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SLG5NT1533V

SLG5NT1533V

  • 厂商:

    DIALOGSEMICONDUCTOR(戴乐格)

  • 封装:

    UFDFN8

  • 描述:

    IC PWR SWITCH N-CHANNEL 1:1 8DFN

  • 数据手册
  • 价格&库存
SLG5NT1533V 数据手册
 SLG5NT1533V 20 mΩ, Fast Turn On, 2.5 A Load Switch with Discharge General Description Pin Configuration Features • 1.0 x 1.6 x 0.55 mm FC-STDFN package (2 fused pins for drain and 2 fused pins for source) • Logic level ON pin capable of supporting 0.85 V CMOS Logic • Discharged Load when off • Fast Turn On time • 32 μs, CSLEW = 0.1 nF, CLOAD = 1 μF, IDS = 100 mA • 102 μs, CSLEW = 0.5 nF, CLOAD = 10 μF, IDS = 2.5 A • Low RDSON while supporting 2.5 A • 20 mΩ, VDD = 5 V, VD = 1 V • 27.5 mΩ, VDD = 3.3 V, VD = 1 V • Pb-Free / Halogen-Free / RoHS compliant • Operating Temperature: -40 °C to 85°C • Operating Voltage: 2.5 V to 5.5 V • Power Rail Switching VD = 0.85 V to VD = VDD - 1.5 V VDD 1 ON 2 D 3 D 4 SLG5NT1533V The SLG5NT1533V is a 20 mΩ 2.5 A single-channel load switch with configurable slew rate control. The device can enable fast power rail turn on with big cap loading. Internal circuit limits max inrush current to prevent device damage. The product is packaged in an ultra-small 1.0 x 1.6 mm package. 8 GND 7 CAP 6 S 5 S 8-pin FC-STDFN (Top View) Applications • Fast Turn On/Off power rail switching with big load capacitance • Frequent wake & sleep power cycle • Mobile devices and portable devices Block Diagram 2.5 A @ 20 mΩ D S CIN CLOAD VDD +2.5 V to 5.5 V CSLEW ON Datasheet CFR0011-120-01 Input Circuit Revision 1.07 Page 1 of 15 3-Feb-2022 ©2022 Renesas Electronics Corporation  SLG5NT1533V 20 mΩ, Fast Turn On, 2.5 A Load Switch with Discharge Pin Description Pin # Pin Name Type Pin Description 1 VDD PWR VDD supplies the power for the operation of the load switch and internal control circuitry. Bypass the VDD pin to GND with a 0.1 µF (or larger) capacitor. 2 ON Input A low-to-high transition on this pin initiates the operation of the SLG5NT1533V’s state machine. ON is a CMOS input with ON_VIL < 0.3 V and ON_VIH > 0.85 V thresholds. While there is an internal pull-down circuit to GND (~4 MΩ), connect this pin directly to a general-purpose output (GPO) of a microcontroller, an application processor, or a system controller. 3, 4 D MOSFET Drain terminal connection of the n-channel MOSFET (2 pins fused for VD). Connect at least a low-ESR 0.1 µF capacitor from this pin to ground. Capacitors used at VD should be rated at 10 V or higher. 5, 6 S MOSFET Source terminal connection of the n-channel MOSFET (2 pins fused for VS). Connect a low-ESR capacitor from this pin to ground and consult the Electrical Characteristics table for recommended CLOAD range. Capacitors used at VS should be rated at 10 V or higher. 7 CAP Input A low-ESR, stable dielectric, ceramic surface-mount capacitor connected from CAP pin to GND sets the VS slew rate and overall turn-on time of the SLG5NT1533V. Capacitors at CAP pin should be rated at 10 V or higher. 8 GND GND Ground connection. Connect this pin to system analog or power ground plane. Ordering Information Part Number Type Production Flow SLG5NT1533V FC-STDFN 8L Industrial, -40 °C to 85 °C SLG5NT1533VTR FC-STDFN 8L (Tape and Reel) Industrial, -40 °C to 85 °C Datasheet CFR0011-120-01 Revision 1.07 Page 2 of 15 3-Feb-2022 ©2022 Renesas Electronics Corporation  SLG5NT1533V 20 mΩ, Fast Turn On, 2.5 A Load Switch with Discharge Absolute Maximum Ratings Parameter VDD Description Conditions Min. Typ. Max. Unit -- -- 7 V Power Supply VD to GND Load Switch Input Voltage to GND -0.3 -- VDD V VS to GND Load Switch Output Voltage to GND -0.3 -- VD V -0.3 -- VDD V ON and CAP to ON and CAP Pin Voltages to GND GND TS Storage Temperature -65 -- 150 °C TJ Junction Temperature -- -- 150 °C 2000 -- -- V -- °C/W ESDHBM MSL θJA WDIS ESD Protection Human Body Model Moisture Sensitivity Level Thermal Resistance 1 1.6 x 1 mm, 8L STDFN; Determined using 1 in2, 1 oz. copper pads under each VD and VS terminals and FR4 pcb material Package Power Dissipation -- 75 -- -- 0.4 W For no more than 20 μs with 1% duty cycle -- -- 25.0 A MOSFET IDSPK Peak Current from Drain to Source For no more than 50 μs with 1% duty cycle -- -- 12.5 A For no more than 1 ms with 1% duty cycle -- -- 3.5 A Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Electrical Characteristics TA = -40 °C to 85 °C. Typical values are at TA = 25 °C unless otherwise noted. Parameter VDD IDD Description Power Supply Voltage Power Supply Current (PIN 1) ON Resistance, TA = 25°C RDSON ON Resistance, TA = 70°C ON Resistance, TA = 85°C MOSFET IDS Current from D to S VD Datasheet CFR0011-120-01 Conditions -40 °C to 85 °C Min. Typ. Max. Unit 2.5 -- 5.5 V when OFF -- -- 1 μA when ON, No load -- -- 10 μA VDD = 5 V, VD = 1.0 V, VDD - VD = 4.0 V, RLOAD = 0.5 Ω -- 20 24 mΩ VDD = 3.3 V, VD = 1.0 V, VDD - VD = 2.3 V, RLOAD = 0.5 Ω -- 27.5 31 mΩ VDD = 5 V, VD = 1.0 V, VDD - VD = 4.0 V, RLOAD = 0.5 Ω -- 23.5 27 mΩ VDD = 3.3 V, VD = 1.0 V, VDD - VD = 2.3 V, RLOAD = 0.5 Ω -- 31 35 mΩ VDD = 5 V, VD = 1.0 V, VDD - VD = 4.0 V, RLOAD = 0.5 Ω -- 24.5 28 mΩ VDD = 3.3 V, VD = 1.0 V, VDD - VD = 2.3 V, RLOAD = 0.5 Ω -- 33 37 mΩ Continuous, VD = 0.85 V to 3.3 V -- -- 2.5 A 0.85 -- VDD - 1.5 V Drain Voltage Revision 1.07 Page 3 of 15 3-Feb-2022 ©2022 Renesas Electronics Corporation  SLG5NT1533V 20 mΩ, Fast Turn On, 2.5 A Load Switch with Discharge Electrical Characteristics (continued) TA = -40 °C to 85 °C. Typical values are at TA = 25 °C unless otherwise noted. Parameter TON_Delay Description ON Delay Time Min. Typ. Max. Unit 50% ON to 10% VS, VDD = 5 V, VD = 1.0 V, CSLEW = 0.1 nF Conditions -- 12 15 μs 50% ON to 10% VS, VDD = 5 V, VD = 1.0 V, CSLEW = 0.5 nF -- 32 35 μs 50% ON to 90% VS TTotal_ON Total Turn On Time CLOAD RDISCHRGE Slew Rate Output Load Capacitance μs 50% ON to 90% VS, VDD = 5 V, VD = 1.0 V, CLOAD = 1 μF, IDS = 50 mA, CSLEW = 0.1 nF -- 32 39 μs 50% ON to 90% VS, VDD = 5 V, VD = 1.0 V, CLOAD = 1 μF, IDS = 100 mA, CSLEW = 0.1 nF -- 32 39 μs 50% ON to 90% VS, VDD = 5 V, VD = 1.0 V, CLOAD = 4.7 μF, IDS = 2.5 A, CSLEW = 0.5 nF -- 102 123 μs 50% ON to 90% VS, VDD = 5 V, VD = 1.0 V, CLOAD = 10 μF, IDS = 2.5 A, CSLEW = 0.5 nF -- 102 123 μs 10% VS to 90% VS VS(SR) Set by External CSLEW1 Set by External CSLEW1 V/ms 10% VS to 90% VS, VDD = 5 V, VD = 1.0 V, CLOAD = 1 μF, IDS = 50 mA, CSLEW = 0.1 nF -- 65 78 V/ms 10% VS to 90% VS, VDD = 5 V, VD = 1.0 V, CLOAD = 1 μF, IDS = 100 mA, CSLEW = 0.1 nF -- 65 78 V/ms 10% VS to 90% VS, VDD = 5 V, VD = 1.0 V, CLOAD = 4.7 μF, IDS = 2.5 A, CSLEW = 0.5 nF -- 13 16 V/ms 10% VS to 90% VS, VDD = 5 V, VD = 1.0 V, CLOAD = 10 μF, IDS = 2.5 A, CSLEW = 0.5 nF -- 13.5 16.5 V/ms CLOAD connected from S to GND -- -- 10 μF Discharge Resistance 100 150 300 Ω ON_VIH High Input Voltage on ON pin 0.85 -- VDD V ON_VIL Low Input Voltage on ON pin -0.3 0 0.3 V TOFF_Delay OFF Delay Time 50% ON to VS Fall Start, no CLOAD, RLOAD = 20 Ω, VDD = 5 V, VD = 1.0 V, No CSLEW -- 120 150 μs THERMOFF Thermal shutoff turn-off temperature Programmable, automatic shutoff temperature -- 125 -- °C -- -- ±20 % -- -- 100 μs THERMOFFACC Thermal Sensor Accuracy THERMDT Thermal Disable Time Thermal sensor disable for the ON rising edge to 100 μs. Prevent thermal shutdown from inrush current Notes: 1. Refer to typical timing parameter vs. CSLEW performance charts for additional information when available. Datasheet CFR0011-120-01 Revision 1.07 Page 4 of 15 3-Feb-2022 ©2022 Renesas Electronics Corporation  SLG5NT1533V 20 mΩ, Fast Turn On, 2.5 A Load Switch with Discharge TON_Delay, VS(SR), and TTotal_ON Timing Details ON* 50% ON 50% ON TOFF_Delay 90% VS VS 90% VS TON_Delay 10% VS 10% VS VS(SR) (V/ms) TFALL TTotal_ON Note: * Rise and Fall times of the ON signal are 100 ns Datasheet CFR0011-120-01 Revision 1.07 Page 5 of 15 3-Feb-2022 ©2022 Renesas Electronics Corporation  SLG5NT1533V 20 mΩ, Fast Turn On, 2.5 A Load Switch with Discharge Typical Performance Characteristics RDSON vs. Temperature and VDD - VD RDSON vs. VDD - VD Datasheet CFR0011-120-01 Revision 1.07 Page 6 of 15 3-Feb-2022 ©2022 Renesas Electronics Corporation  SLG5NT1533V 20 mΩ, Fast Turn On, 2.5 A Load Switch with Discharge VS Slew Rate vs. CSLEW TTotal_ON vs. CSLEW Datasheet CFR0011-120-01 Revision 1.07 Page 7 of 15 3-Feb-2022 ©2022 Renesas Electronics Corporation  SLG5NT1533V 20 mΩ, Fast Turn On, 2.5 A Load Switch with Discharge SLG5NT1533V Power-Up/Power-Down Sequence Considerations A nominal power-up sequence is to apply VDD first, followed by VD only after VDD is > 90 % of final VDD, and finally toggling the ON pin LOW-to-HIGH after VD is at least 90% of its final value. A nominal power-down sequence is the power-up sequence in reverse order. If VDD and VD are applied at the same time, a voltage glitch may appear on the output pin at VS. To prevent glitches at the output, it is recommended to connect at least a 1 μF capacitor from the S pin to GND and to keep the VDD and VD ramp times higher than 2 ms. If the ON pin is toggled HIGH before VDD and VD have reached their steady-state values the load switch timing parameters may differ from datasheet specifications. Power Dissipation The junction temperature of the SLG5NT1533V depends on different factors such as board layout, ambient temperature, and other environmental factors. The primary contributor to the increase in the junction temperature of the SLG5NT1533V is the power dissipation of its power MOSFET. Its power dissipation and the junction temperature in nominal operating mode can be calculated using the following equations: PD = (RDSON x IDS2) + (VDD x IDD) where: PD = Power dissipation, in Watts (W) RDSON = Power MOSFET ON resistance, in Ohms (Ω) IDS = Output current, in Amps (A) VDD = Power supply voltage applied to the SLG5NT1533V, in Volts (V) IDD = Power supply current of the SLG5NT1533V at VDD, in Amps (A) and TJ = PD x θJA + TA where: TJ = Junction temperature, in Celsius degrees (°C) θJA = Package thermal resistance, in Celsius degrees per Watt (°C/W) = 75 °C/W for the SLG5NT1533V’s STDFN package. TA = Ambient temperature, in Celsius degrees (°C) For more information on GreenFET load switch features, please visit our website and see App Note “AN-1068 GreenFET and High Voltage GreenFET Load Switch Basics”. Datasheet CFR0011-120-01 Revision 1.07 Page 8 of 15 3-Feb-2022 ©2022 Renesas Electronics Corporation  SLG5NT1533V 20 mΩ, Fast Turn On, 2.5 A Load Switch with Discharge Layout Guidelines: 1. The VDD pin needs a 0.1µF (or larger) external capacitor to smooth pulses from the power supply. Locate this capacitor as close as possible to the SLG5NT1533V's pin 1. 2.Since the D and S pins dissipate most of the heat generated during high-load current operation, it is highly recommended to make power traces as short, direct, and wide as possible. A good practice is to make power traces with absolute minimum widths of 15 mils (0.381 mm) per Ampere. A representative layout, shown in Figure 1, illustrates proper techniques for heat to transfer as efficiently as possible out of the device; 3.To minimize the effects of parasitic trace inductance on normal operation, it is recommended to connect input CIN and output CLOAD low-ESR capacitors as close as possible to the SLG5NT1533V's D and S pins; 4.The GND pin should be connected to system analog or power ground plane. 5. 2 oz. copper is recommended for high current operation. SLG5NT1533V Evaluation Board: А GFET3 Evaluation Board for SLG5NT1533V is designed according to the statements above and is illustrated on Figure 1. Please note that evaluation board has D_Sense and S_Sense pads. They cannot carry high currents and dedicated only for RDSON evaluation. Please solder your SLG5NT1533V here Figure 1. SLG5NT1533V Evaluation Board Datasheet CFR0011-120-01 Revision 1.07 Page 9 of 15 3-Feb-2022 ©2022 Renesas Electronics Corporation  SLG5NT1533V 20 mΩ, Fast Turn On, 2.5 A Load Switch with Discharge 1 1 VDD C2 1 2 3 4 5 VDD CAP2 GND CAP1 ON1 S2 ON2 S1 D1 D2 C1 10 9 8 7 6 CAP/RILIM ON U1 1 2 3 D_Sense1 1 2 3 4 1 VDD ON D D C3 C4 1 3 5 7 9 S_Sense1 1 C5 C6 R1 2 4 6 8 10 R2 R3 R4 C7 1 00 n R_Array 1 3 5 7 9 8 7 6 5 GND CAP S S 2 4 6 8 10 U2 9 1 2 3 4 D_Sense2 ON VDD D D D 8 7 6 5 GND CAP S S S_Sense2 1 1 C8 1 00 n U3 1 2 3 4 D_Sense3 ON VDD D D 8 7 6 5 GND CAP S S S_Sense3 1 1 C9 1 00 n U4 9 1 2 3 4 D_Sense4 1 ON VDD D D D 8 7 6 5 GND S S S S_Sense4 1 U5 1 2 3 4 D_Sense5 1 ON VIN VIN VIN 8 7 6 5 GND VOUT VOUT VOUT S_Sense5 1 U6 1 2 ON D GN D S 4 3 D_Sense6 1 1 1 D/VIN D/VIN 1 S_Sense6 1 1 S/VOUT S/VOUT Figure 2. SLG5NT1533V Evaluation Board Connection Circuit Datasheet CFR0011-120-01 Revision 1.07 Page 10 of 15 3-Feb-2022 ©2022 Renesas Electronics Corporation  SLG5NT1533V 20 mΩ, Fast Turn On, 2.5 A Load Switch with Discharge Basic Test Setup and Connections Figure 3. SLG5NT1533V Evaluation Board Connection Circuit EVB Configuration 1. Connect oscilloscope probes to D/VIN, S/VOUT, ON, etc.; 2. Turn on Power Supply 1 and set desired VDD from 2.5 V…5.5 V range; 3. Turn on Power Supply 2 and set desired VD from 0.85 V…VDD - 1.5 V range; 4 .Toggle the ON signal High or Low to observe SLG5NT1533V operation. Datasheet CFR0011-120-01 Revision 1.07 Page 11 of 15 3-Feb-2022 ©2022 Renesas Electronics Corporation  SLG5NT1533V 20 mΩ, Fast Turn On, 2.5 A Load Switch with Discharge Package Top Marking System Definition ABC Serial Number Pin 1 Identifier Each character in Serial Number field can be alphanumeric A-Z Datasheet CFR0011-120-01 Revision 1.07 Page 12 of 15 3-Feb-2022 ©2022 Renesas Electronics Corporation  SLG5NT1533V 20 mΩ, Fast Turn On, 2.5 A Load Switch with Discharge Package Drawing and Dimensions 8 Lead STDFN Package 1.0 x 1.6 mm (Fused Lead) Datasheet CFR0011-120-01 Revision 1.07 Page 13 of 15 3-Feb-2022 ©2022 Renesas Electronics Corporation  SLG5NT1533V 20 mΩ, Fast Turn On, 2.5 A Load Switch with Discharge Tape and Reel Specifications Max Units Leader (min) Nominal Reel & Package # of Package Size Hub Size Length Type Pins per Reel per Box Pockets [mm] [mm] [mm] STDFN 8L 1x1.6mm 0.4P FC Green 8 1.0 x 1.6 x 0.55 3,000 3,000 178 / 60 100 400 Trailer (min) Pockets Length [mm] Tape Width [mm] 100 400 8 Part Pitch [mm] 4 Carrier Tape Drawing and Dimensions Pocket BTM Pocket BTM Package Length Width Type STDFN 8L 1x1.6mm 0.4P FC Green Pocket Depth Index Hole Pitch Pocket Pitch Index Hole Diameter Index Hole Index Hole to Tape to Pocket Tape Width Edge Center A0 B0 K0 P0 P1 D0 E F W 1.12 1.72 0.7 4 4 1.55 1.75 3.5 8 Recommended Reflow Soldering Profile Please see IPC/JEDEC J-STD-020: latest revision for reflow profile based on package volume of 0.88 mm3 (nominal). More information can be found at www.jedec.org. Datasheet CFR0011-120-01 Revision 1.07 Page 14 of 15 3-Feb-2022 ©2022 Renesas Electronics Corporation  SLG5NT1533V 20 mΩ, Fast Turn On, 2.5 A Load Switch with Discharge Revision History Date Version Change 2/3/2022 1.07 Updated Company name and logo Fixed typos 11/26/2018 1.06 Added Junction Temperature to Abs Max Table 11/8/2018 1.05 Updated Style and formatting Updated Abs, Max and Electrical Characteristics tables Added Applications information Added Layout Guidelines 8/14/2015 1.04 Add support for 0.85 VD 4/22/2015 1.03 Removed TBD from Timing Diagram 4/20/2015 1.02 Fixed Block Diagram (added Discharge Resistor) 9/15/2014 1.01 Added MSL 6/16/2014 1.0 Production release Datasheet CFR0011-120-01 Revision 1.07 Page 15 of 15 3-Feb-2022 ©2022 Renesas Electronics Corporation IMPORTANT NOTICE AND DISCLAIMER RENESAS ELECTRONICS CORPORATION AND ITS SUBSIDIARIES (“RENESAS”) PROVIDES TECHNICAL SPECIFICATIONS AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS OR IMPLIED, INCLUDING, WITHOUT LIMITATION, ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. These resources are intended for developers skilled in the art designing with Renesas products. You are solely responsible for (1) selecting the appropriate products for your application, (2) designing, validating, and testing your application, and (3) ensuring your application meets applicable standards, and any other safety, security, or other requirements. These resources are subject to change without notice. Renesas grants you permission to use these resources only for development of an application that uses Renesas products. Other reproduction or use of these resources is strictly prohibited. No license is granted to any other Renesas intellectual property or to any third party intellectual property. Renesas disclaims responsibility for, and you will fully indemnify Renesas and its representatives against, any claims, damages, costs, losses, or liabilities arising out of your use of these resources. Renesas' products are provided only subject to Renesas' Terms and Conditions of Sale or other applicable terms agreed to in writing. No use of any Renesas resources expands or otherwise alters any applicable warranties or warranty disclaimers for these products. (Rev.1.0 Mar 2020) Corporate Headquarters Contact Information TOYOSU FORESIA, 3-2-24 Toyosu, Koto-ku, Tokyo 135-0061, Japan www.renesas.com For further information on a product, technology, the most up-to-date version of a document, or your nearest sales office, please visit: www.renesas.com/contact/ Trademarks Renesas and the Renesas logo are trademarks of Renesas Electronics Corporation. All trademarks and registered trademarks are the property of their respective owners. © 2021 Renesas Electronics Corporation. All rights reserved.
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