SS35HM6G

SS32 – SS320 Taiwan Semiconductor 3A, 20V - 200V Schottky Barrier Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Low power loss, high efficiency Ideal for automated placement Guard ring for overvoltage protection High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● PARAMETER VALUE UNIT IF 3 A VRRM 20 - 200 V IFSM 75, 100 A TJ MAX 125, 150 °C Package DO-214AB (SMC) Configuration Single die Switching mode power supply (SMPS) Adapters Lighting application Converter MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.210g (approximately) DO-214AB (SMC) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SS 32 SS 32 SS 33 SS 33 SS 34 SS 34 SS 35 SS 35 SS 36 SS 36 SS 39 SS 39 SS 310 SS 310 SS 315 SS 315 SS UNIT 320 SS 320 VRRM 20 30 40 50 60 90 100 150 200 V VR(RMS) 14 21 28 35 42 63 70 105 140 V SYMBOL Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Critical rate of rise of offstate voltage Junction temperature Storage temperature IF IFSM 3 100 75 dV/dt TJ A 10,000 - 55 to +125 TSTG V/µs - 55 to +150 - 55 to +150 1 A °C °C Version: O2102 SS32 – SS320 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 17 °C/W Junction-to-ambient thermal resistance RӨJA 55 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS (1) Reverse current @ rated VR (2) SS32 SS33 SS34 SS35 SS36 SS39 SS310 SS315 SS320 SS32 SS33 SS34 SS35 SS36 SS39 SS310 SS315 SS320 SS32 SS33 SS34 SS35 SS36 SS39 SS310 SS315 SS320 SS32 SS33 SS34 SS35 SS36 SS39 SS310 SS315 SS320 SS32 SS33 SS34 SS35 SS36 SS39 SS310 SS315 SS320 SYMBOL IF = 3A, TJ = 25°C TYP MAX UNIT - 0.50 V - 0.75 V - 0.85 V - 0.95 V - 0.40 V - 0.65 V - 0.70 V - 0.80 V - 0.5 mA - 0.1 mA - 10 mA - 5 mA - - mA - - mA - - mA - 0.5 mA VF IF = 3A, TJ = 100°C TJ = 25°C TJ = 100°C IR TJ = 125°C Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms 2 Version: O2102 SS32 – SS320 Taiwan Semiconductor ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING SS3x DO-214AB (SMC) 3,000 / Tape & Reel Notes: 1. “x” defines voltage from 20V(SS32) to 200V(SS320) 3 Version: O2102 SS32 – SS320 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 SS35 - SS320 SS32 - SS34 SS35 - SS36 3 CAPACITANCE (pF) 2 SS32 - SS34 1 100 SS39 - SS320 f=1.0MHz Vsig=50mVp-p 10 0 25 50 75 100 125 0.1 150 1 LEAD TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C 10 1 0.1 TJ=25°C TJ=75°C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 10 10 SS35 - SS36 UF1DLW SS32 - SS34 1 TJ=125°C TJ=25°C SS39 - SS310 1 0.1 SS315 - SS320 0.01 0.1 0.001 0.0 0.2 0.3 0.4 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Pulse width 300μs 1% duty cycle Pulse width 0.4 0.5 0.6 0.8 0.6 0.7 0.8 1.0 0.9 1.2 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 120 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 1000 100 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics SS32 - SS34 SS35 - SS320 10 (A) AVERAGE FORWARD CURRENT (A) 4 8.3ms single half sine wave 100 80 60 SS32 - SS34 40 20 SS35 - SS320 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 Version: O2102 1.2 SS32 – SS320 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Characteristics TRANSIENT THERMAL IMPEDANCE (°C/W) 100 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: O2102 SS32 – SS320 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AB (SMC) SUGGESTED PAD LAYOUT MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: O2102 SS32 – SS320 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: O2102