BC337-40

BC337/338(NPN) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features
Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Value BC337 50 BC338 30 BC337 45 BC338 25 Units V V Dimensions in inches and (millimeters) 5 V Collector Current -Continuous 800 mA PD Total Device Dissipation 625 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage BC337 BC338 Collector-emitter breakdown voltage BC337 BC338 Emitter-base breakdown voltage Collector cut-off current BC337 BC338 Collector cut-off current BC337 BC338 Emitter cut-off current BC337/BC338 BC337-16/BC338-16 BC337-25/BC338-25 BC337-40/BC338-40 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage VCBO conditions MIN IC= 10mA , VEBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE Transition frequency fT Collector Output Capacitance Cob ht t p : // TYP MAX UNIT IC= 100uA, IE=0 50 30 V V 45 25 5 V V V IB=0 VCEO Base-emitter voltage Revision:20170701-P1 Test IE= 10uA, IC=0 VCB= 45V, IE=0 VCB= 25V, IE=0 VCE= 40V, IB=0 VCE= 20V, IB=0 VEB= 4 V, IC=0 VCE=1V, IC= 100mA VCE=1V, IC= 300mA IC=500mA, IB= 50mA IC= 500mA, IB=50mA 100 100 160 250 60 VCE=1V, IC= 300mA VCE= 5V, IC= 10mA f = 100MHz VCB=10V,IE=0 f=1MHZ www.lgesem i .c o m 210 0.1 0.1 0.2 0.2 0.1 630 250 400 630 uA 0.7 1.2 V V 1.2 V uA uA MHz 15 pF mail:lge@lgesemi.com BC337/338(NPN) TO-92 Bipolar Transistors Typical Characteristics Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com BC337/338(NPN) TO-92 Bipolar Transistors Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com