RDSON RDSON Description Power Supply Voltage Power Supply Current (PIN 1) ON Resistance ON Resistance ON Resistance MOSFET IDS Current from D to S VD Datasheet CFR0011-120-01 Conditions -40 °C to 85 °C 1 Min. Typ. Max. Unit 3.0 -- 5.25 V when OFF, TA = 25 °C -- 30 60 nA when ON, No load, ON = VDD, TA = 25 °C -- 35 70 nA when OFF, TA = 70 °C -- 100 900 nA when ON, No load, ON = VDD, TA = 70 °C -- 200 900 nA TA = 25 °C; IDS = 300 mA, VDD - VD = 1.5 V -- 16.2 18.6 mΩ TA = 25 °C; IDS = 300 mA, VDD - VD = 2.0 V -- 11.5 13.2 mΩ TA = 25 °C; IDS = 300 mA, VDD - VD = 2.5 V -- 9.5 10.9 mΩ TA = 25 °C; IDS = 300 mA, VDD - VD = 3.0 V -- 8.5 9.8 mΩ TA = 25 °C; IDS = 300 mA, VDD - VD = 3.5 V -- 7.9 9.1 mΩ TA = 25 °C; IDS = 300 mA, VDD - VD = 4.0 V -- 7.4 8.5 mΩ TA = 70 °C; IDS = 300 mA, VDD - VD = 1.5 V -- 19.2 22.1 mΩ TA = 70 °C; IDS = 300 mA, VDD - VD = 2.0 V -- 14.1 16.2 mΩ TA = 70 °C; IDS = 300 mA, VDD - VD = 2.5 V -- 11.7 13.5 mΩ TA = 70 °C; IDS = 300 mA, VDD - VD = 3.0 V -- 10.5 12.1 mΩ TA = 70 °C; IDS = 300 mA, VDD - VD = 3.5 V -- 9.7 11.2 mΩ TA = 70 °C; IDS = 300 mA, VDD - VD = 4.0 V -- 9.2 10.6 mΩ TA = 85 °C; IDS = 300 mA, VDD - VD = 1.5 V -- 24.96 28.73 mΩ TA = 85 °C; IDS = 300 mA, VDD - VD = 2.0 V -- 18.33 21.06 mΩ TA = 85 °C; IDS = 300 mA, VDD - VD = 2.5 V -- 15.21 17.55 mΩ TA = 85 °C; IDS = 300 mA, VDD - VD = 3.0 V -- 13.65 15.73 mΩ TA = 85 °C; IDS = 300 mA, VDD - VD = 3.5 V -- 12.61 14.56 mΩ TA = 85 °C; IDS = 300 mA, VDD - VD = 4.0 V -- 11.96 13.78 mΩ Continuous -- -- 6 A -- VDD - 1.5 V Drain Voltage 0.85 Revision 1.28 Page 3 of 12 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59M1470V 9.8 mΩ, Nanopower Mobile 6 A Load Switch with Discharge Electrical Characteristics (continued) TA = -40 °C to 85 °C (unless otherwise noted) Parameter Description Min. Typ. Max. Unit 50% ON to 90% VS, VDD = 5.25 V, VD = 1.0 V, CLOAD = 10 µF, RLOAD = 20 Ω 7 9 12 µs 50% ON to 90% VS, VDD = 5.25 V, VD = 1.0 V, CLOAD = 2 µF, RLOAD = 20 Ω 8 10 12 µs 50% ON to 90% VS, VDD = 5 V, VD = 1.0 V, CLOAD = 2 x (50 µF + 2.2 µH Inductor) 2 30 42 50 µs 10% VS to 90% VS, VDD = 5.25 V, VD = 1.0 V, CLOAD = 10 µF, RLOAD = 20 Ω 130 160 190 V/ms 10% VS to 90% VS, VDD = 5.25 V, VD = 1.0 V, CLOAD = 2 µF, RLOAD = 20 Ω 150 176 200 V/ms 10% VS to 90% VS, VDD = 5 V, VD = 1.0 V, RLOAD = 20 Ω, CLOAD = 2 x (50 µF + 2.2 µH Inductor) 2 20 26 35 V/ms CLOAD connected from S to GND -- -- 10 µF Discharge Resistance 100 180 300 Ω ON_VIH High Input Voltage on ON pin 0.85 -- VDD V ON_VIL Low Input Voltage on ON pin TTotal_ON Conditions Total Turn On Time VS(SR) VS Slew Rate CLOAD Output Load Capacitance RDISCHRG TOFF_Delay TFALL -0.3 0 0.2 V OFF Delay Time 50% ON to VS Fall Start ↓, VDD = 5.25 V, VD = 1.0 V, RLOAD = 20 Ω, no CLOAD -- -- 60 µs VS Fall Time 90% VS to 10% VS, VDD = 5.25 V, VD = 1.0 V, RLOAD = 20 Ω, no CLOAD -- 15 -- µs Notes: 1. Guaranteed by design and characterization 2. See Application Diagram below regarding CLOAD = 2 x (50 µF + 2.2 µH). Application Diagram (Source loading > 10 µF) 2.2 µH S S S 1 µF 50 µF 2.2 µH 50 µF Capacitive loads > 10 µF directly on the S pin may result in nonlinear output ramping. In cases where > 10 µF load capacitance is required, we recommend decoupling the load(s) with 2.2 µH inductors while putting a 1 µF capacitor on S as shown above in order to guarantee linear ramping and inrush current limiting. Datasheet CFR0011-120-01 Revision 1.28 Page 4 of 12 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59M1470V 9.8 mΩ, Nanopower Mobile 6 A Load Switch with Discharge TTotal_ON, TON_Delay and Slew Rate Measurement ON* 50% ON 50% ON TOFF_Delay 90% VS VS 90% VS TON_Delay 10% VS 10% VS VS(SR) (V/ms) TFALL TTotal_ON *Rise and Fall Times of the ON Signal are 100 ns Datasheet CFR0011-120-01 Revision 1.28 Page 5 of 12 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59M1470V 9.8 mΩ, Nanopower Mobile 6 A Load Switch with Discharge Layout Guidelines: 1. The VDD pin needs a 0.1 µF and 10 µF external capacitors to smooth pulses from the power supply. Locate these capacitors as close as possible to the SLG59M1470V's PIN1. 2. Since the D and S pins dissipate most of the heat generated during high-load current operation, it is highly recommended to make power traces as short, direct, and wide as possible. A good practice is to make power traces with absolute minimum widths of 15 mils (0.381 mm) per Ampere. A representative layout, shown in Figure 1, illustrates proper techniques for heat to transfer as efficiently as possible out of the device; 3. To minimize the effects of parasitic trace inductance on normal operation, it is recommended to connect input CIN and output CLOAD low-ESR capacitors as close as possible to the SLG59M1470V's D and S pins; 4. The GND pin should be connected to system analog or power ground plane. 5. 2 oz. copper is recommended for high current operation. SLG59M1470V Evaluation Board: А GreenFET Evaluation Board for SLG59M1470V is designed according to the statements above and is illustrated on Figure 1. Please note that evaluation board has D_Sense and S_Sense pads. They cannot carry high currents and dedicated only for RDSON evaluation. Please solder your SLG59M1470V here Figure 1. SLG59M1470V Evaluation Board Datasheet CFR0011-120-01 Revision 1.28 Page 6 of 12 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59M1470V 9.8 mΩ, Nanopower Mobile 6 A Load Switch with Discharge 1 1 VDD C2 1 2 3 4 5 VDD CAP2 GND CAP1 ON1 S2 ON2 S1 D1 D2 C1 10 9 8 7 6 CAP/RILIM ON D_Sense1 1 1 2 3 1 2 3 4 U1 VDD ON D D C3 C4 R_Array 1 3 5 7 9 8 7 6 5 GND PG S S 1 3 5 7 9 S_Sense1 1 C5 R1 C6 2 4 6 8 10 R2 R3 R4 C7 100n 2 4 6 8 10 9 1 2 3 4 D_Sense2 1 U2 ON VDD D D D 8 7 6 5 GND CAP S S S_Sense2 1 C8 100n 1 2 3 4 D_Sense3 1 U3 ON VDD D D 8 7 6 5 GND CAP S S S_Sense3 1 C9 100n 9 1 2 3 4 D_Sense4 1 1 2 3 4 D_Sense5 1 1 2 D_Sense6 1 U4 ON VDD D D D 8 7 6 5 GND S S S U5 ON VIN VIN VIN U6 ON D 8 7 6 5 GND VOUT VOUT VOUT GND S S_Sense4 1 S_Sense5 1 4 3 D/VIN D/VIN 1 1 1 1 S_Sense6 1 S/VOUT S/VOUT Figure 2. SLG59M1470V Evaluation Board Connection Circuit Datasheet CFR0011-120-01 Revision 1.28 Page 7 of 12 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59M1470V 9.8 mΩ, Nanopower Mobile 6 A Load Switch with Discharge Basic Test Setup and Connections Figure 3. SLG59M1470V Evaluation Board Connection Circuit EVB Configuration 1. Connect oscilloscope probes to D/VIN, S/VOUT, ON, etc.; 2. Turn on Power Supply 1 and set desired VDD from 3 V…5.25 V range; 3. Turn on Power Supply 2 and set desired VD from 0.85 V…VDD - 1.5 V range; 4. Toggle the ON signal High or Low to observe SLG59M1470V operation. SLG59M1470V Layout Suggestion 2300 700 210 800 800 9 1 Exposed Pad 210 Recommended Land Pattern 1410 190 8 610 Unit: µm 1000 Datasheet CFR0011-120-01 Revision 1.28 Page 8 of 12 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59M1470V 9.8 mΩ, Nanopower Mobile 6 A Load Switch with Discharge Package Top Marking System Definition Date Code + Revision Pin 1 Identifier JZA DDR LL Part Code + Assembly Site Lot Traceability JZ - Part Code1 A - Assembly Site Code Field2 DD - Date Code Field1 R - Part Revision Code Field2 LL - Lot Traceability Field1 Note 1: Each character in code field can be alphanumeric A-Z and 0-9 Note 2: Character in code field can be alphabetic A-Z Datasheet CFR0011-120-01 Revision 1.28 Page 9 of 12 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59M1470V 9.8 mΩ, Nanopower Mobile 6 A Load Switch with Discharge Package Drawing and Dimensions 9 Lead TDFN FC Package 1.5 x 2.0 mm (Fused Lead) JEDEC MO-252, Variation W2015D Datasheet CFR0011-120-01 Revision 1.28 Page 10 of 12 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59M1470V 9.8 mΩ, Nanopower Mobile 6 A Load Switch with Discharge Tape and Reel Specifications Max Units Leader (min) Nominal Reel & Package # of Package Size Hub Size Length Type Pins per Reel per Box Pockets [mm] [mm] [mm] TDFN 9L FC Green 9 1.5 x 2.0 x 0.75 3000 3000 178 / 60 100 400 Trailer (min) Pockets Length [mm] Tape Width [mm] 100 400 8 Part Pitch [mm] 4 Carrier Tape Drawing and Dimensions Package Type Pocket BTM Pocket BTM Length Width TDFN 9L FC Green Pocket Depth Index Hole Pitch Pocket Pitch Index Hole Diameter Index Hole Index Hole to Tape to Pocket Tape Width Edge Center A0 B0 K0 P0 P1 D0 E F W 1.68 2.18 0.9 4 4 1.5 1.75 3.5 8 P0 D0 E Y W F Section Y-Y B0 CL K0 Y P1 A0 Refer to EIA-481 specification Recommended Reflow Soldering Profile Please see IPC/JEDEC J-STD-020: latest revision for reflow profile based on package volume of 2.25 mm3 (nominal). More information can be found at www.jedec.org. Datasheet CFR0011-120-01 Revision 1.28 Page 11 of 12 2-Feb-2022 ©2022 Renesas Electronics Corporation  SLG59M1470V 9.8 mΩ, Nanopower Mobile 6 A Load Switch with Discharge Revision History Date Version 2/2/2022 1.28 Updated Company name and logo Fixed typos 1/29/2019 1.27 Updated style and formatting Added Layout Guidelines Fixed typos 10/5/2016 1.26 Updated TTotal_ON, VOUT(SR), TOFF_Delay, TFALL specs Updated Application Diagram Notes Updated Formating and Parameter Names for clarity 4/26/2016 1.25 Added MSL 1 Added Part Code Marking Information 9/04/2015 1.24 Fixed TA conditions in Electrical Characteristics Datasheet CFR0011-120-01 Change Revision 1.28 Page 12 of 12 2-Feb-2022 ©2022 Renesas Electronics Corporation IMPORTANT NOTICE AND DISCLAIMER RENESAS ELECTRONICS CORPORATION AND ITS SUBSIDIARIES (“RENESAS”) PROVIDES TECHNICAL SPECIFICATIONS AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS OR IMPLIED, INCLUDING, WITHOUT LIMITATION, ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. 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