0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
HER1007G C0G

HER1007G C0G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    TO-220-3

  • 描述:

    DIODE ARRAY GP 800V 10A TO220AB

  • 数据手册
  • 价格&库存
HER1007G C0G 数据手册
HER1001G – HER1008G Taiwan Semiconductor 10A, 50V - 1000V High Efficient Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available High efficiency, low VF High current capability High surge current capability Low power loss RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 10 A VRRM 50 - 1000 V IFSM 125 A TJ MAX 150 °C Package TO-220AB Configuration Dual dies ● DC to DC converters ● Switching mode converters and inverters ● Freewheeling application MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.82g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) HER HER HER HER HER HER HER HER PARAMETER SYMBOL UNIT 1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G Marking code on the HER HER HER HER HER HER HER HER device 1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G Repetitive peak VRRM 50 100 200 300 400 600 800 1000 V reverse voltage Reverse voltage, total VR(RMS) 35 70 140 210 280 420 560 700 V rms value Forward current IF 10 A Surge peak forward current, 8.3ms single half sine wave IFSM 125 A superimposed on rated load Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 1 °C Version: I2104 HER1001G – HER1008G Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 1.5 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per diode CONDITIONS (1) HER1001G HER1002G HER1003G HER1004G HER1005G HER1006G HER1007G HER1008G Reverse current @ rated VR per diode Junction capacitance per diode Reverse recovery time (2) IF = 5A, TJ = 25°C TJ = 25°C TJ = 125°C HER1001G HER1002G HER1003G HER1004G 1MHz, VR = 4.0V HER1005G HER1006G HER1007G HER1008G HER1001G HER1002G HER1003G HER1004G IF = 0.5A, IR = 1.0A, HER1005G Irr = 0.25A HER1006G HER1007G HER1008G SYMBOL VF IR TYP MAX UNIT - 1.0 V - 1.3 V - 1.7 V - 10 µA - 400 µA 60 - pF 40 - pF - 50 ns - 80 ns CJ trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING HER10xG TO-220AB 50 / Tube HER10xGH TO-220AB 50 / Tube Notes: 1. “x” defines voltage from 50V(HER1001G) to 1000V(HER1008G) 2. “H” means AEC-Q101 qualified 2 Version: I2104 HER1001G – HER1008G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 200 160 CAPACITANCE (pF) 10 5 HER1001G-1005G 120 80 HER1006G-1008G f=1.0MHz Vsig=50mVp-p 40 0 0 25 50 75 100 125 150 1 10 LEAD TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C 10 TJ=75°C 1 TJ=25°C 0.1 20 30 40 50 60 70 80 90 100 100 10 HER1001G-1004G 10 UF1DLW 1 HER1005G TJ=125°C TJ=25°C 0.1 1 HER1006G-1008G 0.01 0.1 0.001 0.4 Pulse width 300μs 1% duty cycle Pulse width 0.3 0.6 0.8 1.0 0.4 0.5 0.6 1.2 0.7 1.4 0.8 1.6 0.9 1.8 1 1.1 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig.5 Maximum Non-Repetitive Forward Surge Current 150 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (µA) Fig.4 Typical Forward Characteristics 1000 10 1000 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 100 100 (A) AVERAGE FORWARD CURRENT (A) 15 8.3ms single half sine wave 125 100 75 50 25 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: I2104 1.2 HER1001G – HER1008G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: I2104 HER1001G – HER1008G Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-220AB MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: I2104 HER1001G – HER1008G Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: I2104
HER1007G C0G 价格&库存

很抱歉,暂时无法提供与“HER1007G C0G”相匹配的价格&库存,您可以联系我们找货

免费人工找货