MBRS2060CT MNG

MBRS2035CT – MBRS20150CT Taiwan Semiconductor 20A, 35V - 150V Schottky Barrier Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Low power loss, high efficiency Ideal for automated placement Guard ring for overvoltage protection High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 20 A VRRM 35 - 150 V IFSM 150 A TJ MAX 150 APPLICATIONS °C 2 Package TO-263AB (D PAK) Configuration Dual dies ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters MECHANICAL DATA ● ● ● ● ● ● 2 Case: TO-263AB (D PAK) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.37g (approximately) 2 TO-263AB (D PAK) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Peak repetitive reverse (1) surge current Peak repetitive forward current (Rated VR, Square wave, 20KHz) Critical rate of rise of offstate voltage Notes: 1. tp = 2.0μs, 1.0KHz MBRS SYMBOL 2035 CT MBRS 2035CT MBRS 2045 CT MBRS 2045CT MBRS 2050 CT MBRS 2050CT MBRS 2060 CT MBRS 2060CT MBRS MBRS MBRS 2090 20100 20150 UNIT CT CT CT MBRS MBRS MBRS 2090CT 20100CT 20150CT VRRM 35 45 50 60 90 100 150 V VR(RMS) 24 31 35 42 63 70 105 V IF 20 A IFSM 150 A IRRM 1 0.5 A IFRM 20 A dv/dt 10,000 V/μs 1 Version: N2103 MBRS2035CT – MBRS20150CT Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER MBRS MBRS MBRS MBRS MBRS MBRS SYMBOL 2035 2045 2050 2060 2090 20100 CT CT CT CT CT CT MBRS 20150 UNIT CT Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C THERMAL PERFORMANCE PARAMETER Junction-to-case thermal resistance Junction-to-case thermal resistance SYMBOL TYP UNIT RӨJC 1.5 °C/W RӨJC 2 °C/W MBRS2035CT MBRS2045CT MBRS2050CT MBRS2060CT MBRS2090CT MBRS20100CT MBRS20150CT ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per (1) diode CONDITIONS MBRS2035CT MBRS2045CT MBRS2050CT MBRS2060CT MBRS2090CT MBRS20100CT MBRS20150CT MBRS2035CT MBRS2045CT MBRS2050CT MBRS2060CT MBRS2090CT MBRS20100CT MBRS20150CT MBRS2035CT MBRS2045CT MBRS2050CT MBRS2060CT MBRS2090CT MBRS20100CT MBRS20150CT MBRS2035CT MBRS2045CT MBRS2050CT MBRS2060CT MBRS2090CT MBRS20100CT MBRS20150CT SYMBOL IF = 10A, TJ = 25°C IF = 20A, TJ = 25°C VF IF = 10A, TJ = 125°C IF = 20A, TJ = 125°C 2 TYP MAX UNIT - 0.65 V - 0.80 V - 0.85 V - 0.99 V - 0.84 V - 0.95 V - 0.95 V - 1.23 V - 0.57 V - 0.70 V - 0.75 V - 0.87 V - 0.72 V - 0.85 V - 0.85 V - 1.10 V Version: N2103 MBRS2035CT – MBRS20150CT Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Reverse current @ rated VR (2) per diode CONDITIONS MBRS2035CT MBRS2045CT MBRS2050CT MBRS2060CT TJ = 25°C MBRS2090CT MBRS20100CT MBRS20150CT MBRS2035CT MBRS2045CT MBRS2050CT MBRS2060CT TJ = 125°C MBRS2090CT MBRS20100CT MBRS20150CT SYMBOL TYP MAX UNIT - 100 µA - 15 mA - 10 mA - 5 mA IR Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) MBRS20xCT PACKAGE 2 TO-263AB (D PAK) PACKING 800 / Tape & Reel Notes: 1. “x” defines voltage from 35V(MBRS2035CT) to 150V(MBRS20150CT) 3 Version: N2103 MBRS2035CT – MBRS20150CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 20 CAPACITANCE (pF) 15 10 MBRS2035CT - 2045CT 1000 MBRS2050CT - 20150CT 5 0 f=1.0MHz Vsig=50mVp-p 100 25 50 75 100 125 150 0.1 1 CASE TEMPERATURE (°C) TJ=75°C INSTANTANEOUS FORWARD CURRENT (A) 1 0.1 MBRS2035CT-2045CT MBRS2050CT-20150CT 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 80 90 100 100 10 10 TUF1DLW J=125°C 1 TJ=125°C 0.1 TJ=25°C TJ=25°C 2035CT-2045CT 2050CT-2060CT 2090CT-20150CT Pulse width 300μs 1% duty cycle Pulse width 1 0.01 0.1 0.001 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 180 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 TJ=125°C 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 10 10 (A) AVERAGE FORWARD CURRENT (A) 25 8.3ms single half sine wave 150 120 90 60 30 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 Version: N2103 1.2 MBRS2035CT – MBRS20150CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 100 10 1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: N2103 MBRS2035CT – MBRS20150CT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS 2 TO-263AB (D PAK) SUGGESTED PAD LAYOUT MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: N2103 MBRS2035CT – MBRS20150CT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: N2103