MBRF1545CTHC0G

MBRF1535CT – MBRF15150CT Taiwan Semiconductor 15A, 35V - 150V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability UL Recognized File # E-326243 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 15 A VRRM 35 - 150 V IFSM 150 A TJ MAX 150 °C Package ITO-220AB Configuration Dual dies ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters MECHANICAL DATA ● ● ● ● ● ● ● Case: ITO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.70g (approximately) ITO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) MBRF MBRF MBRF MBRF MBRF MBRF MBRF PARAMETER SYMBOL 1535 1545 1550 1560 CT CT CT CT 1590 15100 15150 UNIT CT CT CT MBRF MBRF MBRF MBRF MBRF MBRF MBRF 1535 1545 1550 1560 1590 15100 15150 CT CT CT CT CT CT CT Marking code on the device Repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 V Reverse voltage, total rms value VR(RMS) 24 31 35 42 63 70 105 V Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Peak repetitive reverse surge (1) current Peak repetitive forward current (Rated VR, Square wave, 20KHz) Critical rate of rise of off-state voltage IF 15 A IFSM 150 A IRRM 1.0 0.5 A IFRM 15 A dv/dt 10,000 V/µs 1 Version: J2105 MBRF1535CT – MBRF15150CT Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) MBRF MBRF MBRF MBRF MBRF MBRF MBRF PARAMETER SYMBOL Junction temperature Storage temperature Notes: 1. tp = 2.0μs, 1.0KHz 1535 1545 1550 1560 CT CT CT CT TJ TSTG 1590 15100 15150 UNIT CT CT CT -55 to +150 -55 to +150 °C °C THERMAL PERFORMANCE PARAMETER Junction-to-case thermal resistance SYMBOL TYP UNIT RӨJC 3.5 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MBRF1535CT MBRF1545CT MBRF1550CT MBRF1560CT MBRF1590CT MBRF15150CT MBRF1535CT MBRF1545CT MBRF1550CT MBRF1590CT (1) MBRF15150CT MBRF1545CT MBRF1550CT - V - 0.75 V - 0.92 V - 0.95 V - 0.84 V - - V - - V - - V - 0.57 V - 0.65 V - 0.82 V - 0.92 V - 0.72 V - - V - - V - - V IF = 7.5A,TJ = 125°C MBRF1590CT MBRF15100CT MBRF15150CT MBRF1535CT MBRF1545CT MBRF1550CT MBRF1560CT - VF MBRF1535CT MBRF1560CT UNIT IF = 15A,TJ = 25°C MBRF15100CT Forward voltage per diode MAX IF = 7.5A,TJ = 25°C MBRF15100CT MBRF1560CT TYP IF = 15A,TJ = 125°C MBRF1590CT MBRF15100CT MBRF15150CT 2 Version: J2105 MBRF1535CT – MBRF15150CT Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MBRF1535CT MBRF1545CT MBRF1550CT MBRF1560CT TJ = 25°C IR TYP MAX UNIT - 500 µA - 300 µA - 100 µA - 10 mA - 7.5 mA - 5 mA MBRF1590CT MBRF15100CT Reverse current @ rated VR per diode (2) MBRF15150CT MBRF1535CT MBRF1545CT MBRF1550CT MBRF1560CT TJ = 125°C MBRF1590CT MBRF15100CT MBRF15150CT Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBRF15xCT ITO-220AB 50 / Tube MBRF15xCTH ITO-220AB 50 / Tube Notes: 1. “x” defines voltage from 35V(MBRF1535CT) to 150V(MBRF15150CT) 2. “H” means AEC-Q101 qualified 3 Version: J2105 MBRF1535CT – MBRF15150CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 15 CAPACITANCE (pF) 10 5 MBRF1590CT-15150CT 1000 100 MBRF1535CT-1560CT f=1.0MHz Vsig=50mVp-p 10 0 25 50 75 100 125 0.1 150 1 CASE TEMPERATURE (°C) MBRF1535CT-1545CT MBRF1550CT-15150CT TJ=125°C 1 0.1 TJ=75°C 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 80 100 Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) 100 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 100010 100 1 MBRF1535CT-1545CT MBRF1550CT-1560CT UF1DLW MBRF1590CT-15150CT TJ=125°C T =125°C J 10 0.1 TJ=25°C 1 0.01 TJ=25°C Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 165 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.3 Typical Reverse Characteristics 10 10 REVERSE VOLTAGE (V) 150 135 8.3ms single half sine wave 120 105 90 75 60 45 30 15 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 (A) AVERAGE FORWARD CURRENT (A) 20 Version: J2105 1.2 MBRF1535CT – MBRF15150CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: J2105 MBRF1535CT – MBRF15150CT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS ITO-220AB MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: J2105 MBRF1535CT – MBRF15150CT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: J2105