MBRS1535CT MNG

MBRS1535CT – MBRS15150CT Taiwan Semiconductor 15A, 35V - 150V Schottky Barrier Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Low power loss, high efficiency Ideal for automated placement Guard ring for overvoltage protection High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 15 A VRRM 35 - 150 V IFSM 150 A TJ MAX 150 APPLICATIONS °C 2 Package TO-263AB (D PAK) Configuration Dual dies ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters MECHANICAL DATA ● ● ● ● ● ● 2 Case: TO-263AB (D PAK) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.37g (approximately) 2 TO-263AB (D PAK) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Peak repetitive reverse (1) surge current Peak repetitive forward current (Rated VR, Square wave, 20KHz) Critical rate of rise of offstate voltage Notes: 1. tp = 2.0μs, 1.0KHz MBRS SYMBOL 1535 CT MBRS 1535CT MBRS 1545 CT MBRS 1545CT MBRS 1550 CT MBRS 1550CT MBRS 1560 CT MBRS 1560CT MBRS MBRS MBRS 1590 15100 15150 UNIT CT CT CT MBRS MBRS MBRS 1590CT 15100CT 15150CT VRRM 35 45 50 60 90 100 150 V VR(RMS) 24 31 35 42 63 70 105 V IF 15 A IFSM 150 A IRRM 1 0.5 A IFRM 15 A dv/dt 10,000 V/μs 1 Version: L2103 MBRS1535CT – MBRS15150CT Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER MBRS MBRS MBRS MBRS MBRS MBRS SYMBOL 1535 1545 1550 1560 1590 15100 CT CT CT CT CT CT MBRS 15150 UNIT CT Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance RӨJA 50 °C/W Junction-to-case thermal resistance RӨJC 2 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per (1) diode CONDITIONS MBRS1535CT MBRS1545CT MBRS1550CT MBRS1560CT MBRS1590CT MBRS15100CT MBRS15150CT MBRS1535CT MBRS1545CT MBRS1550CT MBRS1560CT MBRS1590CT MBRS15100CT MBRS15150CT MBRS1535CT MBRS1545CT MBRS1550CT MBRS1560CT MBRS1590CT MBRS15100CT MBRS15150CT MBRS1535CT MBRS1545CT MBRS1550CT MBRS1560CT MBRS1590CT MBRS15100CT MBRS15150CT SYMBOL IF = 7.5A, TJ = 25°C IF = 15.0A, TJ = 25°C VF IF = 7.5A, TJ = 125°C IF = 15.0A, TJ = 125°C 2 TYP MAX UNIT - - V - 0.75 V - 0.92 V - 0.95 V - 0.84 V - - V - - V - - V - 0.57 V - 0.65 V - 0.82 V - 0.92 V - 0.72 V - - V - - V - - V Version: L2103 MBRS1535CT – MBRS15150CT Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Reverse current @ rated VR (2) per diode CONDITIONS MBRS1535CT MBRS1545CT MBRS1550CT MBRS1560CT TJ = 25°C MBRS1590CT MBRS15100CT MBRS15150CT MBRS1535CT MBRS1545CT MBRS1550CT MBRS1560CT TJ = 125°C MBRS1590CT MBRS15100CT MBRS15150CT SYMBOL TYP MAX UNIT - 100 µA - 15 mA - 10 mA - 5 mA IR Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) MBRS15xCT PACKAGE 2 TO-263AB (D PAK) PACKING 800 / Tape & Reel Notes: 1. “x” defines voltage from 35V(MBRS1535CT) to 150V(MBRS15150CT) 3 Version: L2103 MBRS1535CT – MBRS15150CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 15 CAPACITANCE (pF) 10 5 0 100 f=1.0MHz Vsig=50mVp-p 10 25 50 75 100 125 150 0.1 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) 1 TJ=75°C 0.1 TJ=25°C MBRS1535CT-1545CT MBRS1550CT-15150CT 0.0001 10 20 30 40 50 60 70 80 90 100 100 10 10 UF1DLW T =125°C 1 J TJ=125°C TJ=25°C TJ=25°C 0.1 Pulse width 300μs 1% duty cycle 1 0.01 MBRS1535CT-1545CT MBRS1550CT-1560CT MBRS1590CT-15150CT Pulse width 0.1 0.001 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 180 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) TJ=125°C 0.001 100 Fig.4 Typical Forward Characteristics 100 0.01 10 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 10 MBRS1535CT-1545CT MBRS1550CT-1560CT MBRS1590CT-15150CT (A) AVERAGE FORWARD CURRENT (A) 20 8.3ms single half sine wave 150 120 90 60 30 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 Version: L2103 1.2 MBRS1535CT – MBRS15150CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: L2103 MBRS1535CT – MBRS15150CT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS 2 TO-263AB (D PAK) SUGGESTED PAD LAYOUT MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: L2103 MBRS1535CT – MBRS15150CT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: L2103