MBRS16100 MNG

MBRS1635 – MBRS16150 Taiwan Semiconductor 16A, 35V - 150V Schottky Barrier Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Low power loss, high efficiency Ideal for automated placement Guard ring for overvoltage protection High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 16 A VRRM 35 - 150 V IFSM 150 A TJ MAX 150 °C 2 Package TO-263AB (D PAK) Configuration Single die ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters MECHANICAL DATA ● ● ● ● ● ● 2 Case: TO-263AB (D PAK) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.37g (approximately) 2 TO-263AB (D PAK) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device MBRS MBRS MBRS MBRS MBRS 1635 1645 1650 1660 1690 MBRS MBRS MBRS MBRS MBRS 1635 1645 1650 1660 1690 35 45 50 60 90 MBRS 16100 MBRS 16100 100 MBRS UNIT 16150 MBRS 16150 150 V Repetitive peak reverse voltage VRRM Reverse voltage, total rms value VR(RMS) Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Peak repetitive reverse surge (1) current Peak repetitive forward current (Rated VR, Square wave, 20KHz) Junction temperature IF 16 A IFSM 150 A Storage temperature IRRM 24 31 35 42 1 63 0.5 70 105 V A IFRM 32 A TJ -55 to +150 °C TSTG -55 to +175 °C Notes: 1. tp = 2.0μs, 1.0KHz 1 Version: K2103 MBRS1635 – MBRS16150 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 1.5 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS (1) Reverse current @ rated VR (2) MBRS1635 MBRS1645 MBRS1650 MBRS1660 MBRS1690 MBRS16100 MBRS16150 MBRS1635 MBRS1645 MBRS1650 MBRS1660 MBRS1690 MBRS16100 MBRS16150 MBRS1635 MBRS1645 MBRS1650 MBRS1660 MBRS1690 MBRS16100 MBRS16150 MBRS1635 MBRS1645 MBRS1650 MBRS1660 MBRS1690 MBRS16100 MBRS16150 SYMBOL IF = 16A, TJ = 25°C VF IF = 16A, TJ = 125°C TYP MAX UNIT - 0.63 V - 0.75 V - 0.85 V - 0.95 V - 0.57 V - 0.65 V - 0.82 V - 0.92 V - 500 µA - 300 µA - 100 µA - 15 mA - 10 mA - 7.5 mA - 5 mA TJ = 25°C IR TJ = 125°C Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) MBRS16x PACKAGE 2 TO-263AB (D PAK) PACKING 800 / Tape & Reel Notes: 1. “x” defines voltage from 35V(MBRS1635) to 150V(MBRS16150) 2 Version: K2103 MBRS1635 – MBRS16150 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 16 CAPACITANCE (pF) 12 8 MBRS1635 - MBRS1645 1000 MBRS1650 - MBRS16150 4 f=1.0MHz Vsig=50mVp-p 100 0 25 50 75 100 125 0.1 150 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) MBRS1635-1645 MBRS1650-16150 TJ=125°C 0.1 TJ=75°C 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 80 90 100 100 10 MBRS1635-1645 MBRS1650-16150 10 UF1DLW 1 TJ=125°C TJ=125°C TJ=25°C 0.1 1 TJ=25°C 0.01 Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 180 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 1 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 10 10 (A) AVERAGE FORWARD CURRENT (A) 20 8.3ms single half sine wave 150 120 90 60 30 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: K2103 1.2 MBRS1635 – MBRS16150 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 4 Version: K2103 MBRS1635 – MBRS16150 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS 2 TO-263AB (D PAK) SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: K2103 MBRS1635 – MBRS16150 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: K2103