MBR30150CTHC0G

MBR3035CT – MBR30150CT Taiwan Semiconductor 30A, 35V - 150V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters PARAMETER VALUE UNIT IF 30 A VRRM 35 - 150 V IFSM 200 A TJ MAX 150 °C Package TO-220AB Configuration Dual dies MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.90g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) MBR MBR MBR MBR PARAMETER SYMBOL 3035 3045 3050 3060 CT CT CT CT MBR MBR MBR MBR Marking code on the device 3035 3045 3050 3060 CT CT CT CT Repetitive peak reverse voltage VRRM 35 45 50 60 Reverse voltage, total rms value VR(RMS) Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Peak repetitive reverse (1) surge current Peak repetitive forward current (Rated VR, Square wave, 20KHz) Critical rate of rise of off-state voltage Junction temperature IF 30 A IFSM 200 A Storage temperature 24 31 IRRM 35 MBR MBR MBR 3090 30100 30150 UNIT CT CT CT MBR MBR MBR 3090 30100 30150 CT CT CT 90 100 150 V 42 1 63 70 0.5 105 V A IFRM 30 A dv/dt 10,000 V/μs TJ -55 to +150 °C TSTG -55 to +150 °C Notes: 1. tp = 2.0μs, 1.0KHz 1 Version: K2104 MBR3035CT – MBR30150CT Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-case thermal resistance Junction-to-case thermal resistance MBR3035CT MBR3045CT MBR3050CT MBR3060CT MBR3090CT MBR30100CT MBR30150CT SYMBOL TYP UNIT RӨJC 1.0 °C/W RӨJC 1.5 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per (1) diode Reverse current @ (2) rated VR per diode CONDITIONS MBR3035CT MBR3045CT MBR3050CT MBR3060CT MBR3090CT MBR30100CT MBR30150CT MBR3035CT MBR3045CT MBR3050CT MBR3060CT MBR3090CT MBR30100CT MBR30150CT MBR3035CT MBR3045CT MBR3050CT MBR3060CT MBR3090CT MBR30100CT MBR30150CT MBR3035CT MBR3045CT MBR3050CT MBR3060CT MBR3090CT MBR30100CT MBR30150CT MBR3035CT MBR3045CT MBR3050CT MBR3060CT MBR3090CT MBR30100CT MBR30150CT MBR3035CT MBR3045CT MBR3050CT MBR3060CT MBR3090CT MBR30100CT MBR30150CT SYMBOL IF = 15A, TJ = 25°C IF = 30A, TJ = 25°C VF IF = 15A, TJ = 125°C IF = 30A, TJ = 125°C TJ = 25°C TYP MAX UNIT - 0.70 V - 0.77 V - 0.84 V - 0.95 V - 0.82 V - - V - 0.94 V - 1.02 V - 0.60 V - 0.67 V - 0.70 V - 0.92 V - 0.73 V - - V - 0.82 V - 0.98 V - 200 µA - 100 µA - 15 mA - 10 mA - 7.5 mA - 5 mA IR TJ = 125°C 2 Version: K2104 MBR3035CT – MBR30150CT Taiwan Semiconductor Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBR30xCT TO-220AB 50 / Tube MBR30xCTH TO-220AB 50 / Tube Notes: 1. “x” defines voltage from 35V(MBR3035CT) to 150V(MBR30150CT) 2. “H” means AEC-Q101 qualified 3 Version: K2104 MBR3035CT – MBR30150CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 30 MBR3035CT-3045CT 25 CAPACITANCE (pF) 20 15 10 MBR3050CT-3060CT MBR3090CT-30150CT 1000 5 0 f=1.0MHz Vsig=50mVp-p 100 25 50 75 100 125 150 0.1 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) MBR3035CT-3045CT MBR3050CT-30150CT TJ=125°C 0.1 TJ=75°C TJ=25°C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 100 10 10 UF1DLW MBR3050CT-3060CT 1 MBR3035CT-3045CT TJ=125°C TJ=25°C 0.1 MBR30150CT 1 0.01 0.1 0.001 0.1 MBR3090CT-30100CT Pulse width 300μs 1% duty cycle Pulse width 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.3 0.4 0.5 0.5 0.6 0.7 0.7 0.8 0.9 0.9 1.1 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 225 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 1 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 10 10 (A) AVERAGE FORWARD CURRENT (A) 35 200 8.3ms single half sine wave 175 150 125 100 75 50 25 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 Version: K2104 1.2 MBR3035CT – MBR30150CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: K2104 MBR3035CT – MBR30150CT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-220AB MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: K2104 MBR3035CT – MBR30150CT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: K2104