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HS1FL MQG

HS1FL MQG

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    Sub-SMA

  • 描述:

    DIODE GEN PURP 300V 1A SUB SMA

  • 详情介绍
  • 数据手册
  • 价格&库存
HS1FL MQG 数据手册
HS1AL – HS1ML Taiwan Semiconductor 1A, 50V - 1000V High Efficient Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction Ideal for automated placement Low profile Package Low power loss, high efficiency Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 1 A VRRM 50 - 1000 V IFSM 30 A TJ MAX 150 °C APPLICATIONS Package Sub SMA Configuration Single die ● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application MECHANICAL DATA ● ● ● ● ● ● Case: Sub SMA Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 0.019g (approximately) Sub SMA ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device HS 1AL HS 1BL HS 1DL HS 1FL HS 1GL HS 1JL HS 1KL HS UNIT 1ML HAL HBL HDL HFL HGL HJL HKL HML Repetitive peak reverse voltage VRRM 50 100 200 300 400 600 800 1000 V Reverse voltage, total rms value VR(RMS) 35 70 140 210 280 420 560 700 V Forward current Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Junction temperature IF 1 A IFSM 30 A TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: C2103 HS1AL – HS1ML Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance SYMBOL TYP UNIT RӨJA 100 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS HS1AL HS1BL HS1DL HS1FL HS1GL HS1JL HS1KL HS1ML (1) Reverse current @ rated VR TJ = 25°C (2) Junction capacitance Reverse recovery time IF = 1A, TJ = 25°C VF IR TJ = 125°C HS1AL HS1BL HS1DL HS1FL HS1GL HS1JL HS1KL HS1ML HS1AL HS1BL HS1DL HS1FL HS1GL HS1JL HS1KL HS1ML SYMBOL 1MHz, VR = 4.0V IF = 0.5A, IR = 1.0A, Irr = 0.25A TYP MAX UNIT - 0.95 V - 1.30 V - 1.70 V - 5 µA - 150 µA 20 - pF 15 - pF - 50 ns - 75 ns CJ trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING HS1xL Sub SMA 10,000 / Tape & Reel Notes: 1. “x” defines voltage from 50V(HS1AL) to 1000V(HS1ML) 2 Version: C2103 HS1AL – HS1ML Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 50 40 CAPACITANCE (pF) 1 HS1AL-HS1GL 30 HS1JL - HS1ML 20 10 0 25 50 75 100 125 f=1.0MHz Vsig=50mVp-p 0 150 0.1 1 LEAD TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) 10 TJ=125°C 0.1 TJ=25°C 0.001 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 10 UF1DLW 1 HS1AL - HS1DL TJ=125°C HS1GL 1 0.1 TJ=25°C HS1JL - HS1ML 0.01 0.1 0.001 0.4 0.3 Pulse width 300μs 1% duty cycle Pulse width 0.6 0.4 0.8 0.5 1.0 1.2 0.6 0.7 0.8 FORWARD VOLTAGE (V) 1.4 0.9 1.6 1 1.1 Fig.5 Maximum Non-Repetitive Forward Surge Current 40 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (uA) Fig.4 Typical Forward Characteristics 100 0.01 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 1 10 (A) AVERAGE FORWARD CURRENT (A) 2 8.3ms single half sine wave 30 20 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: C2103 1.2 HS1AL – HS1ML Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: C2103 HS1AL – HS1ML Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS Sub SMA SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: C2103 HS1AL – HS1ML Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: C2103
HS1FL MQG AI解析
物料型号:HS1AL至HS1ML

器件简介:1A,50V至1000V高效表面贴装整流器,具有玻璃钝化芯片结、适合自动化放置、低轮廓封装、低功耗高效率、符合RoHS标准、无卤素。

引脚分配:文档中未明确列出引脚分配,但通常整流器会有阳极和阴极两个引脚。

参数特性: - 正向电流(IF):1A - 反向电压(VRRM):50至1000V - 正向浪涌电流(IFSM):30A - 最大结温(TJMAX):150°C - 封装类型:Sub SMA - 配置:单芯片

功能详解:适用于直流到直流转换器、开关模式转换器和逆变器、续流应用。

应用信息:文档中提供了器件的应用领域,如DC-DC转换器、开关模式转换器和逆变器、续流应用。

封装信息:Sub SMA封装,符合UL 94V-0可燃性等级,引脚为镀锡,可焊接,符合JESD 201 1A级晶须测试。
*介绍内容由AI识别生成
HS1FL MQG 价格&库存

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