0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
SFS1005GHMNG

SFS1005GHMNG

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    TO263

  • 描述:

    DIODE GEN PURP 300V 10A TO263AB

  • 数据手册
  • 价格&库存
SFS1005GHMNG 数据手册
SFS1001G – SFS1008G Taiwan Semiconductor 10A, 50V - 600V Super Fast Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Low forward voltage drop Ideal for automated placement High current capability High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 10 A VRRM 50 - 600 V IFSM 125 A TJ MAX 150 °C 2 Package TO-263AB (D PAK) Configuration Dual dies ● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application MECHANICAL DATA ● ● ● ● ● ● 2 Case: TO-263AB (D PAK) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.37g (approximately) 2 TO-263AB (D PAK) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Junction temperature Storage temperature SFS SFS SFS SFS SFS SFS SFS SFS SYMBOL 1001 1002 1003 1004 1005 1006 1007 1008 UNIT G G G G G G G G SFS SFS SFS SFS SFS SFS SFS SFS 1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G VRRM 50 100 150 200 300 400 500 600 V VR(RMS) 35 70 105 140 210 280 350 420 V IF 10 A IFSM 125 A TJ -55 to +150 °C TSTG -55 to +150 °C 1 Version: I2103 SFS1001G – SFS1008G Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 2 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SFS1001G SFS1002G SFS1003G SFS1004G (1) Forward voltage per diode I = 5A, TJ = 25°C SFS1005G F SFS1006G SFS1007G SFS1008G TJ = 25°C (2) Reverse current @ rated VR per diode TJ = 125°C SFS1001G SFS1002G SFS1003G SFS1004G Junction capacitance per diode SFS1005G 1MHz, VR = 4.0V SFS1006G SFS1007G SFS1008G IF = 0.5A, IR = 1.0A Reverse recovery time Irr = 0.25A Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms SYMBOL TYP MAX UNIT - 0.975 V - 1.300 V - 1.700 V - 1 µA - 200 µA 70 - pF 50 - pF - 35 ns VF IR CJ trr ORDERING INFORMATION ORDERING CODE(1) SFS10xG PACKAGE 2 TO-263AB (D PAK) PACKING 800 / Tape & Reel Notes: 1. “x” defines voltage from 50V(SFS1001G) to 600V(SFS1008G) 2 Version: I2103 SFS1001G – SFS1008G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.2 Typical Junction Capacitance 12 100 10 90 CAPACITANCE (pF) 8 6 4 2 SFS1001G - SFS1004G 80 SFS1005G - SFS1008G 70 60 50 0 f=1.0MHz Vsig=50mVp-p 40 25 50 75 100 125 150 1 10 CASE TEMPERATURE (°C) REVERSE VOLTAGE (V) Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) 100 TJ=100°C 10 TJ=75°C 1 TJ=25°C 0.1 20 30 40 50 60 70 80 90 100 100 10 SFS1005G - SFS1006G 10 1 SFS1001G - SFS1004G UF1DLW TJ=125°C TJ=25°C 0.1 1 0.01 SFS1007G - SFS1008G Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 150 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.3 Typical Reverse Characteristics 10 100 (A) AVERAGE FORWARD CURRENT (A) Fig.1 Forward Current Derating Curve 8.3ms single half sine wave 125 100 75 50 25 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: I2103 1.2 SFS1001G – SFS1008G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: I2103 SFS1001G – SFS1008G Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS 2 TO-263AB (D PAK) SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: I2103 SFS1001G – SFS1008G Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: I2103
SFS1005GHMNG 价格&库存

很抱歉,暂时无法提供与“SFS1005GHMNG”相匹配的价格&库存,您可以联系我们找货

免费人工找货