MBRF20100CTHC0G

MBRF2035CT – MBRF20200CT Taiwan Semiconductor 20A, 35V - 200V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability UL Recognized File # E-326243 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 20 A VRRM 35 - 200 V IFSM 150 A TJ MAX 150 °C Package ITO-220AB Configuration Dual dies ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters MECHANICAL DATA ● ● ● ● ● ● ● Case: ITO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.70g (approximately) ITO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF PARAMETER SYMBOL 2035 2045 2050 2060 2080 2090 20100 20150 20200 UNIT CT CT CT CT CT CT CT CT CT MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF 2035 2045 2050 2060 2080 2090 20100 20150 20200 CT CT CT CT CT CT CT CT CT Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Peak repetitive reverse surge (1) current VRRM 35 45 50 60 80 90 100 150 200 V VR(RMS) 24 31 35 42 56 63 70 105 140 V IF 20 A IFSM 150 A IRRM 1.0 0.5 1 A Version: O2105 MBRF2035CT – MBRF20200CT Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF PARAMETER SYMBOL 2035 2045 2050 2060 2080 2090 20100 20150 20200 UNIT CT CT CT CT CT CT CT CT CT Peak repetitive forward current IFRM (Rated VR, Square wave, 20KHz) Critical rate of rise dv/dt of off-state voltage Junction TJ temperature Storage TSTG temperature Notes: 1. tp = 2.0μs, 1.0KHz 20 A 10,000 V/µs -55 to +150 °C -55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL MBRF2035CT-2060CT Junction-to-case thermal resistance MBRF2080CT-20200CT RӨJC TYP UNIT 1.5 °C/W 3.5 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT - 0.80 V - 0.85 V - 0.95 V - 0.84 V - 0.95 V - 1.00 - 0.95 V - 1.05 V MBRF2035CT MBRF2045CT MBRF2050CT MBRF2060CT MBRF2080CT IF = 10A,TJ = 25°C MBRF2090CT MBRF20100CT MBRF20150CT Forward voltage per diode (1) MBRF20200CT VF MBRF2035CT MBRF2045CT MBRF2050CT MBRF2060CT MBRF2080CT IF = 20A,TJ = 25°C MBRF2090CT MBRF20100CT MBRF20150CT MBRF20200CT 2 Version: O2105 MBRF2035CT – MBRF20200CT Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MBRF2035CT MBRF2045CT MBRF2050CT MBRF2060CT MBRF2080CT IF = 10A,TJ = 125°C MBRF2090CT MBRF20100CT MBRF20150CT Forward voltage per diode (1) MBRF20200CT TYP MAX UNIT - 0.57 V - 0.70 V - 0.65 V - 0.75 V - 0.85 V - 0.72 V - 0.85 V - 0.75 V - 0.85 V - 0.95 V - 100 µA - 15 mA - 10 mA - 30 mA - 5 mA - 2 mA VF MBRF2035CT MBRF2045CT MBRF2050CT MBRF2060CT MBRF2080CT IF = 20A,TJ = 125°C MBRF2090CT MBRF20100CT MBRF20150CT MBRF20200CT MBRF2035CT MBRF2045CT MBRF2050CT MBRF2060CT MBRF2080CT TJ = 25°C MBRF2090CT MBRF20100CT MBRF20150CT Reverse current @ rated VR per diode (2) MBRF20200CT IR MBRF2035CT MBRF2045CT MBRF2050CT MBRF2060CT MBRF2080CT TJ = 125°C MBRF2090CT MBRF20100CT MBRF20150CT MBRF20200CT Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms 3 Version: O2105 MBRF2035CT – MBRF20200CT Taiwan Semiconductor ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBRF20xCT ITO-220AB 50 / Tube MBRF20xCTH ITO-220AB 50 / Tube Notes: 1. “x” defines voltage from 35V(MBRF2035CT) to 200V(MBRF20200CT) 2. “H” means AEC-Q101 qualified 4 Version: O2105 MBRF2035CT – MBRF20200CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 20 CAPACITANCE (pF) 16 12 8 MBRF2035CT-2045CT 1000 MBRF2050CT-20200CT 100 4 f=1.0MHz Vsig=50mVp-p 10 0 25 50 75 100 125 0.1 150 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) MBRF2035CT-2045CT MBRF2050CT-20200CT TJ=125°C 10 TJ=75°C 0.1 TJ=25°C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 100 10 MBRF2035CT-2045CT 1 MBRF2050CT-2080CT UF1DLW 10 TJ=125°C TJ=25°C 0.1 MBRF2090CT-20100CT 1 0.01 MBRF20150CT-20200CT 0.1 0.001 0.2 0.3 0.4 0.4 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Pulse width 300μs Pulse width 1% duty cycle 0.6 0.5 0.60.8 0.7 1.00.8 1.2 0.9 11.4 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 165 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 1000 1 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 100 10 (A) AVERAGE FORWARD CURRENT (A) 24 150 135 8.3ms single half sine wave 120 105 90 75 60 45 30 15 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 5 Version: O2105 1.2 MBRF2035CT – MBRF20200CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 100 10 1 0.01 0.1 1 10 100 PULSE DURATION (s) 6 Version: O2105 MBRF2035CT – MBRF20200CT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS ITO-220AB MARKING DIAGRAM 7 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: O2105 MBRF2035CT – MBRF20200CT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8 Version: O2105