ESGLWHRVG

ESDLW – ESJLW Taiwan Semiconductor 0.8A, 200V - 600V Super Fast Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction Ideal for automated placement Low profile package Low power loss, high efficiency Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 0.8 A VRRM 200 - 600 V IFSM 20 A TJ MAX 150 °C APPLICATIONS Package SOD-123W Configuration Single die ● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application MECHANICAL DATA ● ● ● ● ● ● Case: SOD-123W Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.016g (approximately) SOD-123W ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device ESDLW ESGLW ESJLW ESDLW ESGLW ESJLW UNIT Repetitive peak reverse voltage VRRM 200 400 600 V Reverse voltage, total rms value VR(RMS) 140 280 420 V Forward current Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Junction temperature IF 0.8 A IFSM 20 A TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: D2103 ESDLW – ESJLW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 34 °C/W Junction-to-ambient thermal resistance RӨJA 88 °C/W Junction-to-case thermal resistance RӨJC 35 °C/W Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS ESDLW Forward voltage (1) ESGLW ESJLW Reverse current @ rated VR TYP MAX UNIT IF = 0.4A, TJ = 25°C 0.80 - V IF = 0.8A, TJ = 25°C 0.85 0.95 V IF = 0.4A, TJ = 125°C 0.65 - V IF = 0.8A, TJ = 125°C 0.72 0.80 V IF = 0.4A, TJ = 25°C 0.88 - V 0.96 1.30 V 0.69 - V IF = 0.8A, TJ = 125°C 0.77 1.05 V IF = 0.4A, TJ = 25°C 1.03 - V IF = 0.8A, TJ = 25°C 1.14 1.70 V IF = 0.4A, TJ = 125°C 0.82 - V IF = 0.8A, TJ = 125°C 0.94 1.30 V - 1 µA - 150 µA 21 - pF 20 - pF 19 - pF - 35 ns IF = 0.8A, TJ = 25°C IF = 0.4A, TJ = 125°C TJ = 25°C (2) SYMBOL VF IR TJ = 125°C ESDLW Junction capacitance ESGLW 1MHz, VR = 4.0V CJ ESJLW Reverse recovery time IF = 0.5A , IR = 1.0A Irr = 0.25A trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING ESxLW SOD-123W 10,000 / Tape & Reel Notes: 1. “x” defines voltage from 200V(ESDLW) to 600V(ESJLW) 2 Version: D2103 ESDLW – ESJLW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 100 1 0.8 CAPACITANCE (pF) A 0.6 0.4 0.2 0 f=1.0MHz Vsig=50mVp-p 1 25 50 75 100 125 150 LEAD TEMPERATURE (°C) 1 10 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics 1 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) 10 ESDLW TJ=125°C 0.1 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 80 90 10 10 ESDLW PERCENT OF RATED PEAK REVERSE VOLTAGE (%) UF1DLW 1 TTJ=125°C J=125°C 1 TJ=25°C 0.1 TJ=25°C 0.01 Pulse width 0.001 0.3 0.1 0.4 100 100 (A) AVERAGE FORWARD CURRENT (A) ESDLW 0.4 0.6 0.5 0.6 0.8 Pulse width 300μs 1% duty 0.8 0.9cycle1 1.1 0.7 1 1.2 1.4 FORWARD VOLTAGE (V) 3 Version: D2103 1.2 ESDLW – ESJLW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Typical Junction Capacitance Fig.6 Typical Reverse Characteristics INSTANTANEOUS REVERSE CURRENT (μA) 100 CAPACITANCE (pF) A ESGLW 10 f=1.0MHz Vsig=50mVp-p 1 1 10 10 ESGLW TJ=125°C 1 0.1 0.01 TJ=25°C 0.001 10 100 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) REVERSE VOLTAGE (V) 10 10 ESGLW UF1DLW 1 TJ=125°C TJ=125°C TJ=25°C 0.1 1 (A) INSTANTANEOUS FORWARD CURRENT (A) Fig.7 Typical Forward Characteristics TJ=25°C 0.01 Pulse width 0.001 0.1 0.3 0.4 0.4 0.6 0.5 0.8 0.6 0.7 1 Pulse width 300μs 1% duty 0.8 0.9 cycle 1 1.1 1.2 1.4 1.2 1.6 FORWARD VOLTAGE (V) 4 Version: D2103 ESDLW – ESJLW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.8 Typical Junction Capacitance Fig.9 Typical Reverse Characteristics INSTANTANEOUS REVERSE CURRENT (μA) 100 CAPACITANCE (pF) ESJLW 10 f=1.0MHz Vsig=50mVp-p 1 1 10 10 ESJLW TJ=125°C 1 0.1 0.01 TJ=25°C 0.001 10 100 REVERSE VOLTAGE (V) 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 10 ESJLW UF1DLW 1 TJ=125°C TJ=125°C 0.1 1 TJ=25°C (A) INSTANTANEOUS FORWARD CURRENT (A) Fig.10 Typical Forward Characteristics TJ=25°C 0.01 Pulse width 0.001 0.1 0.3 0.4 0.4 0.6 0.5 0.8 0.6 1 0.7 1.2 Pulse width 300μs 1% duty 0.8 0.9 cycle1 1.1 1.4 1.6 1.8 1.2 2 FORWARD VOLTAGE (V) 5 Version: D2103 ESDLW – ESJLW Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS SOD-123W SUGGESTED PAD LAYOUT MARKING DIAGRAM 6 P/N = Marking Code YW = Date Code F = Factory Code Version: D2103 ESDLW – ESJLW Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: D2103