BAS85 L1G

BAS85 Taiwan Semiconductor 200mW , Hermetically Sealed Glass Fast Switching Schottky Barrier Diodes FEATURES KEY PARAMETERS ● Low forward voltage ● Ideal for automated placement ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT PD 200 mW VRRM 30 V IFSM 4 A VF at IF=100mA 0.8 V TJ Max. 125 °C APPLICATIONS ● ● ● ● Adapters For switching power supply Low stored charge Inverter Package MINI MELF Configuration Single die MECHANICAL DATA ● ● ● ● Case: Mini-MELF Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Power dissipation SYMBOL BAS85 UNIT PD 200 mW VRRM VR IF(AV) IFSM 30 30 200 4 V V mA A Junction temperature range TJ -65 to +125 °C Storage temperature range TSTG -65 to +125 °C Repetitive peak reverse voltage Maximum DC blocking voltage Average forward rectified current Peak forward surge current 1 Version:D1804 BAS85 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Reverse voltage Reverse current Forward voltage CONDITIONS (2) (2) (1) SYMBOL MIN TYP MAX UNIT IR = 10 μA, TJ = 25°C VR 30 - - V VR = 25 V, TJ = 25°C IR - - 2 μA IF = 0.1mA, TJ = 25°C - - 0.24 IF = 1mA, TJ = 25°C - - 0.32 - - 0.40 IF = 30mA, TJ = 25°C - - 0.50 IF = 100mA, TJ = 25°C - - 0.80 IF = 10mA, TJ = 25°C VF V Junction capacitance 1 MHz, VR=1V CJ - - 10 pF Reverse recovery time IF = IR = 10mA RL = 100Ω , IRR = 1mA trr - 5 - ns Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PART NO. PACKAGE PACKING BAS85 L0 MINI MELF 10K / 13" Reel BAS85 L0G MINI MELF 10K / 13" Reel BAS85 L1 MINI MELF 2.5K / 7" Reel BAS85 L1G MINI MELF 2.5K / 7" Reel 2 Version:D1804 BAS85 Taiwan Semiconductor PACKAGE OUTLINE DIMENSION Mini-MELF Unit (mm) DIM. C Unit (inch) Min Max Min Max A 3.30 3.70 0.130 0.146 B 1.40 1.60 0.055 0.063 C 0.20 0.50 0.008 0.020 B A SUGGEST PAD LAYOUT Unit (mm) Unit (inch) Typ. Typ. A 1.25 0.049 DIM. 3 B 2.00 0.079 C 2.50 0.098 D 5.00 0.197 Version:D1804 BAS85 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4 Version:D1804