MBRS10150HMNG

MBRS1035 – MBRS10150 Taiwan Semiconductor 10A, 35V - 150V Schottky Barrier Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Low power loss, high efficiency Ideal for automated placement Guard ring for overvoltage protection High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 10 A VRRM 35 - 150 V IFSM 120 A TJ MAX 175 °C 2 Package TO-263AB (D PAK) Configuration Single die ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters MECHANICAL DATA ● ● ● ● ● ● 2 Case: TO-263AB (D PAK) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.37g (approximately) 2 TO-263AB (D PAK) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device Repetitive peak reverse voltage VRRM Reverse voltage, total rms value VR(RMS) Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Peak repetitive reverse surge (1) current Critical rate of rise of off-state voltage Junction temperature Storage temperature MBRS MBRS MBRS MBRS MBRS 1035 1045 1050 1060 1090 MBRS MBRS MBRS MBRS MBRS 1035 1045 1050 1060 1090 35 45 50 60 90 24 31 35 42 63 MBRS 10100 MBRS 10100 100 70 MBRS UNIT 10150 MBRS 10150 150 V 105 V IF 10 A IFSM 120 A IRRM 1 0.5 A dv/dt 10,000 V/μs TJ -55 to +175 °C TSTG -55 to +175 °C Notes: 1. tp = 2.0μs, 1.0KHz 1 Version: K2103 MBRS1035 – MBRS10150 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance RӨJA 60 °C/W Junction-to-case thermal resistance RӨJC 2 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS (1) MBRS1035 MBRS1045 MBRS1050 MBRS1060 MBRS1090 MBRS10100 MBRS10150 MBRS1035 MBRS1045 MBRS1050 MBRS1060 MBRS1090 MBRS10100 MBRS10150 MBRS1035 MBRS1045 MBRS1050 MBRS1060 MBRS1090 MBRS10100 MBRS10150 MBRS1035 MBRS1045 MBRS1050 MBRS1060 MBRS1090 MBRS10100 MBRS10150 SYMBOL IF = 10A, TJ = 25°C IF = 20A, TJ = 25°C VF IF = 10A, TJ = 125°C IF = 20A, TJ = 125°C 2 TYP MAX UNIT - - V - 0.80 V - 0.85 V - 1.05 V - 0.84 V - 0.95 V - - V - - V - 0.57 V - 0.70 V - 0.71 V - - V - 0.72 V - 0.85 V - - V - - V Version: K2103 MBRS1035 – MBRS10150 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Reverse current @ rated VR (2) CONDITIONS MBRS1035 MBRS1045 MBRS1050 MBRS1060 TJ = 25°C MBRS1090 MBRS10100 MBRS10150 MBRS1035 MBRS1045 MBRS1050 MBRS1060 TJ = 100°C MBRS1090 MBRS10100 MBRS10150 MBRS1035 MBRS1045 MBRS1050 MBRS1060 TJ = 125°C MBRS1090 MBRS10100 MBRS10150 SYMBOL IR TYP MAX UNIT - 100 µA - 15 mA - 10 mA - - mA - - mA - 5 mA Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) MBRS10x PACKAGE 2 TO-263AB (D PAK) PACKING 800 / Tape & Reel Notes: 1. “x” defines voltage from 35V(MBRS1035) to 150V(MBRS10150) 3 Version: K2103 MBRS1035 – MBRS10150 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 600 MBRS1035 - MBRS1045 500 CAPACITANCE (pF) 10 5 400 MBRS1050 - MBRS1060 300 200 MBRS1090 - MBRS10150 100 f=1.0MHz Vsig=50mVp-p 0 0 25 50 75 100 125 150 0.01 175 0.1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) 1 0.1 TJ=25°C 0.01 30 40 50 60 70 80 90 100 100 10 10 UF1DLW 1 TJ=100°C TJ=150°C T =125°C J TJ=25°C 0.1 1 TJ=25°C 0.01 0.1 0.001 0.1 Pulse width 300μs 1% duty cycle Pulse width 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.3 0.4 0.5 0.6 0.7 0.8 0.9 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.9 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 150 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) TJ=100°C 20 100 Fig.4 Typical Forward Characteristics 100 10 10 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 10 1 (A) AVERAGE FORWARD CURRENT (A) 15 8.3ms single half sine wave 120 90 60 30 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 Version: K2103 1.2 MBRS1035 – MBRS10150 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 100 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: K2103 MBRS1035 – MBRS10150 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS 2 TO-263AB (D PAK) SUGGESTED PAD LAYOUT MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: K2103 MBRS1035 – MBRS10150 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: K2103