0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
UF1GLW RVG

UF1GLW RVG

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    SOD123W

  • 描述:

    DIODE GEN PURP 400V 1A SOD123W

  • 数据手册
  • 价格&库存
UF1GLW RVG 数据手册
UF1DLW – UF1JLW Taiwan Semiconductor 1A, 200V - 600V Ultra Fast Surface Mount Rectifier FEATURES ● ● ● ● ● KEY PARAMETERS Ideal for automated placement Ultra fast recovery time for high efficiency Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application PARAMETER VALUE UNIT IF 1 A VRRM 200 - 600 V IFSM 30 A TJ MAX 150 °C Package SOD-123W Configuration Single die MECHANICAL DATA ● ● ● ● ● ● Case: SOD-123W Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.016g (approximately) SOD-123W ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device UF1DLW UF1GLW UF1JLW UDLW UGLW UJLW UNIT Repetitive peak reverse voltage VRRM 200 400 600 V Reverse voltage, total rms value VR(RMS) 140 280 420 V Forward current Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Junction temperature IF 1 A IFSM 30 A TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: C2103 UF1DLW – UF1JLW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 28 °C/W Junction-to-ambient thermal resistance RӨJA 88 °C/W Junction-to-case thermal resistance RӨJC 38 °C/W Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu test board) ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL UF1DLW Forward voltage (1) UF1GLW IF = 1A, TJ = 25°C VF UF1JLW Reverse current @ rated VR TJ = 25°C (2) IR TJ = 125°C UF1DLW Junction capacitance Reverse recovery time UF1GLW UF1JLW UF1DLW UF1GLW UF1JLW 1MHz, VR = 4.0V IF = 0.5A, IR = 1.0A, Irr = 0.25A CJ TYP MAX UNIT - 0.95 V - 1.25 V - 1.50 V - 1 µA - 50 µA 40 - pF 25 - pF 15 - pF - 20 ns - 25 ns trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING UF1xLW SOD-123W 10,000 / Tape & Reel Notes: 1. “x” defines voltage from 200V(UF1DLW) to 600V(UF1JLW) 2 Version: C2103 UF1DLW – UF1JLW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 100 UF1DLW CAPACITANCE (pF) 1.0 0.5 0.0 UF1GLW 10 1 f=1.0MHz Vsig=50mVp-p 0.1 30 60 90 120 150 0 20 40 LEAD TEMPERATURE (°C) UF1DLW TJ=125°C 0.1 TJ=25°C 0.01 30 40 50 60 70 80 80 100 Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) 1 20 60 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 10 UF1JLW 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 1010 UF1DLW 11 UF1DLW TJ=125°C TJ=125°C TJ=25°C 0.1 0.1 TJ=25°C 0.01 0.01 Pulse width 300μs 1% duty cycle Pulse width 0.001 0.001 0.3 0.3 0.4 0.4 0.5 0.6 0.6 0.7 0.7 0.8 0.90.9 1 1 1.1 0.8 FORWARD VOLTAGE (V) 3 (A) AVERAGE FORWARD CURRENT (A) 1.5 Version: C2103 1.2 UF1DLW – UF1JLW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) 1 0.1 TJ=25°C 0.01 20 30 40 50 60 70 80 90 100 UF1GLW UF1DLW 11 TJ=125°C TJ=125°C TJ=25°C 0.1 0.1 TJ=25°C 0.01 0.01 Pulse width 300μs 1% duty cycle Pulse width 0.001 0.001 0.3 0.3 0.4 0.4 0.50.5 0.60.6 0.7 0.70.8 0.80.9 0.91 1.1 1 1.1 1.2 11.7 1.1 1.2 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) Fig.7 Typical Reverse Characteristics Fig.8 Typical Forward Characteristics 10 UF1JLW TJ=125°C 1 0.1 TJ=25°C 0.01 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) (A) TJ=125°C 10 10 10 10 UF1JLW 11 UF1DLW TJ=125°C TJ=125°C TJ=25°C 0.1 0.1 TJ=25°C 0.01 0.01 Pulse width 300μs 1% duty cycle Pulse width 0.001 0.001 0.3 0.3 0.5 0.4 0.7 0.5 0.9 0.6 1.1 0.7 1.3 0.8 1.5 0.9 FORWARD VOLTAGE (V) 4 (A) UF1GLW 10 INSTANTANEOUS REVERSE CURRENT (μA) INSTANTANEOUS FORWARD CURRENT (A) 10 Fig.6 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.5 Typical Reverse Characteristics Version: C2103 UF1DLW – UF1JLW Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS SOD-123W SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code YW = Date Code F = Factory Code Version: C2103 UF1DLW – UF1JLW Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: C2103
UF1GLW RVG 价格&库存

很抱歉,暂时无法提供与“UF1GLW RVG”相匹配的价格&库存,您可以联系我们找货

免费人工找货