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SLG7NT4129V

SLG7NT4129V

  • 厂商:

    DIALOGSEMICONDUCTOR(戴乐格)

  • 封装:

    DFN12

  • 描述:

    IC INTERFACE SPECIALIZED 12TDFN

  • 数据手册
  • 价格&库存
SLG7NT4129V 数据手册
SLG7NT4129 PCIE RTD3 General Description Features • Low Power Consumption • Dynamic Supply Voltage • RoHS Compliant / Halogen-Free • Pb-Free TDFN-12 Package Pin Configuration VDD 1 12 DEVICE_RESET# PWR_CNTRL_GPIO# 2 11 PCIE_WAKE# PLT_RST# 3 10 NC DEVICE_WAKE# 4 RST_CNTRL_GPIO# 5 NC 6 SLG7NT4129 Renesas SLG7NT4129 is a low power and small form device. The SoC is housed in a 2.5mm x 2.5mm TDFN package which is optimal for using with small devices. TDFN-12 TOP VIEW 9 WAKE_GPIO 8 NC 7 GND Thermal Pad connected to GND Output Summary • 2 Outputs – Open Drain • 2 Outputs – 3-State Block Diagram Renesas Electronics Corporation. SLG7NT4129_DS_r102 SLG7NT4129_GP_r004 Rev 1.02 Revised February 25, 2022 SLG7NT4129 PCIE RTD3 Pin Configuration Pin # 1 2 3 4 5 6 7 8 9 10 11 12 Exposed Bottom Pad Pin Name VDD PWR_CNTRL_GPIO# PLT_RST# DEVICE_WAKE# RST_CNTRL_GPIO# NC GND NC WAKE_GPIO NC PCIE_WAKE# DEVICE_RESET# Exposed Bottom Pad Type PWR Input Input Input/Output Input -GND -Output -Input/Output Output GND Pin Description Supply Voltage Digital Input Digital Input 3-State Digital Input Keep floating or connect to GND Ground Keep floating or connect to GND Open Drain Keep floating or connect to GND 3-State Open Drain Ground Ordering Information Part Number SLG7NT4129V SLG7NT4129VTR SLG7NT4129_DS_r102 Package Type V = TDFN-12 VTR = TDFN-12 - Tape and Reel (3k units) Page 2 2 SLG7NT4129 PCIE RTD3 Absolute Maximum Conditions Parameter Min. Max. Unit VHIGH to GND -0.3 7 V Voltage at input pins -0.3 7 V Current at input pin -1.0 1.0 mA Storage temperature range -65 150 °C Junction temperature -- 150 °C Electrical Characteristics (@ 25°C, unless otherwise stated) Symbol Parameter VDD Condition/Note Min. Typ. Max. Unit 1.71 -- 3.6 V -- 1 -- μA -40 25 85 °C -100 -- 100 nA Logic Input, at VDD=1.8V 1.1 -- -- Logic Input, at VDD=3.3V 1.8 Logic Input, at VDD=1.8V -- -- 0.65 Supply Voltage IQ Quiescent Current TA Operating Temperature IL Input Leakage Current Static inputs and outputs Leakage Current for Digital Inputs or outputs in High impedance state VIH HIGH-Level Input Voltage VIL LOW-Level Input Voltage IIH HIGH-Level Input Current Logic Input Pins; VIN=VDD -1 1 μA IIL LOW-Level Input Current Logic Input Pins; VIN=0V -1 1 μA ms TDLY0 Delay0 Time VOH Output Voltage High VOL VO IOL TSU Output Voltage Low Logic Input, at VDD=3.3V LOW-Level Output Current Start up Time 3 3.9 3-State, OE=1, IOH = 100µA at VDD=1.8V 1.66 -- -- 3-State, OE=1, IOH = 3mA at VDD=3.3V 2.1 -- -- 3-State, OE=1, IOL = 100µA at VDD=1.8V -- -- 0.04 3-State, OE=1, IOL = 3mA at VDD=3.3V -- -- 0.81 Open Drain, IOL = 5mA, at VDD=1.8V -- -- 0.340 Open Drain, IOL = 20mA at VDD=3.3V -- -- 0.605 -- -- VDD 3-State, OE=1, VOL =0.15V, at VDD=1.8V 0.34 -- -- 3-State, OE=1, VOL = 0.4V, at VDD=3.3V 1.836 -- -- Open Drain, VOL =0.15V, at VDD=1.8V 2.7 -- -- Open Drain, VOL = 0.4V, at VDD=3.3V 14.6 -- -- -- 7 -- SLG7NT4129_DS_r102 After VDD reaches 1.6V level V 1.1 2.1 Maximal Voltage Applied to any PIN in High-Impedance State V V V V mA ms Page 3 3 SLG7NT4129 PCIE RTD3 Timing diagram SLG7NT4129_DS_r102 Page 4 4 SLG7NT4129 PCIE RTD3 Package Top Marking Datasheet Revision 1.02 SLG7NT4129_DS_r102 Programming Code Number 04 Part Code Revision Date 4129V AA 02/25/2022 Page 5 5 SLG7NT4129 PCIE RTD3 Package Drawing and Dimensions 12 Lead TDFN Package JEDEC MO-252, Variation 2525E SLG7NT4129_DS_r102 Page 6 6 SLG7NT4129 PCIE RTD3 Tape and Reel Specification # of Package Type Pins TDFN 12L 2.5x2.5mm 0.4P Green 12 Max Units Nominal Package Size (mm) per reel 2.5x2.5x0.75 3000 Trailer A per box Reel & Hub Size (mm) Pockets 3000 178/60 42 Leader B Pocket (mm) Length Length Pockets (mm) (mm) 168 42 168 Width Pitch 8 4 Carrier Tape Drawing and Dimensions Package Type TDFN 12L 2.5x2.5mm 0.4P Green Pocket BTM Length (mm) Pocket BTM Width (mm) Pocket Depth (mm) Index Hole Pitch (mm) Pocket Pitch (mm) Index Hole Diameter (mm) Index Hole Index Hole to Tape to Pocket Tape Width Edge Center (mm) (mm) (mm) A0 B0 K0 P0 P1 D0 E F W 2.75 2.75 1.05 4 4 1.55 1.75 3.5 8 Refer to EIA-481 Specifications Recommended Reflow Soldering Profile Please see IPC/JEDEC J-STD-020: latest revision for reflow profile based on package volume of 4.6875 mm3 (nominal). More information can be found at www.jedec.org. SLG7NT4129_DS_r102 Page 7 7 SLG7NT4129 PCIE RTD3 Datasheet Revision History Date 11/08/2012 11/22/2012 11/26/2012 01/18/2013 01/23/2013 06/11/2013 02/25/2022 Version 0.1 0.11 0.20 0.21 1.0 1.01 1.02 SLG7NT4129_DS_r102 Change New design Changed PIN12 type to Open Drain Changed DEVICE_WAKE# and PCIE_WAKE# functionality to bi-directional Some typos in PIN out table are fixed Production Release Housekeeping (fixed block diagram) Updated Company name and logo Page 8 8 IMPORTANT NOTICE AND DISCLAIMER RENESAS ELECTRONICS CORPORATION AND ITS SUBSIDIARIES (“RENESAS”) PROVIDES TECHNICAL SPECIFICATIONS AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS OR IMPLIED, INCLUDING, WITHOUT LIMITATION, ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. These resources are intended for developers skilled in the art designing with Renesas products. You are solely responsible for (1) selecting the appropriate products for your application, (2) designing, validating, and testing your application, and (3) ensuring your application meets applicable standards, and any other safety, security, or other requirements. These resources are subject to change without notice. Renesas grants you permission to use these resources only for development of an application that uses Renesas products. Other reproduction or use of these resources is strictly prohibited. No license is granted to any other Renesas intellectual property or to any third party intellectual property. Renesas disclaims responsibility for, and you will fully indemnify Renesas and its representatives against, any claims, damages, costs, losses, or liabilities arising out of your use of these resources. Renesas' products are provided only subject to Renesas' Terms and Conditions of Sale or other applicable terms agreed to in writing. No use of any Renesas resources expands or otherwise alters any applicable warranties or warranty disclaimers for these products. (Rev.1.0 Mar 2020) Corporate Headquarters Contact Information TOYOSU FORESIA, 3-2-24 Toyosu, Koto-ku, Tokyo 135-0061, Japan www.renesas.com For further information on a product, technology, the most up-to-date version of a document, or your nearest sales office, please visit: www.renesas.com/contact/ Trademarks Renesas and the Renesas logo are trademarks of Renesas Electronics Corporation. All trademarks and registered trademarks are the property of their respective owners. © 2021 Renesas Electronics Corporation. All rights reserved.
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