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MBR30L100CTHC0G

MBR30L100CTHC0G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    TO-220-3

  • 描述:

    DIODE ARRAY SCHOTTKY 100V TO220

  • 数据手册
  • 价格&库存
MBR30L100CTHC0G 数据手册
MBR30L45CT – MBR30L100CT Taiwan Semiconductor 30A, 45V - 100V Low VF Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters PARAMETER VALUE UNIT IF 30 A VRRM 45 - 100 V IFSM 220 A TJ MAX 150 °C Package TO-220AB Configuration Dual dies MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.90g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device Repetitive peak reverse voltage VRRM Reverse voltage, total rms value VR(RMS) Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load (1) Peak repetitive reverse surge current Peak repetitive forward current (Rated VR, Square wave, 20KHz) Critical rate of rise of off-state voltage MBR MBR MBR UNIT 30L45CT 30L60CT 30L100CT MBR MBR MBR 30L45CT 30L60CT 30L100CT 45 60 100 V 31 42 70 V IF 30 A IFSM 220 A IRRM 1 A IFRM 30 A dv/dt 10,000 V/μs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +175 °C Notes: 1. tp = 2.0μs, 1.0KHz 1 Version: L2104 MBR30L45CT – MBR30L100CT Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 1 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT - 0.55 V - 0.60 V - 0.77 V - 0.50 V - 0.56 V MBR30L100CT - 0.67 V MBR30L45CT - 400 µA - 480 µA - 500 µA - 200 mA - 150 mA - 32 mA MBR30L45CT MBR30L60CT Forward voltage per diode (1) MBR30L100CT VF MBR30L45CT MBR30L60CT MBR30L60CT Reverse current @ rated VR (2) per diode IF = 15A, TJ = 25°C IF = 15A, TJ = 125°C TJ = 25°C MBR30L100CT IR MBR30L45CT MBR30L60CT TJ = 100°C MBR30L100CT Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBR30LxCT TO-220AB 50 / Tube MBR30LxCTH TO-220AB 50 / Tube Notes: 1. “x” defines voltage from 45V(MBR30L45CT) to 100V(MBR30L100CT) 2. “H” means AEC-Q101 qualified 2 Version: L2104 MBR30L45CT – MBR30L100CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 30 25 CAPACITANCE (pF) 20 15 10 MBR30L45CT 1000 MBR30L60CT-100CT 100 5 0 25 50 75 100 125 f=1.0MHz Vsig=50mVp-p 10 150 0.1 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C 1 0.1 TJ=25°C 0.01 10 20 30 40 50 60 70 80 100 Fig.4 Typical Forward Characteristics 100 90 100 100 10 10 MBR30L45CT MBR30L100CT UF1DLW 1 TJ=125°C TJ=125°C TJ=25°C 0.1 1 TJ=25°C 0.01 0.1 0.001 0.1 Pulse width 300μs 1% duty cycle Pulse width 0.2 0.3 0.3 0.4 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.4 0.5 0.5 0.6 0.7 0.8 0.9 0.6 0.7 0.8 0.9 1.0 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 240 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.3 Typical Reverse Characteristics 10 10 REVERSE VOLTAGE (V) (A) AVERAGE FORWARD CURRENT (A) 35 220 200 8.3ms single half sine wave 180 160 140 120 100 80 60 40 20 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: L2104 1.2 MBR30L45CT – MBR30L100CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 4 Version: L2104 MBR30L45CT – MBR30L100CT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-220AB MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: L2104 MBR30L45CT – MBR30L100CT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: L2104
MBR30L100CTHC0G 价格&库存

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