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SFAF2003GHC0G

SFAF2003GHC0G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    TO220-2

  • 描述:

    DIODE GEN PURP 150V 20A ITO220AC

  • 数据手册
  • 价格&库存
SFAF2003GHC0G 数据手册
SFAF2001G – SFAF2008G Taiwan Semiconductor 20A, 50V - 600V Super Fast Rectifier FEATURES ● ● ● ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss UL Recognized File # E-326243 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 20 A VRRM 50 - 600 V IFSM 200 A TJ MAX 150 °C Package ITO-220AC Configuration Single die APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application MECHANICAL DATA ● ● ● ● ● ● ● Case: ITO-220AC Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.70g (approximately) ITO-220AC ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage total rms value Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Junction temperature Storage temperature SYMBOL SFAF SFAF SFAF SFAF SFAF SFAF SFAF SFAF UNIT 2001G 2002G 2003G 2004G 2005G 2006G 2007G 2008G SFAF SFAF SFAF SFAF SFAF SFAF SFAF SFAF 2001G 2002G 2003G 2004G 2005G 2006G 2007G 2008G VRRM 50 100 150 200 300 400 500 600 V VR(RMS) 35 70 105 140 210 280 350 420 V IF 20 A IFSM 200 A TJ -55 to +150 °C TSTG -55 to +150 °C 1 Version: J2105 SFAF2001G – SFAF2008G Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 3 °C/W Junction-to-case resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage (1) Reverse current @ rated VR (2) Junction capacitance Reverse recovery time CONDITIONS SFAF2001G SFAF2002G SFAF2003G SFAF2004G I = 20A, TJ = 25°C SFAF2005G F SFAF2006G SFAF2007G SFAF2008G TJ = 25°C TJ = 125°C SFAF2001G SFAF2002G SFAF2003G SFAF2004G 1MHz, VR = 4.0V SFAF2005G SFAF2006G SFAF2007G SFAF2008G IF = 0.5A, IR = 1.0A Irr = 0.25A SYMBOL TYP MAX UNIT - 0.975 V - 1.300 V - 1.700 V - 10 µA - 400 µA 170 - pF 150 - pF - 35 ns VF IR CJ trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING SFAF20xG ITO-220AC 50 / Tube SFAF20xGH ITO-220AC 50 / Tube Notes: 1. “x” defines voltage from 50V(SFAF2001G) to 600V(SFAF2008G) 2. “H” means AEC-Q101 qualified 2 Version: J2105 SFAF2001G – SFAF2008G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.2 Typical Junction Capacitance 24 300 20 250 CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) Fig.1 Forward Current Derating Curve 16 12 8 4 SFAF2001G-2004G 200 SFAF2005G-2008G 150 100 50 0 f=1.0MHz Vsig=50mVp-p 0 25 50 75 100 125 150 1 10 CASE TEMPERATURE (°C) REVERSE VOLTAGE (V) Fig.4 Typical Forward Characteristics TJ=100°C 10 TJ=75°C 1 TJ=25°C 0.1 20 30 40 50 60 70 80 90 100 100 10 SFAF2001G-2004G 1 10 UF1DLW TJ=125°C TJ=25°C 0.1 (A) INSTANTANEOUS FORWARD CURRENT (A) 100 SFAF2005G-2006G 1 0.01 SFAF2007G-2008G 0.001 0.1 0.3 0.4 0.5 0.2 0.4 0.6 0.8 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Pulse widthPulse 300μs width 1% duty cycle 0.6 1 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 2 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 225 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.3 Typical Reverse Characteristics 10 100 200 175 150 125 100 75 50 25 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: J2105 1.2 SFAF2001G – SFAF2008G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: J2105 SFAF2001G – SFAF2008G Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS ITO-220AC MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: J2105 SFAF2001G – SFAF2008G Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: J2105
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