TSF20H100C-S – TSF20H150C-S
Taiwan Semiconductor
20A, 100V - 150V Trench Schottky Rectifier
FEATURES
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KEY PARAMETERS
Patented Trench Schottky technology
Excellent high temperature stability
Low forward voltage
Low power loss/ high efficiency
High forward surge capability
Compliant RoHS
Halogen-free according to IEC 61249-2-21
APPLICATIONS
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PARAMETER
VALUE
UNIT
IF
20
A
VRRM
100 - 150
V
IFSM
120
A
TJ MAX
150
°C
Package
ITO-220AB
Configuration
Dual dies
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
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Case: ITO-220AB
Molding compound meets UL 94V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Mounting torque: 0.56 N⋅m maximum
Polarity: As marked
Weight: 1.70g (approximately)
ITO-220AB
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Repetitive peak reverse voltage
VRRM
TSF20H
100C-S
TSF20H
100C
100
Reverse voltage, total rms value
VR(RMS)
70
PARAMETER
SYMBOL
Marking code on the device
TSF20H
120C-S
TSF20H
120C
120
TSF20H
150C-S
TSF20H
150C
150
84
105
UNIT
V
V
IF
20
A
IFSM
120
A
dv/dt
10,000
V/µs
Junction temperature
TJ
-55 to +150
°C
Storage temperature
TSTG
-55 to +150
°C
Forward current
Surge peak forward current, 8.3ms single
half sine-wave superimposed on rated load
Critical rate of rise of off-state voltage
1
Version: B2105
TSF20H100C-S – TSF20H150C-S
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
RӨJC
4.5
°C/W
Junction-to-case thermal resistance
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
Forward voltage per diode
CONDITIONS
(1)
TYP
MAX
UNIT
TSF20H100C-S
SYMBOL
0.59
-
V
TSF20H120C-S IF = 5A, TJ = 25°C
0.66
-
V
TSF20H150C-S
0.74
-
V
TSF20H100C-S
0.71
0.79
V
TSF20H120C-S IF = 10A, TJ = 25°C
0.78
0.86
V
0.82
0.92
V
0.53
-
V
TSF20H120C-S IF = 5A, TJ = 125°C
0.56
-
V
TSF20H150C-S
0.60
-
V
TSF20H100C-S
0.62
0.70
V
TSF20H120C-S IF = 10A, TJ = 125°C
0.64
0.72
V
TSF20H150C-S
0.68
0.78
V
-
150
µA
-
100
µA
-
18
mA
-
12
mA
TSF20H150C-S
VF
TSF20H100C-S
TSF20H100C-S
TSF20H120C-S TJ = 25°C
Reverse current @ rated VR
(2)
per diode
TSF20H150C-S
TSF20H100C-S
TSF20H120C-S TJ = 125°C
TSF20H150C-S
IR
Notes:
1. Pulse test with PW = 0.3ms
2. Pulse test with PW = 30ms
ORDERING INFORMATION
ORDERING CODE(1)
PACKAGE
PACKING
TSF20HxC-S
ITO-220AB
50 / Tube
Notes:
1. “x” defines voltage from 100V(TSF20H100C-S) to 150V(TSF20H150C-S)
2
Version: B2105
TSF20H100C-S – TSF20H150C-S
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
10000
TSF20H100C-S-120C-S
20
TSF20H100C-S
CAPACITANCE (pF)
15
10
TSF20H150C-S
1000
TSF20H120C-S
100
TSF20H150C-S
5
f=1.0MHz
Vsig=50mVp-p
10
0
50
75
100
125
0.1
150
1
CASE TEMPERATURE (°C)
INSTANTANEOUS FORWARD CURRENT (A)
INSTANTANEOUS REVERSE CURRENT (mA)
Fig.4 Typical Forward Characteristics
100
10
TJ=150°C
1
0.1
TJ=100°C
TJ=125°C
0.01
0.001
TJ=25°C
0.0001
10
20
30
40
50
60
70
80
90 100
100 10
TSF20H100C-S
10
UF1DLW
1
0.1
TJ=150°C
TJ=125°C
TJ=125°C
TJ=25°C
TJ=100°C
0.01
0.1
0.001
0.1
Pulse width 300μs
1% duty cycle
Pulse width
0.3
0.3
0.4
INSTANTANEOUS FORWARD CURRENT (A)
INSTANTANEOUS REVERSE CURRENT (mA)
TSF20H120C-S
TJ=150°C
1
TJ=125°C
0.01
0.001
TJ=25°C
0.0001
10
20
30
40
50
60
70
80
90
0.5
0.6
0.7
0.7
0.8
0.9
0.9
1.1
1
1.1
1.2
1.1
1.2
Fig.6 Typical Forward Characteristics
100
TJ=100°C
0.5
FORWARD VOLTAGE (V)
Fig.5 Typical Reverse Characteristics
0.1
TJ=25°C
1
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
10
100
REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics
TSF20H100C-S
10
(A)
25
100
100 10
TSF20H120C-S
10
UF1DLW
1
TJ=150°C
TJ=125°C
TJ=125°C
TJ=25°C
1
TJ=100°C
0.01
0.1
0.001
0.1
3
Pulse width 300μs
1% duty cycle
Pulse width
0.3
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
TJ=25°C
0.1
(A)
AVERAGE FORWARD CURRENT (A)
25
0.3
0.4
0.5
0.7
0.5
0.6
0.7
FORWARD VOLTAGE0.8
(V)
0.9
0.9
1.1
1
Version: B2105
TSF20H100C-S – TSF20H150C-S
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.8 Typical Forward Characteristics
TSF20H150C-S
10
TJ=150°C
1
TJ=125°C
0.1
TJ=100°C
0.01
0.001
TJ=25°C
0.0001
10
20
30
40
50
60
70
80
90
100
100 10
TSF20H150C-S
10
UF1DLW
1
TJ=150°C
TJ=125°C
TJ=125°C
0.1
TJ=25°C
1
TJ=100°C
0.01
0.1
0.001
0.1
TJ=25°C
(A)
100
INSTANTANEOUS FORWARD CURRENT (A)
INSTANTANEOUS REVERSE CURRENT (mA)
Fig.7 Typical Reverse Characteristics
Pulse width 300μs
1% duty cycle
Pulse width
0.3
0.3
0.4
0.5
0.5
0.6
0.7
0.7
0.8
0.9
0.9
1
1.1
1.1
FORWARD VOLTAGE (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
4
Version: B2105
1.2
TSF20H100C-S – TSF20H150C-S
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
ITO-220AB
MARKING DIAGRAM
5
P/N
= Marking Code
G
= Green Compound
YWW
= Date Code
F
= Factory Code
Version: B2105
TSF20H100C-S – TSF20H150C-S
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability
for application assistance or the design of Purchasers’ products.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6
Version: B2105
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