TSF20H200C C0G

TSF20H100C – TSF20H200C Taiwan Semiconductor 20A, 100V - 200V Trench Schottky Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Low power loss/ high efficiency High forward surge capability Compliant RoHS Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● PARAMETER VALUE UNIT IF 20 A VRRM 100 - 200 V IFSM 120 A TJ MAX 150 °C Package ITO-220AB Configuration Dual dies Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA ● ● ● ● ● ● ● Case: ITO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Mounting torque: 0.56 N⋅m maximum Polarity: As marked Weight: 1.70g (approximately) ITO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device Repetitive peak reverse voltage VRRM Reverse voltage, total rms value VR(RMS) TSF20H TSF20H TSF20H TSF20H UNIT 100C 120C 150C 200C TSF20H TSF20H TSF20H TSF20H 100C 120C 150C 200C 100 120 150 200 V 70 84 105 140 V IF 20 A IFSM 120 A dv/dt 10,000 V/µs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C Forward current Surge peak forward current, 8.3ms single half sine-wave superimposed on rated load Critical rate of rise of off-state voltage 1 Version: J2105 TSF20H100C – TSF20H200C Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL Junction-to-case thermal resistance TSF20H100C TSF20H120C TSF20H150C TSF20H200C TYP UNIT 4.0 °C/W 4.5 °C/W RӨJC ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT 0.64 - V 0.68 - V 0.72 - V TSF20H200C 0.77 - V TSF20H100C 0.74 0.81 V 0.78 0.87 V 0.81 0.90 V 0.83 0.93 V 0.55 - V 0.56 - V 0.58 - V TSF20H200C 0.62 - V TSF20H100C 0.63 0.70 V 0.63 0.69 V 0.66 0.75 V TSF20H200C 0.68 0.78 V TSF20H100C - 200 µA - 250 µA - 100 µA - 10 mA - 15 mA TSF20H100C TSF20H120C TSF20H150C IF = 5A, TJ = 25°C TSF20H120C TSF20H150C Forward voltage per diode (1) IF = 10A, TJ = 25°C TSF20H200C VF TSF20H100C TSF20H120C TSF20H150C IF = 5A, TJ = 125°C TSF20H120C TSF20H150C Reverse current @ rated VR (2) per diode TSF20H120C TSF20H150C TSF20H200C TSF20H100C TSF20H120C TSF20H150C TSF20H200C IF = 10A, TJ = 125°C TJ = 25°C IR TJ = 125°C Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING TSF20HxC ITO-220AB 50 / Tube Notes: 1. “x” defines voltage from 100V(TSF20H100C) to 200V(TSF20H200C) 2 Version: J2105 TSF20H100C – TSF20H200C Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 20 CAPACITANCE (pF) 15 10 TSF20H100C-120C 1000 TSF20H150C-200C 100 5 f=1.0MHz Vsig=50mVp-p 10 0 50 75 100 125 0.1 150 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=150°C 1 TJ=125°C TJ=100°C 0.01 0.001 TJ=25°C 0.0001 20 30 40 50 60 70 80 90 100 100 10 TSF20H100C 10 UF1DLW 1 TJ=150°C TJ=125°C TJ=125°C 0.1 TJ=25°C TJ=25°C 1 TJ=100°C 0.01 0.1 0.001 0.1 Pulse width 300μs 1% duty cycle Pulse width 0.3 0.3 0.4 0.5 0.5 0.6 0.7 0.7 0.8 0.9 0.9 1.1 1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) Fig.5 Typical Reverse Characteristics Fig.6 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) TSF20H100C 10 INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 0.1 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 10 10 100 TSF20H120C 10 TJ=150°C 1 TJ=125°C 0.1 TJ=100°C 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 3 (A) 25 1.1 1.2 1.1 1.2 100 10 TSF20H120C 10 UF1DLW 1 TJ=150°C TJ=125°C TJ=125°C TJ=25°C 0.1 TJ=25°C 1 TJ=100°C Pulse width 300μs 1% duty cycle Pulse width 0.01 0.1 0.001 0.1 (A) AVERAGE FORWARD CURRENT (A) 25 0.3 0.3 0.4 0.5 0.7 0.9 0.5 0.6 VOLTAGE 0.7 0.8 0.9 FORWARD (V) 1 1.1 Version: J2105 TSF20H100C – TSF20H200C Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 20 30 40 50 60 70 80 90 100 100 10 TSF20H150C 10 UF1DLW 1 TJ=150°C TJ=125°C TJ=125°C TJ=25°C 0.1 TJ=25°C 1 TJ=100°C 0.01 0.1 0.001 0.1 Pulse width 300μs 1% duty cycle Pulse width 0.3 0.3 0.4 0.5 0.5 0.6 0.7 0.7 0.8 0.9 0.9 1 1.1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) Fig.9 Typical Reverse Characteristics Fig.10 Typical Forward Characteristics 10 TSF20H200C 1 0.1 TJ=150°C TJ=125°C 0.01 TJ=100°C 0.001 0.0001 TJ=25°C 0.00001 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) (A) TJ=150°C 1.1 1.2 1.1 1.2 100 10 TSF20H200C 10 UF1DLW 1 TJ=150°C TJ=125°C TJ=125°C 0.1 TJ=25°C 1 TJ=100°C 0.01 0.1 0.001 0.1 TJ=25°C (A) TSF20H150C INSTANTANEOUS FORWARD CURRENT (A) 10 10 INSTANTANEOUS REVERSE CURRENT (mA) Fig.8 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.7 Typical Reverse Characteristics Pulse width 300μs 1% duty cycle Pulse width 0.3 0.3 0.4 0.5 0.5 0.6 0.7 0.7 0.8 0.9 0.9 1 1.1 FORWARD VOLTAGE (V) 4 Version: J2105 TSF20H100C – TSF20H200C Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS ITO-220AB MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: J2105 TSF20H100C – TSF20H200C Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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