MBR20L100CTHC0G

MBR20L100CT – MBR20L120CT Taiwan Semiconductor 20A, 100V - 120V Low VF Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters PARAMETER VALUE UNIT IF 20 A VRRM 100 - 120 V IFSM 150 A TJ MAX 150 °C Package TO-220AB Configuration Dual dies MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.90g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device MBR20L100CT MBR20L120CT UNIT MBR20L100CT MBR20L120CT Repetitive peak reverse voltage VRRM 100 120 V Reverse voltage, total rms value VR(RMS) 70 84 V Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load (1) Peak repetitive reverse surge current Peak repetitive forward current (Rated VR, Square wave, 20KHz) Critical rate of rise of off-state voltage IF 20 A IFSM 150 A IRRM 1 A IFRM 20 A dv/dt 10,000 V/μs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C Notes: 1. tp = 2.0μs, 1.0KHz 1 Version: H2104 MBR20L100CT – MBR20L120CT Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case thermal resistance MBR20L100CT RӨJC 2.8 °C/W Junction-to-case thermal resistance MBR20L120CT RӨJC 3.0 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS MBR20L100CT MBR20L120CT MBR20L100CT Forward voltage per diode (1) MBR20L120CT MBR20L100CT MBR20L120CT MBR20L100CT MBR20L120CT Reverse current @ rated VR (2) per diode MBR20L100CT MBR20L120CT MBR20L100CT MBR20L120CT SYMBOL IF = 10A, TJ = 25°C IF = 20A, TJ = 25°C VF IF = 10A, TJ = 125°C IF = 20A, TJ = 125°C TJ = 25°C IR TJ = 125°C TYP MAX UNIT 0.72 0.75 V 0.78 0.83 V 0.81 0.85 V 0.86 0.90 V 0.58 0.68 V 0.63 0.72 V 0.67 0.75 V 0.73 0.80 V - 20 µA - 15 mA - 10 mA Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBR20LxCT TO-220AB 50 / Tube MBR20LxCTH TO-220AB 50 / Tube Notes: 1. “x” defines voltage from 100V(MBR20L100CT) to 120V(MBR20L120CT) 2. “H” means AEC-Q101 qualified 2 Version: H2104 MBR20L100CT – MBR20L120CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 MBR20L100CT 20 CAPACITANCE (pF) 15 10 MBR20L120CT 1000 MBR20L100CT MBR20L120CT 100 5 0 f=1.0MHz Vsig=50mVp-p 10 25 50 75 100 125 150 0.1 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C 100 MBR20L100CT MBR20L120CT 1 0.1 TJ=25°C 0.01 10 20 30 40 50 60 70 80 90 100 100 10 10 UF1DLW 1 TJ=125°C TJ=125°C MBR20L100CT MBR20L120CT 1 0.01 0.1 0.001 0.1 TJ=25°C TJ=25°C 0.1 Pulse width 300μs 1% duty cycle Pulse width 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.3 0.4 0.5 0.5 0.7 0.9 0.6 0.7 0.8 1.1 0.9 1.3 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 175 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (µA) Fig.4 Typical Forward Characteristics 10000 10 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 1000 10 (A) AVERAGE FORWARD CURRENT (A) 25 150 8.3ms single half sine wave 125 100 MBR20L100CT 75 50 MBR20L120CT 25 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: H2104 1.2 MBR20L100CT – MBR20L120CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 100 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 4 Version: H2104 MBR20L100CT – MBR20L120CT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-220AB MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: H2104 MBR20L100CT – MBR20L120CT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: H2104