RS3MB-T R5G

RS3DB-T – RS3MB-T Taiwan Semiconductor 3A, 200V - 1000V Fast Recovery Surface Mount Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction Ideal for automated placement Low reverse leakage Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● General purpose PARAMETER VALUE UNIT IF 3 A VRRM 200 - 1000 V IFSM 80 A TJ MAX 150 °C Package DO-214AA (SMB) Configuration Single die MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1 whisker test Polarity: Indicated by cathode band Weight: 0.090g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL RS3DB-T RS3GB-T RS3JB-T RS3KB-T RS3MB-T UNIT Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward t = 8.3ms current single half sine-wave superimposed on t = 1.0ms rated load Junction temperature Storage temperature RS3DB RS3GB RS3JB RS3KB RS3MB VRRM 200 400 600 800 1000 V VR(RMS) 140 280 420 560 700 V IF 3 A 80 A 224 A TJ -55 to +150 °C TSTG -55 to +150 °C IFSM 1 Version: C2102 RS3DB-T – RS3MB-T Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 20 °C/W Junction-to-ambient thermal resistance RӨJA 78 °C/W Junction-to-case thermal resistance RӨJC 26 °C/W Thermal Performance Note: Units mounted on PCB (10mm x 10mm Cu pad test board) ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT 0.94 - V 1.02 1.30 V 0.78 - V IF = 3.0A, TJ =125°C 0.87 1.17 V IF = 1.5A, TJ = 25°C 0.99 - V 1.10 1.30 V 0.80 - V IF = 3.0A, TJ =125°C 0.90 1.16 V IF = 1.5A, TJ = 25°C 1.03 - V 1.13 1.30 V 0.83 - V 0.94 1.14 V - 5 µA - 150 µA - 150 ns - 250 ns - 500 ns 50 - pF IF = 1.5A, TJ = 25°C RS3DB-T RS3GB-T (1) Forward voltage RS3JB-T IF = 3.0A, TJ = 25°C IF = 1.5A, TJ = 125°C IF = 3.0A, TJ = 25°C IF = 1.5A, TJ = 125°C RS3KB-T IF = 3.0A, TJ = 25°C RS3MB-T IF = 1.5A, TJ = 125°C VF VF VF IF = 3.0A, TJ =125°C Reverse current @ rated VR (2) Reverse recovery time Junction capacitance TJ = 25°C TJ = 125°C RS3DB-T RS3GB-T I = 0.5A, IR = 1.0A RS3JB-T F Irr = 0.25A RS3KB-T RS3MB-T 1MHz, VR = 4.0V IR trr CJ Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING RS3xB-T DO-214AA (SMB) 3,000 / Tape & Reel Notes: 1. “x” defines voltage from 200V(RS3DB-T) to 1000V(RS3MB-T) 2 Version: C2102 RS3DB-T – RS3MB-T Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 100 3 CAPACITANCE (pF) 2 1 10 RS3DB-T to RS3GB-T RS3JB-T RS3KB-T - RS3MB-T f=1.0MHz Vsig=50mVp-p 0 50 75 100 125 1 150 1 10 LEAD TEMPERATURE (°C) Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.3 Typical Reverse Characteristics 1000 RS3DB-T – RS3GB-T 100 TJ=150°C 10 1 TJ=125°C 0.1 0.01 TJ=25°C 0.001 TJ=-55°C 0.0001 10 20 30 40 50 60 70 80 90 100 10 10 RS3DB-T – RS3GB-T UF1DLW TJ=150°C 1 TJ=125°C TJ=125°C TJ=-55°C 0.01 0.001 0.1 0.40.3 Pulse width 300μs Pulse width 1% duty cycle 0.4 0.6 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) TJ=150°C TJ=125°C 1 0.1 TJ=25°C 0.01 TJ=-55°C 0.001 10 20 30 40 50 60 70 80 90 0.7 1 0.8 1.20.9 11.4 1.1 1.2 1 1.1 1.6 1.2 Fig.6 Typical Forward Characteristics 1000 10 0.5 0.80.6 FORWARD VOLTAGE (V) Fig.5 Typical Reverse Characteristics 100 TJ=25°CTJ=25°C 10.1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) RS3JB-T 100 REVERSE VOLTAGE (V) (A) 25 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 10 RS3JB-T UF1DLW T =150°C 1 J TJ=125°C TJ=125°C TJ=25°C 0.1 1 TJ=25°C 0.01 0.001 0.1 0.3 0.4 (A) AVERAGE FORWARD CURRENT (A) 4 TJ=-55°C Pulse width Pulse width 300μs 1% duty cycle 0.4 0.6 0.5 0.8 0.6 1 0.7 0.8 1.2 0.9 1.4 FORWARD VOLTAGE (V) 3 Version: C2102 RS3DB-T – RS3MB-T Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) TJ=150°C 100 10 TJ=125°C 1 TJ=25°C 0.1 0.01 TJ=-55°C 0.001 10 20 30 40 50 60 70 80 90 100 10 10 RS3KB-T – RS3MB-T UF1DLW TJ=150°C 1 0.1 1 T =125°C TJ=125°CJ TJ=25°C TJ=25°C (A) RS3KB-T – RS3MB-T Fig.8 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) 1000 TJ=-55°C 0.01 0.001 0.1 0.3 0.4 Pulse widthPulse 300μs width 1% duty cycle 0.4 0.6 0.5 0.8 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.6 1 0.7 0.8 1.2 0.9 1.4 1 1.6 1.1 FORWARD VOLTAGE (V) Fig.9 Typical Transient Thermal Impedance 100 TRANSIENT THERMAL IMPEDANCE (°C/W) INSTANTANEOUS REVERSE CURRENT (μA) Fig.7 Typical Reverse Characteristics 10 1 0.1 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 PULSE DURATION (s) 4 Version: C2102 1.2 RS3DB-T – RS3MB-T Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AA (SMB) SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: C2102 RS3DB-T – RS3MB-T Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: C2102