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MBRS10H100CT MNG

MBRS10H100CT MNG

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    TO263

  • 描述:

    DIODE ARRAY SCHOTTKY 100V TO263

  • 数据手册
  • 价格&库存
MBRS10H100CT MNG 数据手册
MBRS10H100CT – MBRS10H200CT Taiwan Semiconductor 10A, 100V - 200V Schottky Barrier Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Low power loss, high efficiency Ideal for automated placement Guard ring for overvoltage protection High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 10 A VRRM 100 - 200 V IFSM 120 A TJ MAX 175 APPLICATIONS °C 2 Package TO-263AB (D PAK) Configuration Dual dies ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters MECHANICAL DATA ● ● ● ● ● ● 2 Case: TO-263AB (D PAK) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.40g (approximately) 2 TO-263AB (D PAK) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Repetitive peak reverse voltage VRRM MBRS 10H100CT MBRS 10H100CT 100 Reverse voltage, total rms value VR(RMS) 70 PARAMETER SYMBOL Marking code on the device MBRS 10H150CT MBRS 10H150CT 150 105 MBRS UNIT 10H200CT MBRS 10H200CT 200 V 140 V Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Peak repetitive forward current (Rated VR, Square wave, 20KHz) (1) Peak repetitive reverse surge current IF 10 A IFSM 120 A IFRM 10 A IRRM Critical rate of rise of off-state voltage dv/dt 10,000 V/µs Junction temperature TJ -55 to +175 °C Storage temperature TSTG -55 to +175 °C 1 0.5 A Notes: 1. tp = 2.0μs, 1.0KHz 1 Version: J2103 MBRS10H100CT – MBRS10H200CT Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 3.5 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per (1) diode CONDITIONS MBRS10H100CT MBRS10H150CT MBRS10H200CT MBRS10H100CT MBRS10H150CT MBRS10H200CT MBRS10H100CT MBRS10H150CT MBRS10H200CT MBRS10H100CT MBRS10H150CT MBRS10H200CT Reverse current @ rated VR per diode (2) SYMBOL TYP MAX UNIT - 0.85 V - 0.88 V - 0.95 V - 0.97 V IF = 5A, TJ = 125°C - 0.75 V IF = 10A, TJ = 125°C - 0.85 V - 5 µA - 1 mA IF = 5A, TJ = 25°C IF = 10A, TJ = 25°C VF TJ = 25°C IR TJ = 125°C Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) MBRS10HxCT PACKAGE 2 TO-263AB (D PAK) PACKING 800 / Tape & Reel Notes: 1. “x” defines voltage from 100V(MBRS10H100CT) to 200V(MBRS10H200CT) 2 Version: J2103 MBRS10H100CT – MBRS10H200CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 CAPACITANCE (pF) 10 5 0 1000 100 f=1.0MHz Vsig=50mVp-p 10 25 50 75 100 125 150 175 0.1 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C 0.1 TJ=75°C 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 100 10 10 1 UF1DLW TJ=125°C TJ=125°C 0.1 TJ=25°C TJ=25°C 1 0.01 0.1 0.001 0.6 Pulse width 300μs 1% duty cycle Pulse width 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.7 0.4 0.5 0.8 0.6 0.9 0.7 0.8 1.0 0.9 1.1 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 140 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 10 0.01 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 1 10 (A) AVERAGE FORWARD CURRENT (A) 15 120 8.3ms single half sine wave 100 80 60 40 20 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: J2103 1.2 MBRS10H100CT – MBRS10H200CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 4 Version: J2103 MBRS10H100CT – MBRS10H200CT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS 2 TO-263AB (D PAK) SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: J2103 MBRS10H100CT – MBRS10H200CT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: J2103
MBRS10H100CT MNG 价格&库存

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