BZT52B2V4-G - BZT52B75-G
Taiwan Semiconductor
410mW 2% Zener Diodes
FEATURES
●
●
●
●
●
KEY PARAMETERS
Wide zener voltage range selection: 2.4V to 75V
VZ Tolerance Selection of ± 2%
Moisture sensitivity level: level 1, per J-STD-020
RoHS Compliant
Halogen-free according to IEC 61249-2-21
PARAMETER
VALUE
UNIT
VZ
2.4-75
V
Test current IZT
5-2
mA
Ptot
410
mW
VF at IF=10mA
0.9
V
TJ Max.
150
°C
APPLICATIONS
● Low voltage stabilizers or voltage references
● Adapters
● On-board DC/DC converter
Package
SOD-123
Configuration
Single die
MECHANICAL DATA
● Case: SOD-123
● Molding compound: UL flammability classification
rating 94V-0
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: Indicated by cathode band
● Weight: 10.54mg (approximately)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
Forward voltage @ IF=10mA
SYMBOL
VALUE
UNIT
VF
0.9
V
Ptot
410
mW
Junction temperature range
TJ
-55 to +150
°C
Storage temperature range
TSTG
-55 to +150
°C
SYMBOL
TYP
UNIT
RӨJA
357
°C/W
Total power dissipation
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
1
Version: H2002
BZT52B2V4-G - BZT52B75-G
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
TYPICAL
PART
MARKING
NUMBER
CODE
ZENER
TEST
VOLTAGE
CURRENT
VZ @ IZT
IZT
V
mA
REGULAR
TEST
LEAKAGE TEMPERATURE
IMPEDANCE CURRENT CURRENT
ZZT
ZZK
@ IZT
@ IZK
Ω
Ω
IZK
mA
COEFFICIENT CURRENT
IR @ V R
µA
V
@ IZTC
IZTC
mV/°C
mA
Min.
Nom.
Max.
Max.
Max.
Min.
Max.
BZT52B2V4-G
2WX
2.35
2.4
2.45
5
100
600
1.0
50
1.0
-3.5
0
5
BZT52B2V7-G
2W1
2.65
2.7
2.75
5
100
600
1.0
20
1.0
-3.5
0
5
BZT52B3V0-G
2W2
2.94
3.0
3.06
5
95
600
1.0
10
1.0
-3.5
0
5
BZT52B3V3-G
2W3
3.23
3.3
3.37
5
95
600
1.0
5
1.0
-3.5
0
5
BZT52B3V6-G
2W4
3.53
3.6
3.67
5
90
600
1.0
5
1.0
-3.5
0
5
BZT52B3V9-G
2W5
3.82
3.9
3.98
5
90
600
1.0
3
1.0
-3.5
0
5
BZT52B4V3-G
2W6
4.21
4.3
4.39
5
90
600
1.0
3
1.0
-3.5
0
5
BZT52B4V7-G
2W7
4.61
4.7
4.79
5
80
500
1.0
3
2.0
-3.5
0.2
5
BZT52B5V1-G
2W8
5.00
5.1
5.20
5
60
480
1.0
2
2.0
-2.7
1.2
5
BZT52B5V6-G
2W9
5.49
5.6
5.71
5
40
400
1.0
1
2.0
-2.0
2.5
5
BZT52B6V2-G
2WA
6.08
6.2
6.32
5
10
150
1.0
3
4.0
0.4
3.7
5
BZT52B6V8-G
2WB
6.66
6.8
6.94
5
15
80
1.0
2
4.0
1.2
4.5
5
BZT52B7V5-G
2WC
7.35
7.5
7.65
5
15
80
1.0
1
5.0
2.5
5.3
5
BZT52B8V2-G
2WD
8.04
8.2
8.36
5
15
80
1.0
0.7
5.0
3.2
6.2
5
BZT52B9V1-G
2WE
8.92
9.1
9.28
5
15
100
1.0
0.5
6.0
3.8
7.0
5
BZT52B10-G
2WF
9.80
10
10.20
5
20
150
1.0
0.2
7.0
4.5
8.0
5
BZT52B11-G
2WG
10.78
11
11.22
5
20
150
1.0
0.1
8.0
5.4
9.0
5
BZT52B12-G
2WH
11.76
12
12.24
5
25
150
1.0
0.1
8.0
6.0
10.0
5
BZT52B13-G
2WI
12.74
13
13.26
5
30
170
1.0
0.1
8.0
7.0
11.0
5
BZT52B15-G
2WJ
14.70
15
15.30
5
30
200
1.0
0.1
10.5
9.2
13.0
5
BZT52B16-G
2WK
15.68
16
16.32
5
40
200
1.0
0.1
11.2
10.4
14.0
5
BZT52B18-G
2WL
17.64
18
18.36
5
45
225
1.0
0.1
12.6
12.4
16.0
5
BZT52B20-G
2WM
19.60
20
20.40
5
55
225
1.0
0.1
14.0
14.4
18.0
5
BZT52B22-G
2WN
21.56
22
22.44
5
55
250
1.0
0.1
15.4
16.4
20.0
5
BZT52B24-G
2WO
23.52
24
24.48
5
70
250
1.0
0.1
16.8
18.4
22.0
5
BZT52B27-G
2WP
26.46
27
27.54
2
80
300
0.5
0.1
18.9
21.4
25.3
2
BZT52B30-G
2WQ
29.40
30
30.60
2
80
300
0.5
0.1
21.0
24.4
29.4
2
BZT52B33-G
2WR
32.34
33
33.66
2
80
325
0.5
0.1
23.1
27.4
33.4
2
BZT52B36-G
2WS
35.28
36
36.72
2
90
350
0.5
0.1
25.2
30.4
37.4
2
BZT52B39-G
2WT
38.22
39
39.78
2
130
350
0.5
0.1
27.3
33.4
41.2
2
BZT52B43-G
2WU
42.14
43
43.86
2
130
350
0.5
0.1
29.4
36.4
45.2
2
BZT52B47-G
2WV
46.06
47
47.94
2
100
750
1.0
0.1
35.0
10.0
12.0
5
BZT52B51-G
X1.
49.98
51
52.02
2
100
750
1.0
0.045
35.7
10.0
12.0
5
BZT52B56-G
X2.
54.88
56
57.12
2
200
400
0.5
0.045
39.2
10.0
12.0
5
BZT52B62-G
X3.
60.76
62
63.24
2
215
423
0.5
0.045
43.4
10.0
12.0
5
2
Max.
TEST
Version: H2002
BZT52B2V4-G - BZT52B75-G
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
TYPICAL
PART
MARKING
NUMBER
CODE
ZENER
TEST
VOLTAGE
CURRENT
VZ @ IZT
IZT
V
mA
REGULAR
TEST
LEAKAGE TEMPERATURE
IMPEDANCE CURRENT CURRENT
ZZT
ZZK
@ IZT
@ IZK
Ω
Ω
IZK
IR @ V R
mA
µA
V
Max.
TEST
COEFFICIENT CURRENT
@ IZTC
IZTC
mV/°C
mA
Min.
Nom.
Max.
Max.
Max.
Min.
Max.
BZT52B68-G
X4.
66.64
68
69.36
2
240
447
0.5
0.045
47.6
10.0
12.0
5
BZT52B75-G
X5.
73.5
75
76.5
2
255
470
0.5
0.045
52.5
10.0
12.0
5
ORDERING INFORMATION
ORDERING CODE
(Note 1)
PACKAGE
PACKING
BZT52Bxxx-G RHG
SOD-123
3K / 7" Reel
Note:
1. "xxx" defines voltage from 2.4V (BZT52B2V4-G) to 75V (BZT52B75-G)
3
Version: H2002
BZT52B2V4-G - BZT52B75-G
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Power Dissipation Curve
Fig.2 Zener Breakdown Characteristics
50
500
450
5V6
6V8
40
400
350
4V7
Iz (mA)
Power Dissipation (mW)
3V9
2V7
300
250
30
20
200
8V2
3V3
Test current
Iz 5mA
150
10
100
50
0
0
0
25
50
75
100
125
0
150
Ambient Temperature (°C)
1
2
3
4
5
6
7
8
9
10
Vz (V)
Fig.3 Zener Breakdown Characteristics
30
10
12
15
Iz (mA)
20
18
22
Test
current
Iz 5mA
10
27
33
0
0
10
20
30
40
Vz (V)
4
Version: H2002
BZT52B2V4-G - BZT52B75-G
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSION
SOD-123
SUGGEST PAD LAYOUT
5
Version: H2002
BZT52B2V4-G - BZT52B75-G
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability
for application assistance or the design of Purchasers’ products.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6
Version: H2002
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