TSZU52C2V0 RGG

TSZU52C2V0 – TSZU52C39 Taiwan Semiconductor 150mW, 2V - 39V Zener Diode FEATURES ● ● ● ● ● KEY PARAMETERS Wide zener voltage range selection: 2.0V to 39V Designed for mounting on small surface Extremely thin / leadless package RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● General regulation functions PARAMETER VALUE UNIT PD 150 mW VZ 2.0 - 39 V TJ MAX 125 °C Package 0603 Configuration Single die MECHANICAL DATA ● ● ● ● Case: 0603 Terminal: Gold plated, solderable per MIL-STD-750, method 2026 Polarity: Indicated by cathode band Weight: 3.00mg (approximately) 0603 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Power dissipation PD 150 mW Forward Voltage @ IF = 10mA Surge peak forward current, 8.3ms single half sine-wave superimposed on rated Junction temperature range VF 0.9 V IFSM 2 A TJ -55 to +125 °C Storage temperature range TSTG -55 to +125 °C 1 Version: G2009 TSZU52C2V0 – TSZU52C39 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) ZENER VOLTAGE PART NUMBER MARKING CODE TSZU52C2V0 Z0 1.90 TSZU52C2V2 Z1 TSZU52C2V4 VZ @ IZ V Min Max TEST CURRENT Operating Resistance Rising Operating Resistance LEAKAGE CURRENT IZ mA ZZT@ IZT Ω Max IZT mA ZZT@ IZK Ω Max IZK mA IR@ VR µA Max VR V 2.10 5 100 5 600 1 100 1.0 2.09 2.31 5 100 5 600 1 100 1.0 Z2 2.28 2.52 5 85 5 600 1 100 1.0 TSZU52C2V7 Z3 2.57 2.84 5 83 5 500 1 75 1.0 TSZU52C3V0 Z4 2.85 3.15 5 95 5 500 1 50 1.0 TSZU52C3V3 Z5 3.14 3.47 5 95 5 500 1 25 1.0 TSZU52C3V6 Z6 3.42 3.78 5 95 5 500 1 15 1.0 TSZU52C3V9 Z7 3.71 4.10 5 95 5 500 1 10 1.0 TSZU52C4V3 Z8 4.09 4.52 5 95 5 500 1 5.0 1.0 TSZU52C4V7 Z9 4.47 4.94 5 78 5 500 1 5.0 2.0 TSZU52C5V1 ZA 4.85 5.36 5 60 5 480 1 0.1 0.8 TSZU52C5V6 ZB 5.32 5.88 5 40 5 400 1 0.1 1.0 TSZU52C6V2 ZC 5.89 6.51 5 10 5 200 1 0.1 2.0 TSZU52C6V8 ZE 6.46 7.14 5 8 5 150 1 0.1 3.0 TSZU52C7V5 ZF 7.13 7.88 5 7 5 50 1 0.1 5.0 TSZU52C8V2 ZG 7.79 8.61 5 7 5 50 1 0.1 6.0 TSZU52C9V1 ZH 8.65 9.56 5 10 5 50 1 0.1 7.0 TSZU52C10 ZJ 9.50 10.50 5 15 5 70 1 0.1 7.5 TSZU52C11 ZK 10.45 11.55 5 20 5 70 1 0.1 8.5 TSZU52C12 ZM 11.40 12.60 5 20 5 90 1 0.1 9.0 TSZU52C13 ZN 12.35 13.65 5 25 5 110 1 0.1 10 TSZU52C15 ZP 14.25 15.75 5 30 5 110 1 0.1 11 TSZU52C16 ZQ 15.20 16.80 5 40 5 170 1 0.1 12 TSZU52C18 ZR 17.10 18.90 5 50 5 170 1 0.1 14 TSZU52C20 ZS 19.00 21.00 5 50 5 220 1 0.1 15 TSZU52C22 ZT 20.90 23.10 5 55 5 220 1 0.1 17 TSZU52C24 ZU 22.80 25.20 5 80 5 220 1 0.1 18 TSZU52C27 ZV 25.65 28.35 5 80 5 250 1 0.1 20 TSZU52C30 ZW 28.50 31.50 5 80 5 250 1 0.1 23 TSZU52C33 ZX 31.35 34.65 5 80 5 250 1 0.1 25 TSZU52C36 ZY 34.20 37.80 5 90 5 250 1 0.1 27 TSZU52C39 ZZ 37.05 40.95 5 90 5 300 1 0.1 29 ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING TSZU52Cx RGG 0603 4K / 7" Reel Notes: 1. "x" defines voltage from 2.0V(TSZU52C2V0) to 39V(TSZU52C39) 2 Version: G2009 TSZU52C2V0 – TSZU52C39 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Temperature Coefficients Fig.2 Temperature Coefficients TEMPERATURE COEFFICIENT (MV/°C) 7 100 TEMPERATURE COEFFICIENT (MV/°C) 6 5 4 3 2 1 0 -1 -2 -3 -4 1 2 3 4 5 6 7 8 9 10 11 12 10 20 40 50 ZENER VOLTAGE (V) Fig.3 Effect of Zener Voltage on Zener Impedance Fig.4 Typical Forward Voltage 1000 FORWARD CURRENT (mA) IZ(AC)0.1 IZ(DC) f =1kHZ IZ=1mA 100 IZ=5mA 10 IZ=20mA 1 100 TJ=125°C TJ=75°C 10 TJ=25°C 1 1 10 100 0.4 0.5 0.6 ZENER VOLTAGE (V) 400 10 350 CAPACITANCE (pF) 1 TJ=125°C 0.01 TJ=25°C 0.001 0.0001 0.8 0.9 1 1.1 Fig.6 Typical Capacitance 100 0.1 0.7 FORWARD VOLTAGE (V) Fig.5 Typical Leakage Current LEAKAGE CURRENT (mA) 30 ZENER VOLTAGE (V) 1000 DYNAMIC IMPEDANCE (OHM) 10 300 0V Bias 1V Bias 250 200 150 100 50 TJ=-55°C 0 0.00001 0 5 10 15 20 25 30 35 40 1 45 10 100 ZENER VOLTAGE (V) ZENER VOLTAGE (V) 3 Version: G2009 TSZU52C2V0 – TSZU52C39 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise not) Fig.7 Steady State Power Derating 0.1 0 0 25 50 75 100 125 TEMPERATURE (°C) Fig.8 Zener Breakdown Characteristics ZENER CURRENT (mA) 11 10 9V1 8V2 7V5 6V8 6V2 5V6 4V7 5V1 4V3 3V6 3V9 2 2V2 2V4 2V7 3 3V3 100 10 1 0.1 0.01 0 1 2 3 4 5 6 7 8 9 10 11 12 VZ - ZENER VOLTAGE (V) Fig.9 Zener Breakdown Characteristics 39 36 33 30 27 24 22 20 18 16 15 13 12 100 ZENER CURRENT (mA) POWER DISSIPATION (W) 0.2 10 1 0.1 0.01 10 100 VZ - ZENER VOLTAGE (V) 4 Version: G2009 TSZU52C2V0 – TSZU52C39 Taiwan Semiconductor PACKAGE OUTLINE DIMENSION 0603 SUGGESTED PAD LAYOUT 5 Version: G2009 TSZU52C2V0 – TSZU52C39 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: G2009