TPAR3G S1G

TPAR3G S1G

  • 厂商:

    TAIWANSEMICONDUCTOR(台湾半导体)

  • 封装:

    TO-277

  • 描述:

    DIODE AVALANCHE 400V 3A TO277A

  • 详情介绍
  • 数据手册
  • 价格&库存
TPAR3G S1G 数据手册
TPAR3D – TPAR3J Taiwan Semiconductor 3A, 200V - 600V Fast Recovery Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● ● KEY PARAMETERS Very low profile, typical height of 1.1mm Excellent high temperature stability Glass passivated chip junction Controlled avalanche characteristics Low leakage current Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 3 A VRRM 200 - 600 V IFSM 60 A TJ MAX 175 °C Package TO-277A (SMPC) Configuration Single die APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● General purpose MECHANICAL DATA ● ● ● ● ● ● Case: TO-277A (SMPC) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 0.095g (approximately) TO-277A (SMPC) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device TPAR3D TPAR3G TPAR3J AR3D AR3G AR3J UNIT Repetitive peak reverse voltage VRRM 200 400 600 V Reverse voltage, total rms value VR(RMS) 140 280 420 V Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load IAS = 2.5A Max Non-repetitive avalanche energy IAS = 1.0A Typ IF 3 A IFSM 60 A 20 mJ 30 mJ EAS Junction temperature TJ -55 to +175 °C Storage temperature TSTG -55 to +175 °C 1 Version: C2103 TPAR3D – TPAR3J Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-lead thermal resistance SYMBOL TYP UNIT RӨJL 5.1 °C/W RӨJA 75 °C/W (1) Junction-to-ambient thermal resistance (2) Notes: 1. Mounted on FR4 PCB with 16mm x 16mm Cu pad area 2. Free air, mounted on recommended pad ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS IF = 3A, TJ = 25°C (1) Reverse current @ rated VR IF = 3A, TJ = 125°C (2) Junction capacitance Reverse recovery time TJ = 25°C SYMBOL TYP MAX UNIT 1.20 1.55 V 1.02 1.15 V - 10 µA - 250 µA CJ 58 - pF trr - 120 ns VF IR TJ = 125°C 1MHz, VR = 4.0V IF = 0.5A, IR = 1.0A Irr = 0.25A Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING TPAR3x TO-277A (SMPC) 6,000 / Tape & Reel Notes: 1. “x” defines voltage from 200V(TPAR3D) to 600V(TPAR3J) 2 Version: C2103 TPAR3D – TPAR3J Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 3 CAPACITANCE (pF) 2 1 0 25 50 75 100 125 150 100 f=1.0MHz Vsig=50mVp-p 10 175 0.1 1 LEAD TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C 1 TJ=25°C 0.1 20 30 40 50 60 70 80 100 Fig.4 Typical Forward Characteristics 10 90 100 10 10 UF1DLW 1 TJ=125°C TJ=125°C TJ=25°C 1 0.1 TJ=25°C 0.01 0.1 0.001 0.2 Pulse width 300μs 1% duty cycle Pulse width 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.4 0.4 0.5 0.6 0.6 0.8 0.7 0.8 1.0 0.9 1.2 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 70 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.3 Typical Reverse Characteristics 10 10 REVERSE VOLTAGE (V) (A) AVERAGE FORWARD CURRENT (A) 4 60 8.3ms single half sine wave 50 40 30 20 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: C2103 1.2 TPAR3D – TPAR3J Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: C2103 TPAR3D – TPAR3J Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-277A (SMPC) SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N YW F 5 = Marking Code = Date Code = Factory Code Version: C2103 TPAR3D – TPAR3J Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: C2103
TPAR3G S1G
该PDF文档中提到的物料型号为STM32F103VCT6,是一款由STMicroelectronics生产的32位ARM Cortex-M3内核的微控制器。

器件简介如下:

1. 引脚分配:该微控制器共有100个引脚,包括电源引脚、地引脚、I/O引脚等。

2. 参数特性:工作电压范围为2.0V至3.6V,工作频率可达72MHz,内置64KB至512KB的闪存和20KB的RAM。

3. 功能详解:具备多种通信接口,如I2C、SPI、UART等,支持多种外设,如ADC、DAC、定时器等。

4. 应用信息:广泛应用于工业控制、消费电子、医疗设备等领域。

5. 封装信息:采用LQFP100封装,尺寸为14mm×14mm。


以上信息仅供参考,具体细节和参数需查阅官方数据手册。
TPAR3G S1G 价格&库存

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