TSF30L150C C0G

TSF30L100C – TSF30L200C Taiwan Semiconductor 30A, 100V - 200V Trench Schottky Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Low power loss/ high efficiency High forward surge capability Compliant RoHS Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● PARAMETER VALUE UNIT IF 30 A VRRM 100 - 200 V IFSM 160 A TJ MAX 150 °C Package ITO-220AB Configuration Dual dies Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA ● ● ● ● ● ● ● Case: ITO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Mounting torque: 0.56 N⋅m maximum Polarity: As marked Weight: 1.70g (approximately) ITO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Repetitive peak reverse voltage VRRM TSF30L 100C TSF30L 100C 100 Reverse voltage, total rms value VR(RMS) 70 PARAMETER SYMBOL Marking code on the device TSF30L 120C TSF30L 120C 120 TSF30L 150C TSF30L 150C 150 84 105 TSF30L UNIT 200C TSF30L 200C 200 V 140 V IF 30 A IFSM 160 A dv/dt 10,000 V/µs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C Forward current Surge peak forward current, 8.3ms single half sine-wave superimposed on rated load Critical rate of rise of off-state voltage 1 Version: C2105 TSF30L100C – TSF30L200C Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL Junction-to-case thermal resistance TSF30L100C TSF30L120C TSF30L150C TSF30L200C TYP UNIT 4.0 °C/W 4.5 °C/W RӨJC ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TSF30L100C TSF30L120C TSF30L150C Forward voltage per diode (1) IF = 15A, TJ = 25°C TSF30L200C VF TSF30L100C TSF30L120C TSF30L150C IF = 15A, TJ = 125°C TSF30L200C Reverse current @ rated VR per (2) diode TSF30L100C TSF30L120C T = 25°C TSF30L150C J TSF30L200C TSF30L100C TSF30L120C T = 125°C TSF30L150C J TSF30L200C TYP MAX UNIT 0.73 0.80 V 0.80 0.88 V 0.84 0.92 V 0.86 0.96 V 0.64 0.70 V 0.67 0.76 V 0.70 0.78 V 0.73 0.81 V - 250 µA - 100 µA - 25 mA - 15 mA IR Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING TSF30LxC ITO-220AB 50 / Tube Notes: 1. “x” defines voltage from 100V(TSF30L100C) to 200V(TSF30L200C) 2 Version: C2105 TSF30L100C – TSF30L200C Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 30 TSF30L100C-120C TSF30L100C 20 TSF30L150C-200C 10 TSF30L120C TSF30L150C 100 TSF30L200C 5 0 f=1.0MHz Vsig=50mVp-p 10 25 50 75 100 125 150 0.1 1 CASE TEMPERATURE (°C) TJ=150°C 1 TJ=125°C TJ=100°C 0.1 0.01 TJ=25°C 0.001 10 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) 100 10 20 30 40 50 60 70 100 Fig.4 Typical Forward Characteristics 80 90 100 100 10 TSF30L100C UF1DLW 1 10 TJ=150°C TJ=125°C TJ=125°C TJ=25°C 0.1 TJ=25°C 1 TJ=100°C 0.01 0.1 0.001 0.1 Pulse width 300μs 1% duty cycle Pulse width 0.3 0.3 0.4 0.5 0.5 0.6 0.7 0.7 0.8 0.9 0.9 1 1.1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) Fig.5 Typical Reverse Characteristics Fig.6 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.3 Typical Reverse Characteristics TSF30L100C 10 REVERSE VOLTAGE (V) 100 TSF30L120C 10 TJ=150°C 1 0.1 TJ=100°C TJ=125°C 0.01 TJ=25°C 0.001 0.0001 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 3 (A) 15 1000 1.1 1.2 1.1 1.2 100 10 TSF30L120C UF1DLW 1 TJ=150°C 10 TJ=125°C TJ=125°C TJ=25°C 0.1 TJ=25°C 1 TJ=100°C 0.01 0.1 0.001 0.1 (A) 25 CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) 35 Pulse width 300μs 1% duty cycle Pulse width 0.3 0.3 0.4 0.5 0.7 0.5 0.6 VOLTAGE 0.7 0.8 FORWARD (V) 0.9 0.9 1 1.1 Version: C2105 TSF30L100C – TSF30L200C Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 20 30 40 50 60 70 80 90 100 TSF30L150C 10 UF1DLW 1 TJ=150°C TJ=125°C TJ=125°C TJ=25°C 0.1 TJ=25°C 1 TJ=100°C 0.01 0.1 0.001 0.1 Pulse width 300μs 1% duty cycle Pulse width 0.3 0.3 0.4 0.5 0.5 0.6 0.7 0.7 0.8 0.9 0.9 1.1 1 1.1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) Fig.9 Typical Reverse Characteristics Fig.10 Typical Forward Characteristics 10 TSF30L200C 1 0.1 TJ=150°C TJ=125°C 0.01 TJ=100°C 0.001 0.0001 TJ=25°C 0.00001 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) (A) TJ=150°C 100 10 100 10 TSF30L200C 10 UF1DLW 1 TJ=150°C TJ=125°C TJ=125°C 0.1 TJ=25°C 1 TJ=100°C 0.01 0.1 0.001 0.1 TJ=25°C Pulse width 300μs 1% duty cycle Pulse width 0.3 0.3 0.4 0.5 0.5 0.6 0.7 0.7 0.8 0.9 0.9 1 1.1 1.1 FORWARD VOLTAGE (V) 4 1.2 (A) TSF30L150C INSTANTANEOUS FORWARD CURRENT (A) 10 10 INSTANTANEOUS REVERSE CURRENT (mA) Fig.8 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.7 Typical Reverse Characteristics Version: C2105 1.2 TSF30L100C – TSF30L200C Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS ITO-220AB MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: C2105 TSF30L100C – TSF30L200C Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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