MBRS2535CTHMNG

MBRS2535CT – MBRS25150CT Taiwan Semiconductor 25A, 35V - 150V Schottky Barrier Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Low power loss, high efficiency Ideal for automated placement Guard ring for overvoltage protection High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 25 A VRRM 35 - 150 V IFSM 200 A TJ MAX 150 APPLICATIONS °C 2 Package TO-263AB (D PAK) Configuration Dual dies ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters MECHANICAL DATA ● ● ● ● ● ● 2 Case: TO-263AB (D PAK) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.37g (approximately) 2 TO-263AB (D PAK) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Peak repetitive reverse (1) surge current Peak repetitive forward current (Rated VR, Square wave, 20KHz) Critical rate of rise of offstate voltage Notes: 1. tp = 2.0μs, 1.0KHz MBRS SYMBOL 2535 CT MBRS 2535CT MBRS 2545 CT MBRS 2545CT MBRS 2550 CT MBRS 2550CT MBRS 2560 CT MBRS 2560CT MBRS MBRS MBRS 2590 25100 25150 UNIT CT CT CT MBRS MBRS MBRS 2590CT 25100CT 25150CT VRRM 35 45 50 60 90 100 150 V VR(RMS) 24 31 35 42 63 70 105 V IF 25 A IFSM 200 A IRRM 1 0.5 A IFRM 25 A dv/dt 10,000 V/μs 1 Version: N2103 MBRS2535CT – MBRS25150CT Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER MBRS MBRS MBRS MBRS MBRS MBRS SYMBOL 2535 2545 2550 2560 2590 25100 CT CT CT CT CT CT MBRS 25150 UNIT CT Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 1 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per (1) diode CONDITIONS MBRS2535CT MBRS2545CT MBRS2550CT MBRS2560CT MBRS2590CT MBRS25100CT MBRS25150CT MBRS2535CT MBRS2545CT MBRS2550CT MBRS2560CT MBRS2590CT MBRS25100CT MBRS25150CT MBRS2535CT MBRS2545CT MBRS2550CT MBRS2560CT MBRS2590CT MBRS25100CT MBRS25150CT MBRS2535CT MBRS2545CT MBRS2550CT MBRS2560CT MBRS2590CT MBRS25100CT MBRS25150CT SYMBOL IF = 12.5A, TJ = 25°C IF = 25.0A, TJ = 25°C VF IF = 12.5A, TJ = 125°C IF = 25.0A, TJ = 125°C 2 TYP MAX UNIT - 0.65 V - 0.75 V - 0.85 V - 0.95 V - 0.82 V - 0.90 V - 0.92 V - 1.02 V - 0.55 V - 0.65 V - 0.75 V - 0.92 V - 0.73 V - 0.80 V - 0.88 V - 0.98 V Version: N2103 MBRS2535CT – MBRS25150CT Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Reverse current @ rated VR (2) per diode CONDITIONS MBRS2535CT MBRS2545CT MBRS2550CT MBRS2560CT TJ = 25°C MBRS2590CT MBRS25100CT MBRS25150CT MBRS2535CT MBRS2545CT MBRS2550CT MBRS2560CT TJ = 125°C MBRS2590CT MBRS25100CT MBRS25150CT SYMBOL IR TYP MAX UNIT - 200 µA - 100 µA - 15 mA - 10 mA - 7.5 mA - 5 mA Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) MBRS25xCT PACKAGE 2 TO-263AB (D PAK) PACKING 800 / Tape & Reel Notes: 1. “x” defines voltage from 35V(MBRS2535CT) to 150V(MBRS25150CT) 3 Version: N2103 MBRS2535CT – MBRS25150CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 25 MBRS2535CT - 2560CT CAPACITANCE (pF) 20 15 10 1000 100 MBRS2590CT - 25150CT 5 f=1.0MHz Vsig=50mVp-p 10 0 50 75 100 125 0.1 150 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 TJ=125°C 1 MBRS2535CT-2545CT MBRS2550CT-2560CT 0.1 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 80 90 100 100 10 MBRS2535CT-2545CT MBRS2550CT-2560CT 10 1 TJ=125°C 1 TJ=25°C 0.01 0.1 0.001 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) 0.1 MBRS2590CT-25100CT MBRS25150CT 0.001 TJ=25°C 0.0001 30 40 50 60 70 80 1.1 1.2 1.1 1.2 Fig.6 Typical Forward Characteristics TJ=125°C 20 Pulse width 300μs 1% duty cycle Pulse width FORWARD VOLTAGE (V) 10 10 TJ=25°C 0.1 Fig.5 Typical Reverse Characteristics 0.01 UF1DLW TJ=125°C PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 1 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 10 10 (A) 25 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 100 10 10 1 0.1 1 0.01 UF1DLW TJ=125°C TJ=125°C TJ=25°C (A) AVERAGE FORWARD CURRENT (A) 30 TJ=25°C MBRS2590CT-25100CT MBRS25150CT Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FORWARD VOLTAGE (V) 4 Version: N2103 MBRS2535CT – MBRS25150CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.7 Maximum Non-Repetitive Forward Surge Current PEAK FORWARD SURGE CURRENT (A) 250 8.3ms single half sine wave 200 150 100 50 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig.8 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: N2103 MBRS2535CT – MBRS25150CT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS 2 TO-263AB (D PAK) SUGGESTED PAD LAYOUT MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: N2103 MBRS2535CT – MBRS25150CT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: N2103