MBR20200PTHC0G

MBR2035PT – MBR20200PT Taiwan Semiconductor 20A, 35V - 200V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability UL Recognized File # E-326243 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● ● PARAMETER VALUE UNIT IF 20 A VRRM 35 - 200 V IFSM 150 A TJ MAX 150 °C Package TO-247AD (TO-3P) Configuration Dual dies Switching mode power supply (SMPS) Adapters Monitor DC to DC converters TV MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-247AD (TO-3P) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Mounting torque: 1.13 N⋅m maximum Polarity: As marked Weight: 6.10g (approximately) TO-247AD (TO-3P) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current 8.3ms single half sine wave superimposed on rated load Peak repetitive reverse surge (1) current Peak repetitive forward current (Rated VR, Square wave, 20KHz) Notes: 1. tp = 2.0μs, 1.0KHz MBR SYMBOL 2035 PT MBR 2035 PT MBR 2045 PT MBR 2045 PT MBR 2050 PT MBR 2050 PT MBR 2060 PT MBR 2060 PT MBR MBR MBR MBR 2090 20100 20150 20200 UNIT PT PT PT PT MBR MBR MBR MBR 2090 20100 20150 20200 PT PT PT PT VRRM 35 45 50 60 90 100 150 200 V VR(RMS) 24 31 25 42 63 70 105 140 V IF 20 A IFSM 150 A IRRM 1.0 0.5 IFRM 20 1 A A Version: H2103 MBR2035PT – MBR20200PT Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) MBR MBR MBR MBR MBR MBR MBR MBR SYMBOL 2035 2045 2050 2060 2090 20100 20150 20200 UNIT PT PT PT PT PT PT PT PT PARAMETER Critical rate of rise of off-state voltage Junction temperature Storage temperature dV/dt 10,000 V/μs TJ -55 to +150 °C TSTG -55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 1 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per diode CONDITIONS (1) MBR2035PT MBR2045PT MBR2050PT MBR2060PT MBR2090PT MBR20100PT MBR20150PT MBR20200PT MBR2035PT MBR2045PT MBR2050PT MBR2060PT MBR2090PT MBR20100PT MBR20150PT MBR20200PT MBR2035PT MBR2045PT MBR2050PT MBR2060PT MBR2090PT MBR20100PT MBR20150PT MBR20200PT MBR2035PT MBR2045PT MBR2050PT MBR2060PT MBR2090PT MBR20100PT MBR20150PT MBR20200PT SYMBOL TYP MAX UNIT - - V - 0.80 V - 0.85 V - 0.95 V - 0.84 V - 0.95 V - 0.95 V - 1.02 V - 0.57 V - 0.70 V - 0.75 V - 0.92 V - 0.72 V - 0.85 V - 0.85 V - 0.98 V IF = 10A, TJ = 25°C IF = 20A, TJ = 25°C VF IF = 10A, TJ = 125°C IF = 20A, TJ = 125°C Notes: 1. Pulse test with PW = 0.3ms 2 Version: H2103 MBR2035PT – MBR20200PT Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Reverse current @ rated VR (2) per diode CONDITIONS MBR2035PT MBR2045PT MBR2050PT MBR2060PT TJ = 25°C MBR2090PT MBR20100PT MBR20150PT MBR20200PT MBR2035PT MBR2045PT MBR2050PT MBR2060PT TJ = 125°C MBR2090PT MBR20100PT MBR20150PT MBR20200PT SYMBOL TYP MAX UNIT - 100 µA - 15 mA - 10 mA - 5 mA IR Notes: 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBR20xPT TO-247AD (TO-3P) 30 / Tube MBR20xPTH TO-247AD (TO-3P) 30 / Tube Notes: 1. “x” defines voltage from 35V(MBR2035PT) to 200V(MBR20200PT) 2. “H” means AEC-Q101 qualified 3 Version: H2103 MBR2035PT – MBR20200PT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 2035PT - 2045PT 2050PT - 20200PT 20 CAPACITANCE (pF) 15 10 1000 100 5 f=1.0MHz Vsig=50mVp-p 10 0 25 50 75 100 125 0.1 150 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C 10 1 TJ=25°C 2035PT - 2045PT 2050PT - 20200PT 0.001 10 20 30 40 50 60 70 80 90 100 100010 100 1 2035PT - 2045PT 2050PT - 2060PT 2090PT - 20200PT UF1DLW TJ=125°C TJ=125°C 10 0.1 TJ=25°C 1 0.01 TJ=25°C 0.1 0.001 0.0 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Pulse width 300μs 1% duty cycle Pulse width 0.2 0.4 0.4 0.5 0.6 0.8 0.6 0.7 0.8 1.0 0.9 1.2 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 200 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 0.01 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 0.1 10 8.3ms single half sine wave 150 100 50 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 (A) AVERAGE FORWARD CURRENT (A) 25 Version: H2103 1.2 MBR2035PT – MBR20200PT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: H2103 MBR2035PT – MBR20200PT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-247AD (TO-3P) MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: H2103 MBR2035PT – MBR20200PT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: H2103