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MBRF20H150CT C0G

MBRF20H150CT C0G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    TO-220-3

  • 描述:

    DIODE ARRAY SCHOTT 150V ITO220AB

  • 详情介绍
  • 数据手册
  • 价格&库存
MBRF20H150CT C0G 数据手册
MBRF20H100CT – MBRF20H200CT Taiwan Semiconductor 20A, 100V - 200V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability UL Recognized File # E-326243 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 20 A VRRM 100 - 200 V IFSM 150 A TJ MAX 175 °C Package ITO-220AB Configuration Dual dies ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters MECHANICAL DATA ● ● ● ● ● ● ● Case: ITO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.70g (approximately) ITO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device MBRF MBRF MBRF 20H100CT 20H150CT 20H200CT MBRF 20H100CT MBRF 20H150CT MBRF 20H200CT UNIT Repetitive peak reverse voltage VRRM 100 150 200 V Reverse voltage, total rms value VR(RMS) 70 105 140 V Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load (1) Peak repetitive reverse surge current Peak repetitive forward current (Rated VR, Square wave, 20KHz) Critical rate of rise of off-state voltage Junction temperature Storage temperature Notes: 1. tp = 2.0μs, 1.0KHz IF 20 A IFSM 150 A IRRM 1.0 0.5 A IFRM 20 A dv/dt 10,000 V/µs TJ TSTG -55 to +175 -55 to +175 °C °C 1 Version: I2105 MBRF20H100CT – MBRF20H200CT Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-case thermal resistance SYMBOL TYP UNIT RӨJC 3.5 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MBRF20H100CT MBRF20H150CT IF = 10A,TJ = 25°C MBRF20H200CT MBRF20H100CT MBRF20H150CT IF = 20A,TJ = 25°C Forward voltage per diode (1) MBRF20H200CT TYP MAX UNIT - 0.85 V - 0.88 V - 0.95 V - 0.97 V - 0.75 V - 0.85 V VF MBRF20H100CT MBRF20H150CT IF = 10A,TJ = 125°C MBRF20H200CT MBRF20H100CT MBRF20H150CT IF = 20A,TJ = 125°C MBRF20H200CT Reverse current @ rated VR per diode (2) TJ = 25°C IR - 5 µA TJ = 125°C IR - 2 mA Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBRF20HxCT ITO-220AB 50 / Tube MBRF20HxCTH ITO-220AB 50 / Tube Notes: 1. “x” defines voltage from 100V(MBRF20H100CT) to 200V(MBRF20H200CT) 2. “H” means AEC-Q101 qualified 2 Version: I2105 MBRF20H100CT – MBRF20H200CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 20 CAPACITANCE (pF) 15 10 100 5 f=1.0MHz Vsig=50mVp-p 10 0 25 50 75 100 125 150 0.1 175 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) 1 TJ=125°C 0.1 TJ=75°C 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 100 Fig.4 Typical Forward Characteristics 10 90 100 100 10 UF1DLW 1 TJ=125°C 10 TJ=125°C TJ=25°C 0.1 TJ=25°C 1 0.01 0.1 0.001 0.1 0.3 0.3 0.4 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Pulse width 300μs Pulse width 1% duty cycle 0.5 0.5 0.60.7 0.7 0.90.8 1.1 0.9 11.3 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 165 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.3 Typical Reverse Characteristics 0.01 10 REVERSE VOLTAGE (V) 150 135 8.3ms single half sine wave 120 105 90 75 60 45 30 15 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 (A) AVERAGE FORWARD CURRENT (A) 25 Version: I2105 1.2 MBRF20H100CT – MBRF20H200CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 4 Version: I2105 MBRF20H100CT – MBRF20H200CT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS ITO-220AB MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: I2105 MBRF20H100CT – MBRF20H200CT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: I2105
MBRF20H150CT C0G
1. 物料型号:MBRF20H100CT至MBRF20H200CT,是20A、100V至200V的肖特基势垒整流器。 2. 器件简介:这些二极管具有低功耗、高效率,带有过压保护的护环,高浪涌电流能力,符合AEC-Q101标准,RoHS兼容,无卤素。 3. 引脚分配:文档中提供了ITO-220AB封装的引脚图,包括阳极、阴极。 4. 参数特性:关键参数包括正向电流(IF)、反向电压(VRRM)、浪涌正向电流(IFSM)、最大结温(TJMAX)等。 5. 功能详解:文档详细描述了二极管的电气规格,如正向电压、反向电流等,并提供了热性能参数,如结到外壳的热阻。 6. 应用信息:适用于开关电源(SMPS)、适配器、DC-DC转换器等。 7. 封装信息:提供了ITO-220AB封装的机械数据,包括尺寸、重量、安装扭矩等。 8. 订购信息:提供了订购代码、封装类型和包装信息。
MBRF20H150CT C0G 价格&库存

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