MBR6035PTHC0G

MBR6035PT – MBR60100PT Taiwan Semiconductor 60A, 35V - 100V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability UL Recognized File # E-326243 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● ● PARAMETER VALUE UNIT IF 60 A VRRM 35 - 100 V IFSM 420 A TJ MAX 150 °C Package TO-247AD (TO-3P) Configuration Dual dies Switching mode power supply (SMPS) Adapters Monitor DC to DC converters TV MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-247AD (TO-3P) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Mounting torque: 1.13 N⋅m maximum Polarity: As marked Weight: 6.10g (approximately) TO-247AD (TO-3P) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage MBR MBR MBR MBR MBR MBR 6045 6050 6060 6090 60100 UNIT SYMBOL 6035 PT PT PT PT PT PT MBR MBR MBR MBR MBR MBR 6035PT 6045PT 6050PT 6060PT 6090PT 60100PT VRRM 35 45 50 60 90 100 V Reverse voltage, total rms value VR(RMS) 24 31 Forward current Surge peak forward current 8.3ms single half sine wave superimposed on rated load Peak repetitive reverse surge (1) current Peak repetitive forward current (Rated VR, Square wave, 20KHz) Critical rate of rise of off-state voltage Notes: 1. tp = 2.0μs, 1.0KHz IF 60 A IFSM 420 A IRRM 1 A IFRM 60 A dV/dt 10,000 V/μs 1 35 42 63 70 V Version: H2103 MBR6035PT – MBR60100PT Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL MBR 6035 PT MBR 6045 PT MBR 6050 PT MBR 6060 PT MBR 6090 PT MBR 60100 UNIT PT Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 1.2 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per diode CONDITIONS (1) Reverse current @ rated VR (2) per diode MBR6035PT MBR6045PT MBR6050PT MBR6060PT MBR6090PT MBR60100PT MBR6035PT MBR6045PT MBR6050PT MBR6060PT MBR6090PT MBR60100PT MBR6035PT MBR6045PT MBR6050PT MBR6060PT MBR6090PT MBR60100PT MBR6035PT MBR6045PT MBR6050PT MBR6060PT MBR6090PT MBR60100PT MBR6035PT MBR6045PT MBR6050PT MBR6060PT MBR6090PT MBR60100PT SYMBOL IF = 30A, TJ = 25°C IF = 60A, TJ = 25°C VF IF = 30A, TJ = 125°C TJ = 25°C TYP MAX UNIT - 0.70 V - 0.75 V - 0.84 V - 0.82 V - 0.93 V - 0.98 V - 0.60 V - 0.65 V - - V - 1000 µA - 30 mA - 20 mA - 10 mA IR TJ = 125°C Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms 2 Version: H2103 MBR6035PT – MBR60100PT Taiwan Semiconductor ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBR60xPT TO-247AD (TO-3P) 30 / Tube MBR60xPTH TO-247AD (TO-3P) 30 / Tube Notes: 1. “x” defines voltage from 35V(MBR6035PT) to 100V(MBR60100PT) 2. “H” means AEC-Q101 qualified 3 Version: H2103 MBR6035PT – MBR60100PT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 6035PT - 6045PT 6050PT - 6060PT 6090PT - 60100PT 60 CAPACITANCE (pF) 45 30 1000 15 f=1.0MHz Vsig=50mVp-p 100 0 25 50 75 100 125 0.1 150 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) 6035PT - 6045PT 6050PT - 60100PT TJ=125°C TJ=75°C 1 0.1 TJ=25°C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 100010 6035PT - 6045PT 6050PT - 60100PT UF1DLW 100 1 TJ=125°C TJ=125°C 10 0.1 TJ=25°C TJ=25°C 1 0.01 0.1 0.001 0.0 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Pulse width 300μs 1% duty cycle Pulse width 0.2 0.4 0.4 0.5 0.6 0.8 0.6 0.7 0.8 1.0 0.9 1.2 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 480 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 1000 10 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 100 10 420 8.3ms single half sine wave 360 300 240 180 120 60 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 (A) AVERAGE FORWARD CURRENT (A) 75 Version: H2103 1.2 MBR6035PT – MBR60100PT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: H2103 MBR6035PT – MBR60100PT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-247AD (TO-3P) MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: H2103 MBR6035PT – MBR60100PT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: H2103