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SRF1040HC0G

SRF1040HC0G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    TO-220-3

  • 描述:

    DIODE ARRAY SCHOTT 40V ITO220AB

  • 数据手册
  • 价格&库存
SRF1040HC0G 数据手册
SRF1020 – SRF10200 Taiwan Semiconductor 10A, 20V - 200V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability UL Recognized File # E-326243 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 10 A VRRM 20 - 200 V IFSM 120 A TJ MAX 125, 150 °C APPLICATIONS Package ITO-220AB Configuration Dual dies ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters MECHANICAL DATA ● ● ● ● ● ● ● Case: ITO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.70g (approximately) ITO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Junction temperature Storage temperature SYMBOL SRF SRF SRF SRF SRF SRF SRF SRF SRF 1020 1030 1040 1050 1060 1090 10100 10150 10200 SRF SRF SRF SRF SRF SRF SRF SRF SRF 1020 1030 1040 1050 1060 1090 10100 10150 10200 UNIT VRRM 20 30 40 50 60 90 100 150 200 V VR(RMS) 14 21 28 35 42 63 70 105 140 V IF 10 A IFSM 120 A TJ -55 to +125 -55 to +150 TSTG -55 to +150 1 °C °C Version: L2105 SRF1020 – SRF10200 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL SRF1020 SRF1030 SRF1040 SRF1050 SRF1060 SRF1090 SRF10100 SRF10150 SRF10200 Junction-to-case thermal resistance TYP UNIT 3.5 °C/W 4.0 °C/W RӨJC ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT - 0.55 V - 0.70 V - 0.90 V - 1.00 V - 500 µA - 100 µA - 15 mA - 10 mA - - mA SRF1020 SRF1030 SRF1040 SRF1050 Forward voltage per diode (1) SRF1060 IF = 5A,TJ = 25°C VF SRF1090 SRF10100 SRF10150 SRF10200 SRF1020 SRF1030 SRF1040 Reverse current @ rated VR per diode (2) SRF1050 SRF1060 TJ = 25°C IR SRF1090 SRF10100 SRF10150 SRF10200 SRF1020 SRF1030 SRF1040 Reverse current @ rated VR per diode (2) SRF1050 SRF1060 TJ = 100°C IR SRF1090 SRF10100 SRF10150 SRF10200 2 Version: L2105 SRF1020 – SRF10200 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT - - mA - 5 mA SRF1020 SRF1030 SRF1040 Reverse current @ rated VR per diode (2) SRF1050 SRF1060 TJ = 125°C IR SRF1090 SRF10100 SRF10150 SRF10200 Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING SRF10x ITO-220AB 50 / Tube SRF10xH ITO-220AB 50 / Tube Notes: 1. “x” defines voltage from 20V(SRF1020) to 200V(SRF10200) 2. “H” means AEC-Q101 qualified 3 Version: L2105 SRF1020 – SRF10200 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 SRF1060 - 10200 CAPACITANCE (pF) 10 5 SRF1020 - 1050 100 f=1.0MHz Vsig=50mVp-p 10 0 25 50 75 100 125 0.1 150 1 LEAD TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=100°C 1 0.1 TJ=25°C 0.01 10 20 30 40 50 60 70 80 100 Fig.4 Typical Forward Characteristics 100 90 100 100 10 UF1DLW 1 SRF1020-1040 10 SRF1050-1060 TJ=125°C TJ=25°C 0.1 1 SRF10150-10200 0.01 SRF1090-10100 0.1 0.001 0.0 0.3 0.2 0.4 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Pulse width 300μs Pulse width 1% duty cycle 0.4 0.5 0.60.6 0.7 0.80.8 1.0 0.9 11.2 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 140 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.3 Typical Reverse Characteristics 10 10 REVERSE VOLTAGE (V) 120 8.3ms single half sine wave 100 80 60 40 20 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 (A) AVERAGE FORWARD CURRENT (A) 15 Version: L2105 1.2 SRF1020 – SRF10200 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: L2105 SRF1020 – SRF10200 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS ITO-220AB MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: L2105 SRF1020 – SRF10200 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: L2105
SRF1040HC0G 价格&库存

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