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MBR20H100CT C0G

MBR20H100CT C0G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    TO-220-3

  • 描述:

    DIODE ARRAY SCHOTTKY 100V TO220

  • 数据手册
  • 价格&库存
MBR20H100CT C0G 数据手册
MBR20H100CT – MBR20H200CT Taiwan Semiconductor 20A, 100V - 200V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 20 A VRRM 100 - 200 V IFSM 150 A TJ MAX 175 °C APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters Package TO-220AB Configuration Dual dies MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.80g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Repetitive peak reverse voltage VRRM MBR 20H100CT MBR 20H100CT 100 Reverse voltage, total rms value VR(RMS) 70 PARAMETER SYMBOL Marking code on the device Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load (1) Peak repetitive reverse surge current Peak repetitive forward current (Rated VR, Square wave, 20KHz) Critical rate of rise of off-state voltage MBR 20H150CT MBR 20H150CT 150 105 MBR UNIT 20H200CT MBR 20H200CT 200 V 140 V IF 20 A IFSM 150 A IRRM 1.0 0.5 A IFRM 20 A dv/dt 10,000 V/μs Junction temperature TJ -55 to +175 °C Storage temperature TSTG -55 to +175 °C Notes: 1. tp = 2.0μs, 1.0KHz 1 Version: I2104 MBR20H100CT – MBR20H200CT Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 1.5 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per (1) diode CONDITIONS MBR20H100CT MBR20H150CT MBR20H200CT MBR20H100CT MBR20H150CT MBR20H200CT MBR20H100CT MBR20H150CT MBR20H200CT MBR20H100CT MBR20H150CT MBR20H200CT Reverse current @ rated VR per diode (2) SYMBOL TYP MAX UNIT - 0.85 V - 0.88 V - 0.95 V - 0.97 V IF = 10A, TJ = 125°C - 0.75 V IF = 20A, TJ = 125°C - 0.85 V - 5 µA - 2 mA IF = 10A, TJ = 25°C IF = 20A, TJ = 25°C VF TJ = 25°C TJ = 125°C IR Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBR20HxCT TO-220AB 50 / Tube MBR20HxCTH TO-220AB 50 / Tube Notes: 1. “x” defines voltage from 100V(MBR20H100CT) to 200V(MBR20H200CT) 2. “H” means AEC-Q101 qualified 2 Version: I2104 MBR20H100CT – MBR20H200CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 20 CAPACITANCE (pF) 15 10 1000 100 5 f=1.0MHz Vsig=50mVp-p 10 0 25 50 75 100 125 150 175 0.1 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C 0.1 TJ=75°C 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 100 10 10 UF1DLW 1 TJ=125°C TJ=125°C TJ=25°C 0.1 TJ=25°C 1 0.01 0.1 0.001 0.1 Pulse width 300μs 1% duty cycle Pulse width 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.3 0.4 0.5 0.5 0.6 0.7 0.7 0.8 0.9 0.9 1.1 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 180 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 10 0.01 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 1 10 (A) AVERAGE FORWARD CURRENT (A) 25 150 8.3ms single half sine wave 120 90 60 30 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: I2104 1.2 MBR20H100CT – MBR20H200CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 100 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 4 Version: I2104 MBR20H100CT – MBR20H200CT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-220AB MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: I2104 MBR20H100CT – MBR20H200CT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: I2104
MBR20H100CT C0G 价格&库存

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