BZD27C200P

BZD27C Series Voltage Regulator Diodes BREAKDOWN VOLTAGE : 7 - 188 VOLTS PEAK PULSE POWER : 150 WATTS SOD-123FL Features ◇ Zener and surge current specification ◇ ◇ Low leakage current Excellent stability ◇ High temperature soldering guaranteed: Cathode Band Top View 1.0±0.2 Sillicon planar zener diodes. Low profile surface-mount package. 1.9± 0.1 ◇ ◇ 1.4± 0.15 0.10-0.30 2.8±0.1 0.6±0.25 265℃/10 seconds, at terminals Mechanical Data 3.7±0.2 ◇ Case: JEDEC SOD-123FL molded plastic ◇ Polarity: Color band denotes positive end Dimensions in millimeters ( cathode ) except for bidirectional ◇ Marking code: see TABLE 1 ◇ Weight: 0.006 ounces, 0.02 grams ◇ Mounting position: Any ABSOLUTE MAXIMUM RATINGS AND CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified SYMBOL VALUE UNITS PPPM 150 Watts Ptot 0.8 Watts Reverse current at stand-off voltage @ V WM IR SEE TABLE 1 µA Maximum instantaneous forward voltage at 0.2A VF 1.2 Volts Thermal resistance junction to ambient RθJA 180 K/W Operating temperature junction range TJ - 55 to +150 ℃ TSTG - 55 to +150 ℃ Non-repetitive peak pulse power dissipation with a 10/1000µs waveform (NOTE 1) Power dissipation at T A=25℃ (NOTE 2) Storage temperature range NOTES:(1)TJ=25℃ prior to surge. (2)Mounted on epoxy-glass PCB with 3×3 mm Cu pads(≥40µm thick) (3)Non-repetitive peak reverse current in accordance with "IEC 60-1,Section 8" (10/1000 µs pulse) Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com BZD27C Series Voltage Regulator Diodes ELECTRICAL CHARACTERISTICS (at T =25℃ unless otherwise noted) J When used as voltage regulator diodes (NOTE 1) Differential resistance Temperature coefficient Vz@IzT rdif@Iz αz@Iz Test current IZT V Ω %/℃ mA Working voltage Partnumber Reverse current at reverse voltage IR VR µA V min max typ max min max max BZD27C3V6P 3.4 3.8 4 8 -0.14 -0.04 100 100 1 BZD27C3V9P 3.7 4.1 4 8 -0.14 -0.04 100 50 1 BZD27C4V3P 4 4.6 4 7 -0.12 -0.02 100 25 1 BZD27C4V7P 4.4 5 3 7 -0.1 0 100 10 1 BZD27C5V1P 4.8 5.4 3 6 -0.08 0.02 100 5 1 BZD27C5V6P 5.2 6 2 4 -0.04 0.04 100 10 2 BZD27C6V2P 5.8 6.6 2 3 -0.01 0.06 100 5 2 BZD27C6V8P 6.4 7.2 1 3 0 0.07 100 10 3 BZD27C7V5P 7 7.9 1 2 0 0.07 100 50 3 BZD27C8V2P 7.7 8.7 1 2 0.03 0.08 100 10 3 BZD27C9V1P 8.5 9.6 2 4 0.03 0.08 50 10 5 BZD27C10P 9.4 10.6 2 4 0.05 0.09 50 7 7.5 BZD27C11P 10.4 11.6 4 7 0.05 0.1 50 4.0 8.2 BZD27C12P 11.4 12.7 4 7 0.05 0.1 50 3.0 9.1 BZD27C13P 12.4 14.1 5 10 0.05 0.1 50 2 10 BZD27C15P 13.8 15.6 5 10 0.05 0.1 50 1 11 BZD27C16P 15.3 17.1 6 15 0.06 0.11 25 1 12 BZD27C18P 16.8 19.1 6 15 0.06 0.11 25 1 13 BZD27C20P 18.8 21.2 6 15 0.06 0.11 25 1 15 BZD27C22P 20.8 23.3 6 15 0.06 0.11 25 1 16 BZD27C24P 22.8 25.6 7 15 0.06 0.11 25 1 18 BZD27C27P 25.1 28.9 7 15 0.06 0.11 25 1 20 BZD27C30P 28 32 8 15 0.06 0.11 25 1 22 BZD27C33P 31 35 8 15 0.06 0.11 25 1 24 BZD27C36P 34 38 21 40 0.06 0.11 10 1 27 BZD27C39P 37 41 21 40 0.06 0.11 10 1 30 BZD27C43P 40 46 24 45 0.07 0.12 10 1 33 BZD27C47P 44 50 24 45 0.07 0.12 10 1 36 BZD27C51P 48 54 25 60 0.07 0.12 10 1 39 BZD27C56P 52 60 25 60 0.07 0.12 10 1 43 BZD27C62P 58 66 25 80 0.08 0.13 10 1 47 BZD27C68P 64 72 25 80 0.08 0.13 10 1 51 BZD27C75P 70 79 30 100 0.08 0.13 10 1 56 BZD27C82P 77 87 30 100 0.08 0.13 10 1 62 BZD27C91P 85 96 60 200 0.08 0.13 5 1 68 BZD27C100P 94 106 60 200 0.09 0.13 5 1 75 BZD27C110P 104 116 80 250 0.09 0.13 5 1 82 BZD27C120P 114 127 80 250 0.09 0.13 5 1 91 BZD27C130P 124 141 110 300 0.09 0.13 5 1 100 BZD27C150P 138 156 130 300 0.09 0.13 5 1 110 BZD27C160P 153 171 150 350 0.09 0.13 5 1 120 BZD27C180P 168 191 180 400 0.09 0.13 5 1 130 BZD27C200P 188 212 200 500 0.09 0.13 5 1 150 Note:1.Pulse test:tp≤5ms. Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com BZD27C Series Voltage Regulator Diodes ELECTRICAL CHARACTERISTICS (at T =25℃ unless otherwise noted) J When used as protection diodes Partnumber Rev.Breakdown voltage Test current Temperature coefficient V(BR)R@Itest Itest αz@Itest VC V mA %/℃ V min Clamping voltage min max max Reverse current at stand-off voltage @IRSM1) A IR @Vwm µA V max BZD27C7V5P 7 100 0 0.07 11.3 13.3 1500 6.2 BZD27C8V2P 7.7 100 0.03 0.08 12.3 12.2 1200 6.8 BZD27C9V1P 8.5 50 0.03 0.08 13.3 11.3 100 7.5 BZD27C10P 9.4 50 0.05 0.09 14.8 10.1 20 8.2 BZD27C11P 10.4 50 0.05 0.1 15.7 9.6 5 9.1 BZD27C12P 11.4 50 0.05 0.1 17 8.8 5 10.0 BZD27C13P 12.4 50 0.05 0.1 18.9 7.9 5 11 BZD27C15P 13.8 50 0.05 0.1 20.9 7.2 5 12 BZD27C16P 15.3 25 0.06 0.11 22.9 6.6 5 13 BZD27C18P 16.8 25 0.06 0.11 25.6 5.9 5 15 BZD27C20P 18.8 25 0.06 0.11 28.4 5.3 5 16 BZD27C22P 20.8 25 0.06 0.11 31 4.8 5 18 BZD27C24P 22.8 25 0.06 0.11 33.8 4.4 5 20 BZD27C27P 25.1 25 0.06 0.11 38.1 3.9 5 22 BZD27C30P 28 25 0.06 0.11 42.2 3.6 5 24 BZD27C33P 31 25 0.06 0.11 46.2 3.2 5 27 BZD27C36P 34 10 0.06 0.11 50.1 3 5 30 BZD27C39P 37 10 0.06 0.11 54.1 2.8 5 33 BZD27C43P 40 10 0.07 0.12 60.7 2.5 5 36 BZD27C47P 44 10 0.07 0.12 65.5 2.3 5 39 BZD27C51P 48 10 0.07 0.12 70.8 2.1 5 43 BZD27C56P 52 10 0.07 0.12 78.6 1.9 5 47 BZD27C62P 58 10 0.08 0.13 86.5 1.7 5 51 BZD27C68P 64 10 0.08 0.13 94.4 1.6 5 56 BZD27C75P 70 10 0.08 0.13 103.5 1.5 5 62 BZD27C82P 77 10 0.08 0.13 114 1.3 5 68 BZD27C91P 85 5 0.09 0.13 126 1.2 5 75 BZD27C100P 94 5 0.09 0.13 139 1.1 5 82 BZD27C110P 104 5 0.09 0.13 139 0.72 5 91 BZD27C120P 114 5 0.09 0.13 152 0.65 5 100 BZD27C130P 124 5 0.09 0.13 169 0.59 5 110 BZD27C150P 138 5 0.09 0.13 187 0.53 5 120 BZD27C160P 153 5 0.09 0.13 205 0.48 5 130 BZD27C180P 168 5 0.09 0.13 229 0.43 5 150 BZD27C200P 188 5 0.09 0.13 254 0.39 5 160 Note:1)Non-repetitive peak reverse current in accordance with"IEC 60-1,Section 8"(10/1000µs pulse);see Fig.4. Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com BZD27C Series Voltage Regulator Diodes Ratings AND Charactieristic Curves Figure 2. Maximum Pulse Power Dissipation vs. Zener Voltage Figure 1. Forward Current vs. Forward Voltage 10.00 160 Typ. VF PRSM–Max. Pulse Power Dissipation ( W ) I F – Forward Current ( A ) 140 Max. VF 1.00 0.10 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 120 100 80 60 40 20 0 0 25 VF – Forward Voltage ( V ) 75 100 125 150 175 200 V Znom – Zener Voltage ( V ) Figure 3. Typ. Diode Capacitance vs. Reverse Voltage C D – Typ. Junction Capacitance ( pF ) 50 Figure 4. Non-Repetitive Peak Reverse Current Pulse Definition 10000 C5V1P C6V8P C12P IRSM (%) 100 90 C18P 1000 t1 = 10 µs t2 = 1000 µ s 50 100 C27P C51P 10 C200P 10 0.0 0.5 1.0 1.5 2.0 2.5 VR – Reverse Voltage (V) t t1 3.0 t2 Figure 5. Power Dissipation vs. Ambient Temperature Ptot –Power Dissipation ( W ) 3.0 tie point temperature 2.5 2.0 1.5 ambient temperature 1.0 0.5 0.0 0 25 50 75 100 125 150 Tamb – Ambient Temperature ( qC ) Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com