BZD27C10P – BZD27C220P
Taiwan Semiconductor
1W, 10V - 220V Zener Diode
FEATURES
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KEY PARAMETERS
Silicon zener diodes
Low profile surface-mount package
Zener and surge current specification
Low leakage current
Excellent stability
Moisture sensitivity level: level 1, per J-STD-020
RoHS Compliant
Halogen-free according to IEC 61249-2-21
PARAMETER
VALUE
UNIT
VZ
10 - 220
V
Test current IZT
5 - 50
mA
Ptot
1
W
TJ MAX
175
°C
Package
Sub SMA
Configuration
Single die
APPLICATIONS
● Voltage regulating
● Reference voltage
● Protection circuit
MECHANICAL DATA
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Case: Sub SMA
Molding compound meets UL 94V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.019g (approximately)
Sub SMA
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
VF
1.2
V
2.3
W
1.0
W
PZSM
300
W
PRSM
150
W
PRSM
100
W
Junction temperature
TJ
- 55 to +175
°C
Storage temperature
TSTG
- 55 to +175
°C
Forward voltage @ IF = 0.2A
TL = 73°C
Power dissipation
TA = 25°C
Non-repetitive peak pulse power dissipation
100μs square pulse
(2)
Non-repetitive peak pulse power dissipation
10/1000μs waveform (BZD27C10P to BZD27C100P)
Non-repetitive peak pulse power dissipation
10/1000μs waveform (BZD27C110P to BZD27C220P)
(1)
Ptot
Notes:
1. Mounted on Cu-Pad size 5mm x 5mm
2. TJ = 25°C prior to surge
1
Version: AB2103
BZD27C10P – BZD27C220P
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-lead thermal resistance
RӨJL
44
°C/W
Junction-to-ambient thermal resistance
RӨJA
88
°C/W
Junction-to-case thermal resistance
RӨJC
48
°C/W
Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board)
ORDERING INFORMATION
ORDERING CODE(1)
PACKAGE
PACKING
BZD27CxP
Sub SMA
10,000 / Tape & Reel
Notes:
1. “x” defines voltage from 10V(BZD27C10P) to 220V(BZD27C220P)
2
Version: AB2103
BZD27C10P – BZD27C220P
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
Part
number
Working Voltage
Differential
Resistance
Temperature
Coefficient
Test
Current
VZ @ IZT
rdif @ IZ
αZ @ IZ
IZT
IR
VR
V
Ω
%/ C
mA
μA
V
Marking
code
o
Min
Nom
Max
Typ
Max
Min
Max
Reverse Current@
Reverse Voltage
Max
BZD27C10P
E1
9.4
10
10.6
2
4
0.05
0.09
50
7
7.5
BZD27C11P
E2
10.4
11
11.6
4
7
0.05
0.10
50
4
8.2
BZD27C12P
E3
11.4 12.05 12.7
4
7
0.05
0.10
50
3
9.1
BZD27C13P
E4
12.4 13.25 14.1
5
10
0.05
0.10
50
2
10
BZD27C15P
E5
13.8
14.7
15.6
5
10
0.05
0.10
25
1
11
BZD27C16P
E6
15.3
16.2
17.1
6
15
0.06
0.11
25
1
12
BZD27C18P
E7
16.8 17.95 19.1
6
15
0.06
0.11
25
1
13
BZD27C20P
E8
18.8
21.2
6
15
0.06
0.11
25
1
15
BZD27C22P
E9
20.8 22.05 23.3
6
15
0.06
0.11
25
1
16
BZD27C24P
F0
22.8
24.2
25.6
7
15
0.06
0.11
25
1
18
BZD27C27P
F1
25.1
27
28.9
7
15
0.06
0.11
25
1
20
BZD27C30P
F2
28
30
32
8
15
0.06
0.11
25
1
22
BZD27C33P
F3
31
33
35
8
15
0.06
0.11
25
1
24
BZD27C36P
F4
34
36
38
21
40
0.06
0.11
10
1
27
BZD27C39P
F5
37
39
41
21
40
0.06
0.11
10
1
30
BZD27C43P
F6
40
43
46
24
45
0.07
0.12
10
1
33
BZD27C47P
F7
44
47
50
24
45
0.07
0.12
10
1
36
BZD27C51P
F8
48
51
54
25
60
0.07
0.12
10
1
39
BZD27C56P
F9
52
56
60
25
60
0.07
0.12
10
1
43
BZD27C62P
G0
58
62
66
25
80
0.08
0.13
10
1
47
BZD27C68P
G1
64
68
72
25
80
0.08
0.13
10
1
51
BZD27C75P
G2
70
74.5
79
30
100
0.08
0.13
10
1
56
BZD27C82P
G3
77
82
87
60
200
0.08
0.13
10
1
62
BZD27C91P
G4
85
90.5
96
60
200
0.08
0.13
5
1
68
BZD27C100P
G5
94
100
106
60
200
0.09
0.13
5
1
75
BZD27C110P
G6
104
110
116
80
250
0.09
0.13
5
1
82
BZD27C120P
G7
114
120.5
127
150
300
0.09
0.13
5
1
91
BZD27C130P
G
124
132.5
141
150
300
0.09
0.13
5
1
100
BZD27C150P
G9
138
147
156
150
300
0.09
0.13
5
1
110
BZD27C160P
H0
153
162
171
150
350
0.09
0.13
5
1
120
BZD27C180P
H1
168
179.5
191
280
450
0.09
0.13
5
1
130
BZD27C200P
H2
188
200
212
350
750
0.09
0.13
5
1
150
BZD27C220P
H3
208
220.5
233
430
900
0.09
0.13
5
1
160
20
3
Version: AB2103
BZD27C10P – BZD27C220P
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Power Dissipation
Fig.2 Typical Junction Capacitance
1000
2.0
C12P
RthjL=44°C/W
CAPACITANCE (pF)
POWER DISSIPATION(W)
2.5
1.5
RthjA=88°C/W
1.0
100
C27P
0.5
C200P
10
0.0
25
55
85
115
145
0
175
TEMPERATURE (°C)
1
2
3
REVERSE VOLTAGE (V)
1010
1
1
0.1
UF1DLW
Typ. VF
Max. VF
TJ=125°C
TJ=25°C
(A)
INSTANTANEOUS FORWARD CURRENT (A)
Fig.3 Typical Forward Characteristics
0.01
0.1
0.0010.6 0.7 0.8 0.9
0.3
0.4
0.5
Pulse width
1 1.1 1.2 1.3 1.4 1.5 1.6
0.6
0.7
0.8
0.9
1
1.1
1.2
FORWARD VOLTAGE (V)
4
Version: AB2103
BZD27C10P – BZD27C220P
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
Sub SMA
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
5
P/N
= Marking Code
G
= Green Compound
YW
= Date Code
F
= Factory Code
Version: AB2103
BZD27C10P – BZD27C220P
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf
assumes no responsibility or liability for any errors or inaccuracies.
Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability
for application assistance or the design of Purchasers’ products.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6
Version: AB2103
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