MBR40200PTHC0G

MBR4035PT – MBR40200PT Taiwan Semiconductor 40A, 35V - 200V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability UL Recognized File # E-326243 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● ● PARAMETER VALUE UNIT IF 40 A VRRM 35 - 200 V IFSM 330 A TJ MAX 150 °C Package TO-247AD (TO-3P) Configuration Dual dies Switching mode power supply (SMPS) Adapters Monitor DC to DC converters TV MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-247AD (TO-3P) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Mounting torque: 1.13 N⋅m maximum Polarity: As marked Weight: 6.10g (approximately) TO-247AD (TO-3P) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current 8.3ms single half sine wave superimposed on rated load Peak repetitive reverse surge (1) current Peak repetitive forward current (Rated VR, Square wave, 20KHz) Notes: 1. tp = 2.0μs, 1.0KHz MBR SYMBOL 4035 PT MBR 4035 PT MBR 4045 PT MBR 4045 PT MBR 4050 PT MBR 4050 PT MBR 4060 PT MBR 4060 PT MBR MBR MBR MBR 4090 40100 40150 40200 UNIT PT PT PT PT MBR MBR MBR MBR 4090 40100 40150 40200 PT PT PT PT VRRM 35 45 50 60 90 100 150 200 V VR(RMS) 24 31 35 42 63 70 105 140 V IF 40 A IFSM 330 A IRRM 2 1 IFRM 40 1 A A Version: I2103 MBR4035PT – MBR40200PT Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) MBR MBR MBR MBR MBR MBR MBR MBR SYMBOL 4035 4045 4050 4060 4090 40100 40150 40200 UNIT PT PT PT PT PT PT PT PT PARAMETER Critical rate of rise of off-state voltage Junction temperature Storage temperature dV/dt 10,000 V/μs TJ -55 to +150 °C TSTG -55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 1.2 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS MBR4035PT MBR4045PT MBR4050PT MBR4060PT MBR4090PT IF = 20A, TJ = 25°C MBR40100PT SYMBOL MBR40150PT MBR40200PT MBR4035PT MBR4045PT MBR4050PT MBR4060PT MBR4090PT IF = 40A, TJ = 25°C MBR40100PT MBR40150PT MBR40200PT Forward voltage per diode (1) MBR4035PT MBR4045PT MBR4050PT MBR4060PT MBR4090PT IF = 20A, TJ = 125°C MBR40100PT MBR40150PT MBR40200PT MBR4035PT MBR4045PT MBR4050PT MBR4060PT MBR4090PT IF = 40A, TJ = 125°C MBR40100PT MBR40150PT MBR40200PT TYP MAX UNIT - 0.75 V - 0.77 V - 0.84 V - 0.90 V - 0.80 V - - V - - V - 1.01 V - 0.65 V - 0.67 V - 0.74 V - 0.80 V - 0.75 V - - V - - V - - V VF Notes: 1. Pulse test with PW = 0.3ms 2 Version: I2103 MBR4035PT – MBR40200PT Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Reverse current @ rated VR (2) per diode CONDITIONS MBR4035PT MBR4045PT MBR4050PT MBR4060PT TJ = 25°C MBR4090PT MBR40100PT MBR40150PT MBR40200PT MBR4035PT MBR4045PT MBR4050PT MBR4060PT TJ = 125°C MBR4090PT MBR40100PT MBR40150PT MBR40200PT SYMBOL TYP MAX UNIT - 1000 µA - 500 µA - 100 µA - 30 mA - 20 mA - 10 mA IR Notes: 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBR40xPT TO-247AD (TO-3P) 30 / Tube MBR40xPTH TO-247AD (TO-3P) 30 / Tube Notes: 1. “x” defines voltage from 35V(MBR4035PT) to 200V(MBR40200PT) 2. “H” means AEC-Q101 qualified 3 Version: I2103 MBR4035PT – MBR40200PT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 4035PT - 4045PT 4050PT - 4060PT 4090PT - 40200PT 40 35 CAPACITANCE (pF) 30 25 20 15 1000 10 f=1.0MHz Vsig=50mVp-p 5 100 0 25 50 75 100 125 0.1 150 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) 4035PT - 4045PT 4050PT - 40200PT TJ=125°C TJ=75°C 1 0.1 TJ=25°C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 100010 100 1 4035PT - 4045PT 4050PT - 4060PT 4090PT - 40200PT UF1DLW TJ=125°C TJ=125°C 10 0.1 TJ=25°C 1 0.01 TJ=25°C 0.1 0.001 0.0 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Pulse width 300μs 1% duty cycle Pulse width 0.2 0.4 0.4 0.5 0.6 0.8 0.6 0.7 0.8 1.0 0.9 1.2 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 360 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 1000 10 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 100 10 330 8.3ms single half sine wave 300 270 240 210 180 150 120 90 60 30 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 (A) AVERAGE FORWARD CURRENT (A) 45 Version: I2103 1.2 MBR4035PT – MBR40200PT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: I2103 MBR4035PT – MBR40200PT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-247AD (TO-3P) MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: I2103 MBR4035PT – MBR40200PT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: I2103