ES15GLWHRVG

ES15DLW – ES15JLW Taiwan Semiconductor 1.5A, 200V - 600V Super Fast Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction Ideal for automated placement Low profile package Low power loss, high efficiency Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 1.5 A VRRM 200 - 600 V IFSM 40 A TJ MAX 150 °C Package SOD-123W Configuration Single die ● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application MECHANICAL DATA ● ● ● ● ● ● Case: SOD-123W Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.016g (approximately) SOD-123W ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device ES15DLW ES15GLW ES15JLW ES15D ES15G ES15J UNIT Repetitive peak reverse voltage VRRM 200 400 600 V Reverse voltage, total rms value VR(RMS) 140 280 420 V Forward current Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Junction temperature IF 1.5 A IFSM 40 A TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: C2103 ES15DLW – ES15JLW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 26 °C/W Junction-to-ambient thermal resistance RӨJA 76 °C/W Junction-to-case thermal resistance RӨJC 27 °C/W Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS ES15DLW Forward voltage (1) ES15GLW ES15JLW Reverse current @ rated VR TYP MAX UNIT IF = 0.75A, TJ = 25°C 0.80 - V IF = 1.50A, TJ = 25°C 0.85 0.95 V IF = 0.75A, TJ = 125°C 0.66 - V IF = 1.50A, TJ = 125°C 0.73 0.80 V IF = 0.75A, TJ = 25°C 0.87 - V 0.95 1.30 V 0.72 - V IF = 1.50A, TJ = 125°C 0.80 1.05 V IF = 0.75A, TJ = 25°C 1.06 - V IF = 1.50A, TJ = 25°C 1.18 1.70 V IF = 0.75A, TJ = 125°C 0.84 - V IF = 1.50A, TJ = 125°C 0.97 1.30 V - 1 µA - 150 µA 24 - pF 21 - pF 20 - pF - 35 ns IF = 1.50A, TJ = 25°C IF = 0.75A, TJ = 125°C TJ = 25°C (2) SYMBOL VF IR TJ = 125°C ES15DLW Junction capacitance ES15GLW 1MHz, VR = 4.0V CJ ES15JLW Reverse recovery time IF = 0.5A , IR = 1.0A Irr = 0.25A trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING ES15xLW SOD-123W 10,000 / Tape & Reel Notes: 1. “x” defines voltage from 200V(ES15DLW) to 600V(ES15JLW) 2 Version: C2103 ES15DLW – ES15JLW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 100 2 CAPACITANCE (pF) A 1.5 1 0.5 f=1.0MHz Vsig=50mVp-p 1 0 25 50 75 100 125 10 100 LEAD TEMPERATURE (°C) REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics 1 ES15DLW TJ=125°C 0.1 0.01 TJ=25°C 0.001 10 1 150 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) 10 20 30 40 50 60 70 80 90 100 10 ES15DLW UF1DLW 1 10 TJ=125°C TJ=125°C 0.1 TJ=25°C 1 0.01 Pulse width 0.001 0.1 0.3 0.4 100 TJ=25°C (A) AVERAGE FORWARD CURRENT (A) ES15DLW 0.4 0.5 0.5 0.6 0.7 0.6 0.8 0.7 Pulse width 300μs duty cycle 0.8 1%0.9 1 1.1 0.9 1 1.1 1.2 1.3 1.4 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 3 Version: C2103 1.2 ES15DLW – ES15JLW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Typical Junction Capacitance Fig.6 Typical Reverse Characteristics INSTANTANEOUS REVERSE CURRENT (μA) 100 CAPACITANCE (pF) A ES15GLW 10 f=1.0MHz Vsig=50mVp-p 1 1 10 10 ES15GLW TJ=125°C 1 0.1 0.01 TJ=25°C 0.001 10 100 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) REVERSE VOLTAGE (V) Fig.7 Typical Forward Characteristics 10 ES15GLW UF1DLW 1 10 TJ=125°C TJ=25°C TJ=125°C 0.1 (A) INSTANTANEOUS FORWARD CURRENT (A) 100 TJ=25°C 1 0.01 Pulse width 0.001 0.1 0.3 0.4 0.5 0.6 0.4 0.5 0.6 0.7 0.8 0.9 0.7 1 Pulse width 300μs 0.81% duty 0.9 cycle 1 1.1 1.2 1.1 1.2 1.3 1.4 1.5 1.6 FORWARD VOLTAGE (V) 4 Version: C2103 ES15DLW – ES15JLW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.8 Typical Junction Capacitance Fig.9 Typical Reverse Characteristics INSTANTANEOUS REVERSE CURRENT (μA) 100 CAPACITANCE (pF) ES15JLW 10 f=1.0MHz Vsig=50mVp-p 1 1 10 10 ES15JLW TJ=125°C 1 0.1 0.01 TJ=25°C 0.001 10 100 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) REVERSE VOLTAGE (V) Fig.10 Typical Forward Characteristics 10 ES15JLW UF1DLW 1 10 TJ=125°C TJ=25°C TJ=125°C 0.1 (A) INSTANTANEOUS FORWARD CURRENT (A) 100 1 0.01 TJ=25°C 0.6 0.7 Pulse width Pulse width 300μs 1% duty cycle 0.8 0.9 1 1.1 1 1.2 1.4 0.001 0.1 0.3 0.4 0.4 0.6 0.5 0.8 1.6 1.8 1.2 2 FORWARD VOLTAGE (V) 5 Version: C2103 ES15DLW – ES15JLW Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS SOD-123W SUGGESTED PAD LAYOUT MARKING DIAGRAM 6 P/N = Marking Code YW = Date Code F = Factory Code Version: C2103 ES15DLW – ES15JLW Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: C2103