MUR360S M6G

MUR305S – MUR360S Taiwan Semiconductor 3A, 50V - 600V Ultra Fast Surface Mount Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction Ideal for automated placement Ultra Fast recovery time for high efficiency Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 3 A VRRM 50 - 600 V IFSM 75 A TJ MAX 175 °C APPLICATIONS ● High frequency rectification ● Freewheeling application ● Switching mode converters and inverters in computer, and telecommunication Package DO-214AB (SMC) Configuration Single die MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.210g (approximately) DO-214AB (SMC) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Repetitive peak reverse voltage VRRM MUR 305S MUR 305S 50 Reverse voltage, total rms value VR(RMS) 35 PARAMETER SYMBOL Marking code on the device MUR 310S MUR 310S 100 MUR 315S MUR 315S 150 MUR 320S MUR 320S 200 MUR 340S MUR 340S 400 MUR 360S MUR 360S 600 70 105 140 280 420 UNIT V V Forward current Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Junction temperature IF 3 A IFSM 75 A TJ - 55 to +175 °C Storage temperature TSTG - 55 to +175 °C 1 Version: I2102 MUR305S – MUR360S Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJL 11 °C/W Junction-to-lead thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS (1) Reverse current @ rated VR (2) Reverse recovery time MUR305S MUR310S MUR315S MUR320S MUR340S MUR360S MUR305S MUR310S MUR315S MUR320S MUR340S MUR360S MUR305S MUR310S MUR315S MUR320S MUR340S MUR360S MUR305S MUR310S MUR315S MUR320S MUR340S MUR360S MUR305S MUR310S MUR315S MUR320S MUR340S MUR360S IF = 3A, TJ = 25°C IF = 3A, TJ = 150°C TJ = 25°C TJ = 150°C IF = 0.5A, IR = 1.0A Irr = 0.25A SYMBOL TYP MAX UNIT - 0.875 V - 1.250 V - 0.710 V - 1.050 V - 5 μA - 10 μA - 150 μA - 250 μA - 25 ns - 50 ns VF VF IR IR trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING MUR3xS DO-214AB (SMC) 3,000 / Tape & Reel Notes: 1. “x” defines voltage from 50V(MUR305S) to 600V(MUR360S) 2 Version: I2102 MUR305S – MUR360S Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 3 CAPACITANCE (pF) 2 1 100 MUR305S - MUR320S MUR340S - MUR360S f=1.0MHz Vsig=50mVp-p 10 0 50 75 100 125 150 0.1 175 1 LEAD TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.4 Typical Forward Characteristics 100 MUR305S - MUR320S 10 TJ=150°C 0.1 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 80 90 100 10 10 MUR305S - MUR320S UF1DLW 1 TJ=150°C TJ=125°C TJ=25°C 0.01 Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.3 0.4 0.5 0.6 0.7 0.8 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) MUR340S - MUR360S 10 TJ=150°C 1 0.1 TJ=25°C 0.001 30 40 50 60 70 80 90 1.6 1 1.1 1.2 1.1 1.2 Fig.6 Typical Forward Characteristics 100 20 1.4 0.9 FORWARD VOLTAGE (V) Fig.5 Typical Reverse Characteristics 10 TJ=25°C 1 0.1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.01 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 1 10 (A) 25 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 10 MUR340S - MUR360S 1 1 0.1 UF1DLW TJ=150°C TJ=125°C TJ=25°C (A) AVERAGE FORWARD CURRENT (A) 4 TJ=25°C 0.01 0.1 0.001 0.4 0.3 Pulse width 300μs 1% duty cycle Pulse width 0.6 0.4 0.5 0.8 0.6 1.0 0.7 0.8 1.2 0.9 1.4 1 FORWARD VOLTAGE (V) 3 Version: I2102 MUR305S – MUR360S Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.7 Maximum Non-Repetitive Forward Surge Current PEAK FORWARD SURGE CURRENT (A) 90 8.3ms single half sine wave 75 60 45 30 15 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 Version: I2102 MUR305S – MUR360S Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AB (SMC) SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: I2102 MUR305S – MUR360S Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: I2102