TSF10L200CW C0G

TSF10L100CW – TSF10L200CW Taiwan Semiconductor 10A, 100V - 200V Trench Schottky Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Low power loss/ high efficiency High forward surge capability Compliant RoHS Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● PARAMETER VALUE UNIT IF 10 A VRRM 100 - 200 V IFSM 100 A TJ MAX 150 °C Package ITO-220AB Configuration Dual dies Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA ● ● ● ● ● ● ● Case: ITO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Mounting torque: 0.56 N⋅m maximum Polarity: As marked Weight: 1.70g (approximately) ITO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Repetitive peak reverse voltage VRRM TSF10L 100CW TSF10L 100CW 100 Reverse voltage, total rms value VR(RMS) 70 PARAMETER SYMBOL Marking code on the device TSF10L 150CW TSF10L 150CW 150 TSF10L 200C TSF10L 200CW 200 105 140 UNIT V V IF 10 A IFSM 100 A dv/dt 10,000 V/µs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C Forward current Surge peak forward current, 8.3ms single half sine-wave superimposed on rated load Critical rate of rise of off-state voltage 1 Version: B2105 TSF10L100CW – TSF10L200CW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 6.5 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT 0.71 0.80 V 0.81 0.88 V TSF10L200CW 0.84 0.90 V TSF10L100CW 0.91 1.00 V 0.89 0.96 V 0.92 0.98 V 0.62 0.71 V 0.67 0.74 V TSF10L200CW 0.72 0.78 V TSF10L100CW 0.72 0.81 V 0.76 0.83 V 0.80 0.86 V - 100 µA - 50 µA - 10 mA - 5 mA TSF10L100CW TSF10L150CW TSF10L150CW Forward voltage per diode (1) IF = 5A, TJ = 25°C IF = 10A, TJ = 25°C TSF10L200CW VF TSF10L100CW TSF10L150CW TSF10L150CW IF = 5A, TJ = 125°C IF = 10A, TJ = 125°C TSF10L200CW Reverse current @ rated VR (2) per diode TSF10L100CW TSF10L150CW TSF10L200CW TSF10L100CW TSF10L150CW TSF10L200CW TJ = 25°C IR TJ = 125°C Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING TSF10LxCW ITO-220AB 50 / Tube Notes: 1. “x” defines voltage from 100V(TSF10L100CW) to 200V(TSF10L200CW) 2 Version: B2105 TSF10L100CW – TSF10L200CW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 TSF10L100CW 10 CAPACITANCE (pF) 8 6 4 100 TSF10L150CW 10 TSF10L200CW 2 0 f=1.0MHz Vsig=50mVp-p 1 50 75 100 125 150 0.1 1 CASE TEMPERATURE (°C) 100 10 TJ=150°C 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 100 10 TSF10L100CW 10 UF1DLW 1 TJ=150°C TJ=125°C TJ=125°C TJ=25°C 1 TJ=100°C 0.01 0.1 0.001 0.1 Pulse width 300μs 1% duty cycle Pulse width 0.3 0.3 0.4 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) TJ=150°C TJ=125°C 0.01 TJ=100°C 0.001 0.0001 TJ=25°C 0.00001 10 20 30 40 50 60 70 80 90 0.5 0.6 0.7 0.7 0.8 0.9 0.9 1 1.1 1.1 1.2 1.1 1.2 Fig.6 Typical Forward Characteristics 10 0.1 0.5 FORWARD VOLTAGE (V) Fig.5 Typical Reverse Characteristics TSF10L150CW TJ=25°C 0.1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 1 100 Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.3 Typical Reverse Characteristics TSF10L100CW 10 REVERSE VOLTAGE (V) (A) 25 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 3 100 10 TSF10L150CW 1 10 0.1 UF1DLW TJ=150°C TJ=125°C TJ=125°C TJ=25°C 1 TJ=100°C 0.01 0.1 0.001 0.2 0.3 TJ=25°C (A) AVERAGE FORWARD CURRENT (A) 12 Pulse width 300μs 1% duty cycle Pulse width 0.4 0.4 0.5 0.6 0.6 0.8 0.7 0.8 FORWARD VOLTAGE (V) 1.0 0.9 1 1.2 Version: B2105 TSF10L100CW – TSF10L200CW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.8 Typical Forward Characteristics TSF10L200CW 1 TJ=150°C 0.1 TJ=125°C 0.01 TJ=100°C 0.001 0.0001 TJ=25°C 0.00001 10 20 30 40 50 60 70 80 90 100 100 10 TSF10L200CW 10 UF1DLW T =150°C 1 J TJ=125°C TJ=125°C TJ=25°C 0.1 TJ=25°C 1 TJ=100°C 0.01 0.1 0.001 0.3 (A) INSTANTANEOUS FORWARD CURRENT (A) 10 Pulse width 300μs 1% duty cycle Pulse width 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.5 0.4 0.5 0.7 0.6 0.9 1.1 0.7 0.8 0.9 FORWARD VOLTAGE (V) 1 1.3 1.1 Fig.9 Maximum Non-Repetitive Forward Surge Current 110 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.7 Typical Reverse Characteristics 100 90 8.3ms single half sine wave 80 70 60 50 40 30 20 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 Version: B2105 1.2 TSF10L100CW – TSF10L200CW Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS ITO-220AB MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: B2105 TSF10L100CW – TSF10L200CW Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: B2105