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ES1JLHRTG

ES1JLHRTG

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    Sub-SMA

  • 描述:

    DIODE GEN PURP 600V 1A SUB SMA

  • 详情介绍
  • 数据手册
  • 价格&库存
ES1JLHRTG 数据手册
ES1AL – ES1JL Taiwan Semiconductor 1A, 50V - 600V Super Fast Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction Ideal for automated placement Low profile Package Low power loss, high efficiency Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 1 A VRRM 50 - 600 V IFSM 30 A TJ MAX 150 °C APPLICATIONS Package Sub SMA Configuration Single die ● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application MECHANICAL DATA ● ● ● ● ● ● Case: Sub SMA Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.019g (approximately) Sub SMA ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device ES 1AL ES 1BL ES 1CL ES 1DL ES 1FL ES 1GL ES 1HL ES UNIT 1JL EAL EBL ECL EDL EFL EGL EHL EJL Repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Reverse voltage, total rms value VR(RMS) 35 70 105 140 210 280 350 420 V Forward current Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Junction temperature IF 1 A IFSM 30 A TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: L2103 ES1AL – ES1JL Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 35 °C/W Junction-to-ambient thermal resistance RӨJA 85 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS ES1AL ES1BL ES1CL ES1DL ES1FL ES1GL ES1HL ES1JL (1) Reverse current @ rated VR TJ = 25°C (2) Junction capacitance IF = 1A, TJ = 25°C Reverse recovery time 1MHz, VR = 4.0V IF = 0.5A, IR = 1.0A, Irr = 0.25A TYP MAX UNIT - 0.95 V - 1.30 V - 1.70 V - 5 µA - 100 µA 10 - pF 8 - pF - 35 ns VF IR TJ = 125°C ES1AL ES1BL ES1CL ES1DL ES1FL ES1GL ES1HL ES1JL SYMBOL CJ trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING ES1xL Sub SMA 10,000 / Tape & Reel Notes: 1. “x” defines voltage from 50V(ES1AL) to 600V(ES1JL) 2 Version: L2103 ES1AL – ES1JL Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 14 12 ES1AL-ES1DL CAPACITANCE (pF) 1 10 8 ES1FL - ES1JL 6 4 2 0 25 50 75 100 125 f=1.0MHz Vsig=50mVp-p 0 150 0.1 1 LEAD TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) 100 TJ=125°C 10 TJ=75°C 1 TJ=25°C 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 10 ES1FL - ES1GL ES1AL - ES1DL UF1DLW 1 TJ=125°C 1 0.1 TJ=25°C ES1HL - ES1JL 0.01 0.1 0.001 0.4 0.6 0.8 1.0 0.3 0.4 0.5 Pulse width 300μs 1% duty cycle Pulse width 1.2 1.4 1.6 1.8 2.0 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) 2.2 1 1.1 Fig.5 Maximum Non-Repetitive Forward Surge Current 40 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (uA) Fig.4 Typical Forward Characteristics 1000 10 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 0.1 10 (A) AVERAGE FORWARD CURRENT (A) 2 8.3ms single half sine wave 30 20 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: L2103 1.2 ES1AL – ES1JL Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: L2103 ES1AL – ES1JL Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS Sub SMA SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: L2103 ES1AL – ES1JL Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: L2103
ES1JLHRTG
物料型号:ES1AL – ES1JL,这是一系列由台湾半导体公司生产的超快速表面贴装整流器。

器件简介:这些整流器具有玻璃钝化芯片结、适合自动化放置、低轮廓封装、低功耗高效率、符合RoHS标准和无卤素等特点。

引脚分配:文档中没有明确提供引脚分配的详细信息,但通常整流器会有阳极和阴极两个引脚。

参数特性:包括正向电流(IF)为1A,反向峰值重复电压(VRRM)从50V至600V不等,正向浪涌电流(IFSM)为30A,最大结温(TJMAX)为150°C。

功能详解:这些整流器适用于DC-DC转换器、开关模式转换器和逆变器、以及自由轮应用。

应用信息:适用于DC-DC转换器、开关模式转换器和逆变器、自由轮应用。

封装信息:封装类型为Sub SMA,封装材料符合UL 94V-0可燃性等级,引脚为镀锡的,可焊接。
ES1JLHRTG 价格&库存

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