HERF1003G C0G

HERF1001G – HERF1008G Taiwan Semiconductor 10A, 50V - 1000V High Efficient Rectifier FEATURES ● ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available High efficiency, low VF High current capability High surge current capability Low power loss UL Recognized File # E-326243 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 10 A VRRM 50 - 1000 V IFSM 125 A TJ MAX 150 °C Package ITO-220AB Configuration Dual dies APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application MECHANICAL DATA ● ● ● ● ● ● ● Case: ITO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.82g (approximately) ITO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL HERF HERF HERF HERF HERF HERF HERF UNIT HERF HERF HERF HERF HERF HERF HERF HERF 1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G VRRM 50 100 200 300 400 600 800 1000 V VR(RMS) 35 70 140 210 280 420 560 700 V Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Junction temperature Storage temperature HERF 1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G IF 10 A IFSM 125 A TJ -55 to +150 °C TSTG -55 to +150 °C 1 Version: I2105 HERF1001G – HERF1008G Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 3 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT - 1.0 V - 1.3 V - 1.7 V - 10 µA - 400 µA 60 - pF 40 - pF - 50 ns - 80 ns HERF1001G HERF1002G HERF1003G (1) Forward voltage per diode HERF1004G HERF1005G IF = 5A, TJ = 25°C VF HERF1006G HERF1007G HERF1008G Reverse current @ rated VR per diode (2) TJ = 25°C TJ = 125°C IR HERF1001G HERF1002G HERF1003G Junction capacitance per diode HERF1004G HERF1005G 1MHz, VR = 4.0V CJ HERF1006G HERF1007G HERF1008G HERF1001G HERF1002G HERF1003G Reverse recovery time HERF1004G IF = 0.5A , IR = 1.0A HERF1005G Irr = 0.25A trr HERF1006G HERF1007G HERF1008G Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING HERF10xG ITO-220AB 50 / Tube HERF10xGH ITO-220AB 50 / Tube Notes: 1. “x” defines voltage from 50V(HERF1001G) to 1000V(HERF1008G) 2. “H” means AEC-Q101 qualified 2 Version: I2105 HERF1001G – HERF1008G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 10 CAPACITANCE (pF) 8 6 4 HERF1001G-1005G 100 10 HERF1006G-1008G 2 0 25 50 75 100 125 f=1.0MHz Vsig=50mVp-p 1 150 1 10 CASE TEMPERATURE (°C) Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) 100 TJ=125°C TJ=75°C TJ=25°C 1 10 20 30 40 50 60 70 80 90 100 100 10 HERF1001G-1004G 10 UF1DLW 1 HERF1005G TJ=125°C TJ=25°C 0.1 1 HERF1006G-1008G 0.01 Pulse width 300μs Pulse width 1% duty cycle 0.1 0.001 0.4 0.30.6 0.40.8 0.51.0 0.61.2 0.71.4 0.81.6 0.91.8 12.0 1.1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 150 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.3 Typical Reverse Characteristics 10 100 REVERSE VOLTAGE (V) 125 8.3ms single half sine wave 100 75 50 25 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 (A) AVERAGE FORWARD CURRENT (A) 12 Version: I2105 1.2 HERF1001G – HERF1008G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: I2105 HERF1001G – HERF1008G Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS ITO-220AB MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: I2105 HERF1001G – HERF1008G Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: I2105