MBR2035CT C0G

MBR2035CT – MBR20200CT Taiwan Semiconductor 20A, 35V - 200V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters PARAMETER VALUE UNIT IF 20 A VRRM 35 - 200 V IFSM 150 A TJ MAX 150 °C Package TO-220AB Configuration Dual dies MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.88g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER MBR 2035 CT MBR 2035 CT MBR 2045 CT MBR 2045 CT MBR 2050 CT MBR 2050 CT MBR 2060 CT MBR 2060 CT VRRM 35 45 50 60 90 100 150 200 V VR(RMS) 24 31 35 42 63 70 105 140 V SYMBOL Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Peak repetitive reverse (1) surge current Peak repetitive forward current (Rated VR, Square wave, 20KHz) MBR MBR MBR MBR 2090 20100 20150 20200 UNIT CT CT CT CT MBR MBR MBR MBR 2090 20100 20150 20200 CT CT CT CT IF 20 A IFSM 150 A IRRM 1 0.5 IFRM 20 1 A A Version: M2104 MBR2035CT – MBR20200CT Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) MBR MBR MBR MBR MBR MBR MBR MBR 2035 2045 2050 2060 2090 20100 20150 20200 UNIT PARAMETER SYMBOL CT CT CT CT CT CT CT CT Critical rate of rise of offdv/dt 10,000 V/μs state voltage Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C Notes: 1. tp = 2.0μs, 1.0KHz THERMAL PERFORMANCE PARAMETER Junction-to-case thermal resistance Junction-to-case thermal resistance SYMBOL TYP UNIT RӨJC 1 °C/W RӨJC 2 °C/W MBR2035CT MBR2045CT MBR2050CT MBR2060CT MBR2090CT MBR20100CT MBR20150CT MBR20200CT ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per (1) diode CONDITIONS MBR2035CT MBR2045CT MBR2050CT MBR2060CT MBR2090CT MBR20100CT MBR20150CT MBR20200CT MBR2035CT MBR2045CT MBR2050CT MBR2060CT MBR2090CT MBR20100CT MBR20150CT MBR20200CT MBR2035CT MBR2045CT MBR2050CT MBR2060CT MBR2090CT MBR20100CT MBR20150CT MBR20200CT MBR2035CT MBR2045CT MBR2050CT MBR2060CT MBR2090CT MBR20100CT MBR20150CT MBR20200CT SYMBOL TYP MAX UNIT - - V - 0.80 V - 0.85 V - 0.99 V - 0.84 V - 0.95 V - 1.23 V - 0.57 V - 0.70 V - 0.75 V - 0.87 V - 0.72 V - 0.85 V - 1.10 V IF = 10A, TJ = 25°C IF = 20A, TJ = 25°C VF IF = 10A, TJ = 125°C IF = 20A, TJ = 125°C 2 Version: M2104 MBR2035CT – MBR20200CT Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Reverse current @ rated VR (2) per diode CONDITIONS MBR2035CT MBR2045CT MBR2050CT MBR2060CT MBR2090CT MBR20100CT MBR20150CT MBR20200CT MBR2035CT MBR2045CT MBR2050CT MBR2060CT MBR2090CT MBR20100CT MBR20150CT MBR20200CT SYMBOL TJ = 25°C TYP MAX UNIT - 100 µA - 15 mA - 10 mA - 5 mA - 0.15 mA IR TJ = 125°C Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBR20xCT TO-220AB 50 / Tube MBR20xCTH TO-220AB 50 / Tube Notes: 1. “x” defines voltage from 35V(MBR2035CT) to 200V(MBR20200CT) 2. “H” means AEC-Q101 qualified 3 Version: M2104 MBR2035CT – MBR20200CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 20 CAPACITANCE (pF) 15 10 MBR2035CT - 2045CT 1000 MBR2050CT - 20200CT 5 f=1.0MHz Vsig=50mVp-p 100 0 25 50 75 100 125 150 0.1 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C 10 1 TJ=75°C 0.1 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 80 90 100 100 10 10 1 TUF1DLW J=125°C TJ=125°C 0.1 0.01 0.1 0.001 0.0 TJ=25°C TJ=25°C 2035CT-2045CT 2050CT-2060CT 2090CT-20100CT 20150CT-20200CT 1 Pulse width 300μs 1% duty cycle Pulse width 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.2 0.4 0.6 0.4 0.5 0.6 0.8 0.7 1.0 0.8 1.2 0.9 1.4 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 180 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 1000 100 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics MBR2035CT-2045CT MBR2050CT-20100CT MBR20150CT-20200CT 10 (A) AVERAGE FORWARD CURRENT (A) 25 8.3ms single half sine wave 150 120 90 60 30 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 Version: M2104 1.2 MBR2035CT – MBR20200CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 100 10 1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: M2104 MBR2035CT – MBR20200CT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-220AB MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: M2104 MBR2035CT – MBR20200CT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: M2104